Vertical transistor having bottom spacers on source/drain regions with different heights along junction region
A method for manufacturing a semiconductor device includes forming a plurality of fins on a semiconductor substrate. In the method, sacrificial spacer layers are formed on the plurality of fins, and portions of the semiconductor substrate located under the sacrificial spacer layers and located at sides of the plurality of fins are removed. Bottom source/drain regions are grown in at least part of an area where the portions of the semiconductor substrate were removed, and sacrificial epitaxial layers are grown on the bottom source/drain regions. The method also includes diffusing dopants from the bottom source/drain regions and the sacrificial epitaxial layers into portions of the semiconductor substrate under the plurality of fins. The sacrificial epitaxial layers are removed, and bottom spacers are formed in at least part of an area where the sacrificial epitaxial layers were removed.
1. A semiconductor device, comprising:
a vertical transistor comprising a source/drain junction region on a semiconductor substrate;
bottom source/drain regions disposed adjacent the source/drain junction region; and
a bottom spacer pattern comprising first bottom spacers disposed on lateral sides of the source/drain junction region, and second bottom spacers disposed on lateral sides of the first bottom spacers;
wherein the first and second bottom spacers are formed on top surfaces of the bottom source/drain regions;
wherein top surfaces of the first bottom spacers have a planar profile, and top surfaces of the second bottom spacers have a concave shape; and
wherein the top surfaces of respective ones of the bottom source/drain regions on the lateral sides of the source/drain junction region are at different heights along the source/drain junction region.
2. The semiconductor device according to claim 1 , further comprising a gate structure disposed on the bottom spacer pattern, wherein the gate structure comprises a dielectric layer and at least one metal layer.
3. The semiconductor device according to claim 2 , wherein a shape of the dielectric layer conforms to shapes of the top surfaces of the first and second bottom spacers.
4. The semiconductor device according to claim 2 , wherein the dielectric layer contacts the top surfaces of the first and second bottom spacers.
5. The semiconductor device according to claim 4 , wherein the dielectric layer further contacts a portion of the source/drain junction region.
6. The semiconductor device according to claim 2 , wherein a shape of the at least one metal layer conforms to shapes of the top surfaces of the first and second bottom spacers.
7. The semiconductor device according to claim 1 , wherein the first bottom spacers are disposed between the source/drain junction region and the second bottom spacers.
8. The semiconductor device according to claim 1 , wherein at least part of the top surfaces of the first bottom spacers are at different heights than at least part of the top surfaces of the second bottom spacers.
9. The semiconductor device according to claim 1 , wherein a width of the first bottom spacers along the top surfaces of the bottom source/drain regions is less than a width of the second bottom spacers along the top surfaces of the bottom source/drain regions.
10. A semiconductor device, comprising:
a vertical channel region comprising a source/drain junction region at a bottom portion of the vertical channel region;
bottom source/drain regions disposed adjacent the source/drain junction region; and
a bottom spacer pattern comprising first bottom spacers disposed on sides of the source/drain junction region, and second bottom spacers disposed on sides of the first bottom spacers;
wherein the first and second bottom spacers are formed on top surfaces of the bottom source/drain regions;
wherein top surfaces of the first bottom spacers have a planar profile, and a portion of top surfaces of the second bottom spacers have a concave shape; and
wherein the top surfaces of respective ones of the bottom source/drain regions on the sides of the source/drain junction region are at different heights along the source/drain junction region.
11. The semiconductor device according to claim 10 , further comprising a gate structure disposed on the bottom spacer pattern, wherein the gate structure comprises a dielectric layer and at least one metal layer.
12. The semiconductor device according to claim 11 , wherein a shape of the dielectric layer conforms to shapes of the top surfaces of the first and second bottom spacers.
13. The semiconductor device according to claim 11 , wherein the dielectric layer contacts the top surfaces of the first and second bottom spacers.
14. The semiconductor device according to claim 13 , wherein the dielectric layer further contacts a portion of the source/drain junction region.
15. The semiconductor device according to claim 11 , wherein a shape of the at least one metal layer conforms to shapes of the top surfaces of the first and second bottom spacers.
16. The semiconductor device according to claim 10 , wherein the first bottom spacers are disposed between the source/drain junction region and the second bottom spacers.
17. The semiconductor device according to claim 10 , wherein at least part of the top surfaces of the first bottom spacers are at different heights than at least part of the top surfaces of the second bottom spacers.
18. The semiconductor device according to claim 10 , wherein a width of the first bottom spacers along the top surfaces of the bottom source/drain regions is less than a width of the second bottom spacers along the top surfaces of the bottom source/drain regions.
19. A semiconductor device, comprising:
a fin comprising a source/drain junction region at a bottom portion of the fin;
bottom source/drain regions disposed adjacent the source/drain junction region; and
a bottom spacer pattern comprising first bottom spacers disposed on sides of the source/drain junction region, and second bottom spacers disposed on sides of the first bottom spacers;
wherein the first and second bottom spacers are formed on top surfaces of the bottom source/drain regions;
wherein top surfaces of the first bottom spacers have a planar profile, and a portion of top surfaces of the second bottom spacers have a concave shape; and
wherein the top surfaces of respective ones of the bottom source/drain regions on the sides of the source/drain junction region are at different heights along the source/drain junction region.
20. The semiconductor device according to claim 19 , wherein the first bottom spacers are disposed between the source/drain junction region and the second bottom spacers.