Memory with programmable die refresh stagger
Memory devices and systems with configurable die refresh stagger, and associated methods, are disclosed herein. In one embodiment, a memory system includes two or more memory dies. At least one memory die includes a fuse array storing refresh information that specifies a refresh group of the memory die. In these and other embodiments, at least one memory die includes a refresh group terminal and refresh group detect circuitry electrically connected to the refresh group terminal. The at least one memory die is configured to detect a refresh group of the memory die and to delay its refresh operation by a time delay corresponding to the refresh group. In this manner, refresh operations of the two or more memory dies can be staggered to reduce peak current demand of the memory system.
1. A memory die, wherein the memory die is configured to:
detect a group to which the memory die belongs based, at least in part, on information stored on the memory die or delivered to the memory die, wherein the information indicates the group to which the memory die belongs, wherein the group is one of a plurality of groups, and wherein the group indicates a time delay by which to delay executing a refresh operation in response to a command to execute the refresh operation; and
after receiving the command, delay executing the refresh operation by the time delay.
2. The memory die of claim 1 , wherein:
the memory die comprises a fuse array;
the information is stored in the fuse array; and
the memory die is configured to detect the group by reading the information from the fuse array.
3. The memory die of claim 1 , wherein the information (a) is not based on the command and (b) is delivered to the memory die in a signal that is separate from the command.
4. The memory die of claim 3 , wherein:
the memory die comprises an external terminal; and
the signal is delivered to the memory die via the external terminal.
5. The memory die of claim 4 , wherein:
the memory die further comprises circuitry electrically connected to the external terminal; and
the circuitry is configured to detect the group based, at least in part, on the information in the signal.
6. The memory die of claim 5 , wherein:
the signal is the external terminal being tied to a first polarity or to a second polarity; and
to detect the group, the circuitry is configured to determine whether the external terminal is connected to the first polarity or the second polarity.
7. The memory die of claim 5 , wherein:
the signal is the external terminal being tied to a first polarity, to a second polarity, or to neither the first polarity nor the second polarity; and
to detect the group, the circuitry is configured to determine whether the external terminal is connected to the first polarity, to the second polarity, or to neither the first polarity nor the second polarity.
8. The memory die of claim 5 , wherein:
the signal is a voltage level supplied to the external terminal; and
to detect the group, the circuitry is configured to determine the voltage level.
9. The memory die of claim 8 , wherein the voltage level supplied to the external terminal is based at least in part on a resistor external the memory die and electrically coupled to the external terminal.
10. A memory device, comprising:
a plurality of memory cells; and
a fuse array storing information indicating a group to which the memory device belongs, wherein the group is one of a plurality of groups, and wherein the group indicates a time delay by which to delay a refresh operation on memory cells of the plurality of memory cells after receiving a command to execute the refresh operation,
wherein the memory device is configured to:
read the information from the fuse array,
detect the group based, at least in part, on the information, and
after receiving the command, delay executing the refresh operation by the time delay.
11. The memory device of claim 10 , wherein the memory device is an individual memory die.
12. The memory device of claim 10 , further comprising a first memory die and a second memory die, and wherein the first memory die includes a subset of the plurality of memory cells and the fuse array.
13. The memory device of claim 12 , wherein:
the group is a first group to which the first memory die of the memory device belongs; and
the first group indicates the time delay by which to delay the refresh operation on memory cells of the subset.
14. The memory device of claim 13 , wherein:
the fuse array is a first fuse array, the information is first information, the time delay is a first time delay, and the subset is a first subset;
the second memory die includes a second subset of the plurality of memory cells and a second fuse array;
the second fuse array stores second information indicating a second group to which the second memory die belongs;
the second group is another of the plurality of groups;
the second group indicates a second time delay by which to delay the refresh operation of memory cells of the second subset after receiving the command to execute the refresh operation; and
the memory device is configured to read the second information from the second fuse array; detect the second group based, at least in part, on the second information; and after receiving the command, delay executing the refresh operation by the second time delay.
15. The memory device of claim 10 , wherein:
the memory device further comprises a first memory die and a second memory die;
the first memory die includes a subset of the plurality of memory cells;
the group is a first group to which the first memory die belongs; and
the memory device is configured to delay executing the refresh operation on the subset by the time delay after receiving the command.
16. A memory device, comprising:
a plurality of memory cells;
an external terminal; and
circuitry electrically connected to the external terminal,
wherein:
the memory device is configured to receive information in a signal delivered to the memory device via the external terminal,
the signal is separate from a command to execute a refresh operation of memory cells of the plurality of memory cells,
the information is not based on the command,
the information indicates a group to which the memory device belongs,
the group is one of a plurality of groups,
the group indicates a time delay by which to delay the refresh operation of the memory cells after receiving the command,
the circuitry is configured to detect the group based, at least in part, on the information, and
after receiving the command, the memory device is configured to delay executing the refresh operation by the time delay.
17. The memory device of claim 16 , wherein the memory device is an individual memory die.
18. The memory device of claim 16 , wherein:
the signal is the external terminal being tied to a first polarity or to a second polarity; and
to detect the group, the circuitry is configured to determine whether the external terminal is connected to the first polarity or the second polarity.
19. The memory device of claim 16 , wherein:
the signal is the external terminal being tied to a first polarity, to a second polarity, or to neither the first polarity nor the second polarity; and
to detect the group, the circuitry is configured to determine whether the external terminal is connected to the first polarity, to the second polarity, or to neither the first polarity nor the second polarity.
20. The memory device of claim 16 , wherein:
the signal is a voltage level supplied to the external terminal; and
to detect the group, the circuitry is configured to determine the voltage level.