IP Library Granted Patent US 11,495,170
Granted Patent B2
US 11,495,170 · App. 16/864,702 · Granted Nov 8, 2022

LED display module, manufacturing method for LED display module and display device including LED display module

Inventors: Myunghee Kim (Suwon-si, KR); Jenghun Suh (Suwon-si, KR); Jaephil Shim (Suwon-si, KR); Jihoon Kang (Suwon-si, KR); Jitsuo Ota (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
G09G3/32G09G3/2003H01L33/0075H01L51/502H01L51/5271G09G2300/0452H01L2251/301
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Quick Facts
Patent No.
US 11,495,170
App. No.
16/864,702
Granted
Nov 8, 2022
Kind
B2
Abstract

A display panel including an LED device and a method including: forming a plurality of light emitting diodes (LEDs); and forming a plurality of partition walls that divide light-emitting regions by each of the plurality of LEDs, wherein the forming the plurality of LEDs includes: etching a growth substrate to form a plurality of LEDs and forming a plurality of protrusions and a plurality of depressions on the growth substrate; and forming a reflector layer on a surface of the plurality of protrusions and a surface of the plurality of depressions, and wherein the forming the plurality of partition walls includes removing a part of the growth substrate so that the plurality of partition walls are formed based on the plurality of protrusions, and a space between the plurality of partition walls is formed based on the plurality of depressions.

Claims (61)

1. A display module comprising:

a plurality of light-emitting diodes (LEDs);

a driving substrate;

a driving circuit on an upper portion of the driving substrate and configured to drive the plurality of LEDs;

a plurality of partition walls configured to divide light-emitting regions by each of the plurality of LEDs; and

reflective layers formed on both sides of each of the plurality of partition walls,

wherein each of the plurality of partition walls is formed to have a predetermined height so that wavelengths of light emitted from each of the plurality of LEDs do not overlap each other, and

wherein a width of each of the plurality of partition walls narrows as a height increases toward an upper portion.

2. The display module of claim 1 , wherein:

each of the plurality of partition walls is a part of a plurality of protrusions formed by etching of a growth substrate to form the plurality of LEDs; and

the plurality of protrusions is formed before a plurality of semiconductor layers included in the plurality of LEDs is formed on the growth substrate.

3. The display module of claim 2 , further comprising:

a color conversion layer at a space between the plurality of partition walls,

wherein the space between the plurality of partition walls is formed based on a plurality of depressions formed along with the plurality of protrusions on the growth substrate, and

wherein the color conversion layer comprises a quantum dot (QD) or phosphor.

4. The display module of claim 1 , further comprising:

a plurality of pixels in a matrix form,

wherein the plurality of pixels each comprise a red (R) sub pixel, a green (G) sub pixel, and a blue (B) sub pixel, and

wherein the R-sub pixel, the G-sub pixel, and the B-sub pixel each correspond to one LED device among the plurality of LEDs.

5. The display module of claim 1 , wherein each of the plurality of partition walls comprises silicon.

6. The display module of claim 1 , wherein the reflective layers each comprise at least one of aluminum (Al) and aluminum nitride (AlN).

7. The display module of claim 6 , wherein the reflective layers comprise:

a first reflective layer comprising aluminum;

a second reflective layer on the first reflective layer and comprising aluminum nitride; and

a third reflective layer on the second reflective layer and comprising aluminum.

8. The display module of claim 1 , wherein each of the plurality of LEDs is a micro LED device in a flip-chip type.

9. A method for manufacturing a display module, the method comprising:

forming a plurality of light emitting diodes (LEDs); and

forming a plurality of partition walls that divide light-emitting regions by each of the plurality of LEDs,

wherein the forming the plurality of LEDs comprises:

etching a growth substrate to form a plurality of LEDs and forming a plurality of protrusions and a plurality of depressions on the growth substrate; and

forming a reflector layer on a surface of the plurality of protrusions and a surface of the plurality of depressions, and

wherein the forming the plurality of partition walls comprises removing a part of the growth substrate so that the plurality of partition walls are formed based on the plurality of protrusions, and a space between the plurality of partition walls is formed based on the plurality of depressions.

10. The method of claim 9 , wherein the forming the plurality of LEDs further comprises:

growing an n-type semiconductor layer on the reflector layer formed on a top surface of the plurality of protrusions in a horizontal direction;

re-growing the n-type semiconductor layer grown in the horizontal direction;

forming a light-emitting layer and a p-type semiconductor layer on the regrown n-type semiconductor layer;

forming a region for dividing each of the plurality of LEDs and a region for disposing an n-type electrode by etching the n-type semiconductor layer, the light-emitting layer, and the p-type semiconductor layer; and

forming the n-type electrode electrically connected to the n-type semiconductor layer on a region to dispose the n-type electrode, and forming, on the p-type semiconductor, a p-type electrode electrically connected to the p-type semiconductor.

11. The method of claim 9 , wherein each of the plurality of partition walls are formed to have a predetermined height so that wavelengths of light emitted from each of the plurality of LEDs do not overlap each other.

12. The method of claim 9 , wherein a width of each of the plurality of partition walls narrows as a height approaches toward an upper portion.

13. The method of claim 9 , wherein each of the plurality of partition walls comprises silicon.

14. The method of claim 9 , wherein the reflector layer comprises at least one of aluminum (Al) and aluminum nitride (AlN).

15. The method of claim 9 , further comprising:

forming a color conversion layer at a space between the plurality of partition walls,

wherein the color conversion layer comprises a quantum dot (QD) or phosphor.

16. A display device comprising:

a plurality of display modules; and

a support plate configured to support the plurality of display modules,

wherein each of the plurality of display modules comprises:

a plurality of light-emitting diodes (LEDs);

a driving substrate;

a driving circuit on an upper portion of the driving substrate and configured to drive the plurality of LEDs;

a plurality of partition walls configured to divide light-emitting regions by each of the plurality of LEDs; and

reflective layers formed on both sides of each of the plurality of partition walls,

wherein each of the plurality of partition walls is a part of a plurality of protrusions formed by etching of a growth substrate to form the plurality of LEDs, and

wherein the plurality of protrusions is formed before a plurality of semiconductor layers included in the plurality of LEDs is formed on the growth substrate.

17. The display device of claim 16 , wherein:

the display module further comprises a plurality of pixels in a matrix form,

the plurality of pixels each comprise a red (R) sub pixel, a green (G) sub pixel, and a blue (B) sub pixel, and

the R-sub pixel, the G-sub pixel, and the B-sub pixel each correspond to one LED device among the plurality of LEDs.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 1, 2020
From: KIM, MYUNGHEE; SUH, JENGHUN; SHIM, JAEPHIL; KANG, JIHOON; OTA, JITSUO
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 052550/0750 →
Priority Claims (1)
KR 10-2019-0052554 · May 3, 2019 · national
Continuity (1)
Related Publication 20200349882A1 · Nov 5, 2020