Imaging device and electronic apparatus
An imaging device that smoothly transfers electric charges from a photoelectric converter to a transfer destination is provided. This imaging device includes: a semiconductor layer; a photoelectric converter that generates electric charges corresponding to a received light amount; and a transfer section that includes a first trench gate and a second trench gate and transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface to the back surface of the semiconductor layer into the photoelectric converter. The first trench gate has a first length from the front surface to the photoelectric converter, and the second trench gate has a second length from the front surface to the photoelectric converter, the second length being shorter than the first length.
1. An imaging device, comprising:
a semiconductor layer having a front surface and a back surface, the back surface being on an opposite side of the semiconductor layer from the front surface;
a photoelectric converter that is embedded in the semiconductor layer and that generates electric charges corresponding to a received light amount; and
a transfer section that includes a first trench gate and a second trench gate and that transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface toward the back surface of the semiconductor layer and into the photoelectric converter,
wherein the first trench gate has a first length from the front surface to the photoelectric converter,
wherein the second trench gate has a second length from the front surface to the photoelectric converter, the second length being shorter than the first length, and
wherein the transfer destination is an electric charge holding section.
2. An electronic apparatus comprising the imaging device of claim 1 .
3. An imaging device, comprising:
a semiconductor layer having a front surface and a back surface, the back surface being on an opposite side of the semiconductor layer from the front surface;
a photoelectric converter that is embedded in the semiconductor layer and that generates electric charges corresponding to a received light amount; and
a transfer section that includes a first trench gate and a second trench gate and that transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface toward the back surface of the semiconductor layer and into the photoelectric converter,
wherein the first trench gate has a first length from the front surface to the photoelectric converter,
wherein the second trench gate has a second length from the front surface to the photoelectric converter, the second length being shorter than the first length, and
wherein the transfer destination is a power source.
4. An electronic apparatus comprising the imaging device of claim 3 .
5. An imaging device, comprising:
a semiconductor layer having a front surface and a back surface, the back surface being on an opposite side of the semiconductor layer from the front surface;
a photoelectric converter that is embedded in the semiconductor layer and that generates electric charges corresponding to a received light amount; and
a transfer section that includes a first trench gate and a second trench gate and that transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface toward the back surface of the semiconductor layer and into the photoelectric converter,
wherein the first trench gate has a first length from the front surface to the photoelectric converter,
wherein the second trench gate has a second length from the front surface to the photoelectric converter, the second length being shorter than the first length, and
wherein the transfer destination is located between the first trench gate and the second trench gate.
6. An electronic apparatus comprising the imaging device of claim 5 .
7. An imaging device, comprising:
a semiconductor layer having a front surface and a back surface, the back surface being on an opposite side of the semiconductor layer from the front surface;
a photoelectric converter that is embedded in the semiconductor layer and that generates electric charges corresponding to a received light amount; and
a transfer section that includes a first trench gate and a second trench gate and that transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface toward the back surface of the semiconductor layer and into the photoelectric converter,
wherein the first trench gate has a first length from the front surface to the photoelectric converter,
wherein the second trench gate has a second length from the front surface to the photoelectric converter, the second length being shorter than the first length, and
wherein, in a plane parallel to the front surface, a distance between the second trench gate and the transfer destination is shorter than a distance between the first trench gate and the transfer destination.
8. An electronic apparatus comprising the imaging device of claim 7 .
9. An imaging device, comprising:
a semiconductor layer having a front surface and a back surface, the back surface being on an opposite side of the semiconductor layer from the front surface;
a photoelectric converter that is embedded in the semiconductor layer and that generates electric charges corresponding to a received light amount; and
a transfer section that includes a first trench gate and a second trench gate and that transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface toward the back surface of the semiconductor layer and into the photoelectric converter,
wherein the first trench gate has a first length from the front surface to the photoelectric converter,
wherein the second trench gate has a second length from the front surface to the photoelectric converter, the second length being shorter than the first length, and
wherein the transfer section includes a first transistor and a second transistor, the first transistor and the second transistor being configured to be driven independently of each other.
10. The imaging device according to claim 9 , wherein
the first transistor includes the first trench gate, and
the second transistor includes the second trench gate.
11. The imaging device according to claim 9 , wherein
the first transistor includes the first trench gate and the second trench gate, and
the second transistor is located between the first transistor and the transfer destination.
12. The imaging device according to claim 9 , further comprising
a controller that turns the first transistor which is in an on state into an off state and thereafter turns the second transistor which is in the on state into the off state.
13. An electronic apparatus comprising the imaging device of claim 9 .
14. An imaging device, comprising:
a semiconductor layer having a front surface and a back surface, the back surface being on an opposite side of the semiconductor layer from the front surface;
a photoelectric converter that is embedded in the semiconductor layer and that generates electric charges corresponding to a received light amount; and
a transfer section that includes a first trench gate and a second trench gate and that transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface toward the back surface of the semiconductor layer and into the photoelectric converter,
wherein the first trench gate has a first length from the front surface to the photoelectric converter,
wherein the second trench gate has a second length from the front surface to the photoelectric converter, the second length being shorter than the first length,
wherein the transfer section includes one transistor,
wherein the one transistor includes the first trench gate, the second trench gate, and a third trench gate, and
wherein, in a plane parallel to the front surface, a second distance between the second trench gate and the transfer destination is shorter than a first distance between the first trench gate and the transfer destination, and a third distance between the third trench gate and the transfer destination is shorter than the first distance.
15. An electronic apparatus comprising the imaging device of claim 14 .
16. An imaging device, comprising:
a semiconductor layer having a front surface and a back surface, the back surface being on an opposite side of the semiconductor layer from the front surface;
a photoelectric converter that is embedded in the semiconductor layer and that generates electric charges corresponding to a received light amount; and
a transfer section that includes a first trench gate and a second trench gate and that transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface toward the back surface of the semiconductor layer and into the photoelectric converter,
wherein the first trench gate has a first length from the front surface to the photoelectric converter,
wherein the second trench gate has a second length from the front surface to the photoelectric converter, the second length being shorter than the first length,
wherein the transfer section includes one transistor,
wherein the one transistor includes the first trench gate, the second trench gate, and a third trench gate, and
wherein, in a plane parallel to the front surface, a second distance between the second trench gate and the transfer destination is shorter than a first distance between the first trench gate and the transfer destination, and a third distance between the third trench gate and the transfer destination is longer than the second distance.
17. An electronic apparatus comprising the imaging device of claim 16 .
18. An imaging device, comprising:
a semiconductor layer having a front surface and a back surface, the back surface being on an opposite side of the semiconductor layer from the front surface;
a photoelectric converter that is embedded in the semiconductor layer and that generates electric charges corresponding to a received light amount; and
a transfer section that includes a first trench gate and a second trench gate and that transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface toward the back surface of the semiconductor layer and into the photoelectric converter,
wherein the first trench gate has a first length from the front surface to the photoelectric converter,
wherein the second trench gate has a second length from the front surface to the photoelectric converter, the second length being shorter than the first length, and
wherein a maximum diameter of the first trench gate is larger than a maximum diameter of the second trench gate.
19. An electronic apparatus comprising the imaging device of claim 18 .