Flows of optimization for patterning processes
A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.
1. A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection comprising an illumination system and projection optics, the method comprising:
obtaining a through exposure window obscuration shape of the projection optics; and
determining an adjusted portion of the patterning device pattern for each of a plurality of exposure window positions of the projection optics at least partially based on varying geometry shape of the obscuration at the plurality of exposure window positions.
2. The method of claim 1 , further comprising determining an illumination mode shape for each of a plurality of exposure window positions of the projection optics at least partially based on the any geometry shape of obscuration.
3. The method of claim 1 , wherein determining the adjusted portion of the patterning device pattern comprises making a change to a main feature and/or an addition or change of an assist feature of the patterning device pattern.
4. The method of claim 1 , wherein the determining further accounts for a topography of a patterning device for which the patterning device pattern is determined.
5. The method of claim 1 , wherein the determining further accounts for a defocus of a patterning device for which the patterning device pattern is determined.
6. The method of claim 1 , wherein the determining further accounts for an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.
7. A computer program product comprising a non-transitory computer readable medium having instructions therein, the instructions, upon execution by a computer system, configured to cause performance of the method of claim 1 .
8. A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection comprising an illumination system and projection optics, the method comprising:
obtaining a through exposure window obscuration shape of the projection optics; and
determining an illumination mode shape for the portion of a given patterning device pattern for each of a plurality of exposure window positions of the projection optics at least partially based on varying geometry shape of the obscuration at the plurality of exposure window positions.
9. The method of claim 8 , wherein the determining further accounts for a topography of a patterning device for which the patterning device pattern is determined.
10. The method of claim 8 , wherein the determining further accounts for a defocus of a patterning device for which the patterning device pattern is determined.
11. The method of claim 8 , wherein the determining further accounts for an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.
12. The method of claim 8 , further comprising configuring the patterning device pattern wherein transmission at all locations of the portion of the patterning device pattern is not restricted to a number of discrete values.
13. The method of claim 8 , wherein the projection optics are reflective projection optics designed to project extreme ultraviolet radiation.
14. A computer program product comprising a non-transitory computer readable medium having instructions therein, the instructions, upon execution by a computer system, configured to cause performance of the method of claim 8 .
15. A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection comprising an illumination system and projection optics, the method comprising:
obtaining a model that models projection of radiation by the projection optics; and
based on the model and by a hardware computer, configuring the portion of the patterning device pattern and/or determining an illumination mode shape for the portion, or configured portion, of the patterning device pattern using a varying geometry shape of an obscuration of the projection optics at a plurality of exposure window positions and taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.
16. The method of claim 15 , wherein the model models an anamorphic demagnification of radiation by the projection optics.
17. The method of claim 15 , wherein the determining further accounts for a topography of a patterning device for which the patterning device pattern is determined.
18. The method of claim 15 , wherein the determining further accounts for a defocus of a patterning device for which the patterning device pattern is determined.
19. The method of claim 15 , wherein the determining further accounts for an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.
20. A computer program product comprising a non-transitory computer readable medium having instructions therein, the instructions, upon execution by a computer system, configured to cause performance of the method of claim 15 .