Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system tor forming the material are also disclosed.
1. A cyclic deposition process for forming a metal-containing material, the cyclic deposition process comprising:
providing a first gas-phase precursor from a first gas-phase reactant source vessel in fluid communication with a reaction chamber to the reaction chamber to form a first metal species, the first gas-phase precursor comprising a metal compound having a formula: (adduct) n -M-X a , where each adduct is an adduct forming ligand and can be independently selected to be a bi- or a multidentate adduct forming ligand or mixtures thereof, where M is a first metal comprising a transition metal, where n is from 1 to 4, where X is a halide or other ligand and where a is from 1 to 4; and
providing a second gas-phase reactant comprising a compound having a general formula of R-M-H, wherein R is an organic group and M is a second metal, to react with the first metal species to thereby form the metal-containing material.
2. The cyclic deposition process of claim 1 , wherein the first metal and the second metal are the same.
3. The cyclic deposition process of claim 1 , wherein the first metal is cobalt (Co), copper (Cu), or nickel (Ni).
4. The cyclic deposition process of claim 1 , wherein the second metal is selected from the group consisting of Ge, Ga, In and Sn.
5. The cyclic deposition process of claim 1 , wherein the second metal comprises Ge.
6. The cyclic deposition process of claim 1 , wherein the second metal comprises In.
7. The cyclic deposition process of claim 1 , wherein the second metal comprises Ga.
8. The cyclic deposition process of claim 1 , wherein the compound having a general formula of R-M-H has formula of R (X-n) -M x -H n , wherein X is the formal oxidation state of the metal and n is 1 to 5, and wherein R comprises an alkyl group or other organic group.
9. The cyclic deposition process of claim 1 , wherein R is independently selected from the group consisting of C1-C10 alkyl groups.
10. The cyclic deposition process of claim 1 , wherein R is cyclopentadienyl, amido, alkoxy, amidinato, guanidinato, imido, carboxylato, β-diketonato, β-ketoiminato, malonato, β-diketiminato group with or without additional donor functionalities.
11. The cyclic deposition process of claim 1 , wherein the metal-containing material comprises Co 3 Sn 2 , Ni 3 Sn 2 , Ni 2 Ge, Ni 5 Ge 3 , Ni 19 Ge 12 , or NiGe.
12. The cyclic deposition process of claim 1 , wherein the first metal is selected from the group consisting of Group 8-11 metals.
13. The cyclic deposition process of claim 1 , wherein the first metal is a transition metal and wherein the adduct forming ligands coordinate to the transition metal through at least one of a nitrogen atom, a phosphorous atom, an oxygen atom, or a sulfur atom.
14. The cyclic deposition process of claim 1 , wherein the second gas-phase reactant comprises a tributylmetal hydride.
15. The cyclic deposition process of claim 1 , wherein the first gas-phase reactant comprises a metal halide compound comprising a bidentate nitrogen containing adduct ligand.
16. The cyclic deposition process of claim 15 , wherein the adduct ligand comprises two nitrogen atoms, and wherein each of nitrogen atoms bonded to at least one carbon atom.
17. The cyclic deposition process of claim 1 , wherein the first gas-phase reactant comprises at least one of cobalt chloride (TMEDA) and nickel chloride (TMPDA).
18. The cyclic deposition process of claim 1 , wherein the second gas-phase reactant comprises one or more of TBTH and TBGH.