IP Library Granted Patent US 11,476,095
Granted Patent B2
US 11,476,095 · App. 17/027,101 · Granted Oct 18, 2022

Electrostatic chuck and plasma processing apparatus

Inventors: Shin Yamaguchi (Kurokawa-gun, JP); Akiyoshi Mitsumori (Kurokawa-gun, JP)
Assignee: TOKYO ELECTRON LIMITED
H01J37/32449C23C16/4586H01J37/3255H01J37/32724H01L21/67109H01L21/6831H01L21/6833H01L21/68757H01L21/68785H02N13/00Y10T279/23
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Quick Facts
Patent No.
US 11,476,095
App. No.
17/027,101
Granted
Oct 18, 2022
Kind
B2
Abstract

An electrostatic chuck of an embodiment includes a base, a dielectric layer, and a chuck main body. The dielectric layer is provided on the base, and is fixed to the base. The chuck main body is mounted on the dielectric layer. The chuck main body has a ceramic main body, a first electrode, a second electrode, and a third electrode. The ceramic main body has a substrate mounting region. The first electrode is provided in the substrate mounting region. The second electrode and the third electrode form a bipolar electrode. The second electrode and the third electrode are provided in the ceramic main body, and are provided between the first electrode and the dielectric layer.

Claims (17)

1. An electrostatic chuck, comprising:

a base;

a dielectric layer provided on the base; and

a ceramic layer mounted on the dielectric layer and having a substrate support surface;

a first electrostatic electrode provided in the ceramic layer; and

a second electrostatic electrode and a third electrostatic electrode forming a bipolar electrode, provided in the ceramic layer, and provided between the first electrode and the dielectric layer.

2. The electrostatic chuck according to claim 1 , wherein the second electrode and the third electrode are film-shaped electrodes and have comb-tooth shapes.

3. The electrostatic chuck according to claim 2 , wherein the second electrode and the third electrode are provided so that comb teeth of the second electrode and comb teeth of the third electrode are alternately arranged along one direction.

4. The electrostatic chuck according to claim 1 , wherein the dielectric layer is a resin layer bonded to the base with an adhesive layer.

5. The electrostatic chuck according to claim 4 , wherein the resin layer is formed of polyimide.

6. A plasma processing apparatus, comprising:

a chamber main body that provides a chamber;

an electrostatic chuck defined in claim 1 , provided in the chamber;

a radio frequency power supply that is electrically connected to the base;

a first DC power supply electrically connected to the first electrode of the electrostatic chuck;

a second DC power supply electrically connected to the second electrode of the electrostatic chuck; and

a third DC power supply electrically connected to the third electrode of the electrostatic chuck.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 21, 2020
From: YAMAGUCHI, SHIN; MITSUMORI, AKIYOSHI
To: TOKYO ELECTRON LIMITED
Reel/Frame 053833/0557 →
Priority Claims (1)
JP 2017-106728 · May 30, 2017 · national
Continuity (2)
Continuation 15987110 · May 23, 2018
Related Publication 20210005432A1 · Jan 7, 2021