Integrated rotation-angle sensor unit in a measuring system for rotation angle determination
An integrated rotation-angle sensor unit in a measuring system for rotation angle determination, with a shaft that is rotatable about an axis of rotation with a transmitter, The sensor unit has a semiconductor layer with a top surface that can be arranged perpendicular to the axis of rotation and has a bottom surface, and two monolithic Hall sensor systems are implemented in the semiconductor layer. Each Hall sensor system has at least a first Hall sensor, a second Hall sensor, and a third Hall sensor, and the three Hall sensors of the first Hall sensor system are arranged on a first circle that is parallel to the top surface of the semiconductor layer and can be arranged concentrically around the axis of rotation.
1. An integrated rotation-angle sensor unit arranged in a measuring system for rotation angle determination, the integrated rotation-angle sensor unit comprising:
a shaft that is rotatable about an axis of rotation with a transmitter;
a semiconductor layer with a top surface arranged substantially perpendicular to the axis of rotation and with a bottom surface;
a first Hall sensor system monolithically formed in the semiconductor layer; and
a second Hall sensor system monolithically formed in the semiconductor layer,
wherein each of the first and the second Hall sensor systems comprises at least a first Hall sensor, a second Hall sensor, and a third Hall sensor,
wherein each of the first, second and third Hall sensors of the first Hall sensor system and the first, second and third Hall sensors of the second Hall sensor system are implemented as separate sensors,
wherein the first, second and third Hall sensors of the first Hall sensor system are arranged on a first circle that is substantially parallel to the top surface of the semiconductor layer and arranged concentrically around the axis of rotation, and
wherein the first, second and third Hall sensors of the second Hall sensor system are arranged on a second circle substantially parallel to the top surface of the semiconductor layer and concentric to the first circle.
2. The Integrated rotation-angle sensor unit according to claim 1 , wherein the integrated rotation-angle sensor unit comprises, implemented on the top surface of the semiconductor layer, a magnetoresistive sensor unit with at least two magnetoresistive sensors.
3. The Integrated rotation-angle sensor unit according to claim 2 , wherein the at least two magnetoresistive sensors are arranged next to one another or on top of one another or within one another.
4. The Integrated rotation-angle sensor unit according to claim 2 , wherein the magnetoresistive sensor unit is arranged inside the first circle in a projection substantially perpendicular to the top surface of the semiconductor layer.
5. The Integrated rotation-angle sensor unit according to claim 1 , wherein the first Hall sensors, the second Hall sensors, and the third Hall sensors of the first and second Hall sensor systems each enclose the same offset angle with respect to a common center point of the first and second circles.
6. The Integrated rotation-angle sensor unit according to claim 1 ,
wherein the first, second, and third Hall sensors of the first Hall sensor system each enclose an angle of 120° relative to one another, and
wherein the first, second, and third Hall sensors of the second Hall sensor system each enclose an angle of 120° relative to one another.
7. The Integrated rotation-angle sensor unit according to claim 1 ,
wherein the first Hall sensor of the first Hall sensor system encloses an angle of 90° with the second Hall sensor of the first Hall sensor system, and an angle of 180° with the third Hall sensor of the first Hall sensor system, and
wherein the first Hall sensor of the second Hall sensor system encloses an angle of 90° with the second Hall sensor of the second Hall sensor system, and an angle of 180° with the third Hall sensor of the second Hall sensor system.
8. The Integrated rotation-angle sensor unit according to claim 1 , wherein the first, second, and/or third Hall sensor of the first and second Hall systems is implemented as a Hall plate with at least four terminals.
9. The Integrated rotation-angle sensor unit according to claim 1 , wherein the first and second Hall sensor systems each comprises a fourth Hall sensor, or each comprises a fourth Hall sensor and a fifth Hall sensor, or each comprises a fourth Hall sensor and a fifth Hall sensor and a sixth Hall sensor.
10. The Integrated rotation-angle sensor unit according to claim 1 , wherein the first, second, and/or third Hall sensor of the first and second Hall systems comprises a main extension surface, and the main extension surface is formed parallel to the top surface of the semiconductor layer.
11. The Integrated rotation-angle sensor unit according to claim 10 , wherein a surface area of the main extension surface of the first Hall sensor of the first Hall sensor system is larger than surface areas of the main extension surfaces of the second and third Hall sensors of the first Hall sensor system, and/or wherein a surface area of the main extension surface of the first Hall sensor of the second Hall sensor system is larger than surface areas of the main extension surfaces of the second and third Hall sensors of the second Hall sensor system.
12. The Integrated rotation-angle sensor unit according to claim 1 , wherein the semiconductor layer is a silicon semiconductor layer.
13. The Integrated rotation-angle sensor unit according to claim 1 , wherein the first Hall sensor system and the second Hall sensor system have the comprise a same number of Hall sensors.
14. The Integrated rotation-angle sensor unit according to claim 1 , wherein the same components are measured of the magnetic field produced by the transmitter.
15. The Integrated rotation-angle sensor unit according to claim 1 , wherein the first Hall sensor system comprises a maximum of seven Hall sensors, and/or wherein the second Hall sensor system comprises a maximum of seven Hall sensors.
16. The Integrated rotation-angle sensor unit according to claim 1 , wherein at least one z-component of the magnetic field produced by the transmitter is measured by the first and/or the second Hall sensor system, the z-component being a component of the magnetic field that is perpendicular to the top surface of the semiconductor layer.
17. The Integrated rotation-angle sensor unit according to claim 1 , wherein the first Hall sensor system is redundant to the second Hall sensor system.
18. An integrated rotation-angle sensor unit arranged in a measuring system for rotation angle determination, the integrated rotation-angle sensor unit comprising:
a shaft that is rotatable about an axis of rotation with a transmitter;
a semiconductor layer with a top surface arranged substantially perpendicular to the axis of rotation and with a bottom surface;
a first Hall sensor system monolithically formed in the semiconductor layer; and
a second Hall sensor system monolithically formed in the semiconductor layer,
wherein the first and the second Hall sensor system comprise at least a first Hall sensor, a second Hall sensor, and a third Hall sensor,
wherein the first, second and third Hall sensors of the first Hall sensor system are arranged on a first circle that is substantially parallel to the top surface of the semiconductor layer and arranged concentrically around the axis of rotation,
wherein the first, second and third Hall sensors of the second Hall sensor system are arranged on a second circle substantially parallel to the top surface of the semiconductor layer and concentric to the first circle, and
wherein the first circle and the second circle have a same diameter.