Semiconductor device and method of manufacturing semiconductor device
According to one embodiment, a method of manufacturing a semiconductor device includes forming a metal bump on a first surface side of a semiconductor chip, positioning the semiconductor chip so the metal bump contacts a pad of an interconnection substrate, and applying a first light from a second surface side of the semiconductor chip and melting the metal bump with the first light. After the melting, the melted metal bump is allowed to resolidify by stopping or reducing the application of the first light. The semiconductor chip is then pressed toward the interconnection substrate. A second light is then applied from the second surface side of the semiconductor chip while the semiconductor chip is being pressed toward the interconnection substrate to melt the metal bump. After the melting, the melted metal bump is allowed to resolidify by the stopping or reducing of the application of the second light.
1. A semiconductor device, comprising:
a semiconductor chip having a first metal bump in a central region and a second metal bump in an outer peripheral region outside the central region when viewed in a plan view; and
an interconnection substrate having a first pad connected to the first metal bump and a second pad connected to the second metal bump, wherein
a first compound layer comprising a material of the first metal bump and a material of the first pad is between the first metal bump and the first pad,
a second compound layer comprising a material of the second metal bump and a material of the second pad is between the second metal bump and the second pad, and
a thickness of the first compound layer and a thickness of the second compound layer are different from each other.
2. The semiconductor device according to claim 1 , wherein the thickness of the first compound layer is greater than the thickness of the second compound layer.
3. The semiconductor device according to claim 2 , wherein
the semiconductor chip is rectangular in plan view, and
the second metal bump is provided at a corner of the semiconductor chip.
4. The semiconductor device according to claim 1 , wherein
the first compound layer is an alloy containing nickel and tin, and
the second compound layer is an alloy containing nickel and tin.
5. The semiconductor device according to claim 1 , wherein
the first compound layer is an alloy containing copper and tin, and
the second compound layer is an alloy containing copper and tin.