Structure and formation method of semiconductor device with stacked conductive structures
A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a first conductive structure over the semiconductor substrate. The semiconductor device structure also includes a first dielectric layer surrounding the first conductive structure and a second dielectric layer over the first dielectric layer. The semiconductor device structure further includes a second conductive structure partially surrounded by the second dielectric layer and partially surrounded by the first conductive structure. In addition, the semiconductor device structure includes an interfacial layer separating the first conductive structure from the second conductive structure.
1. A semiconductor device structure, comprising:
a semiconductor substrate;
a first conductive structure over the semiconductor substrate;
a first dielectric layer surrounding the first conductive structure;
a second dielectric layer over the first dielectric layer;
a second conductive structure having a first portion and a second portion, wherein the second conductive structure is in direct contact with the first dielectric layer, the first portion penetrates through the second dielectric layer, and the second portion extends into the first conductive structure, a top of the second portion of the second conductive structure is wider than a bottom of the first portion of the second conductive structure; and
an interfacial layer between the first conductive structure and the second conductive structure.
2. The semiconductor device structure as claimed in claim 1 , wherein the second conductive structure is in direct contact with the interfacial layer and the second dielectric layer.
3. The semiconductor device structure as claimed in claim 1 , wherein the first conductive structure, the interfacial layer, and the second conductive structure are made of different conductive materials.
4. The semiconductor device structure as claimed in claim 3 , wherein the first conductive structure comprises Co, Ru, W, Mo, Al, or a combination thereof, the second conductive structure comprises Ru, Co, Mo, W, Al, or a combination thereof, and the interfacial layer comprises W, Ti, Ta, Ru, Co, Mo, Al, or a combination thereof.
5. The semiconductor device structure as claimed in claim 1 , wherein an upper portion of the interfacial layer is thicker than a lower portion of the interfacial layer.
6. The semiconductor device structure as claimed in claim 1 , wherein the first conductive structure and the second conductive structure are physically separated from each other by the interfacial layer.
7. The semiconductor device structure as claimed in claim 1 , wherein the interfacial layer is in direct contact with the first dielectric layer.
8. A semiconductor device structure, comprising:
a semiconductor substrate;
a first conductive structure over the semiconductor substrate;
a first dielectric layer surrounding the first conductive structure;
a second dielectric layer over the first dielectric layer;
a second conductive structure partially surrounded by the second dielectric layer and partially surrounded by the first conductive structure, wherein the second conductive structure is in direct contact with the first dielectric layer, the second conductive structure comprises a first portion being surrounded by the second dielectric layer and a second portion being partially surrounded by the first conductive structure and in direct contact with the first dielectric layer, a top of the second portion of the second conductive structure is wider than a bottom of the first portion of the second conductive structure; and
an interfacial layer separating the first conductive structure from the second conductive structure.
9. The semiconductor device structure as claimed in claim 8 , wherein the second conductive structure is in direct contact with the second dielectric layer and the interfacial layer.
10. The semiconductor device structure as claimed in claim 8 , wherein the first conductive structure, the interfacial layer, and the second conductive structure are made of different conductive materials.
11. The semiconductor device structure as claimed in claim 8 , wherein an upper portion of the interfacial layer is thicker than a lower portion of the interfacial layer.
12. The semiconductor device structure as claimed in claim 8 , wherein the interfacial layer is not in direct contact with the second dielectric layer.
13. The semiconductor device structure as claimed in claim 8 , further comprising an etch stop layer between the first dielectric layer and the second dielectric layer, wherein the first conductive structure is separated from the second dielectric layer by the etch stop layer.
14. The semiconductor device structure as claimed in claim 13 , wherein the interfacial layer is not in direct contact with the etch stop layer.
15. The semiconductor device structure as claimed in claim 8 , wherein a topmost surface of the interfacial layer is vertically between a topmost surface of the first conductive structure and the second dielectric layer.
16. A semiconductor device structure, comprising:
a semiconductor substrate;
a first conductive structure over the semiconductor substrate;
a dielectric layer surrounding the first conductive structure;
a second conductive structure over the first conductive structure, wherein the second conductive structure has a first portion and a second portion, the second portion of the second conductive structure extends into the first conductive structure and directly contacts the dielectric layer, and a top of the second portion of the second conductive structure is wider than a bottom of the first portion of the second conductive structure; and
an interfacial layer between the first conductive structure and the second conductive structure, wherein the interfacial layer is in direct contact with the dielectric layer.
17. The semiconductor device structure as claimed in claim 16 , wherein the second portion of the second conductive structure extending into the first conductive structure laterally extends towards an edge of the first conductive structure.
18. The semiconductor device structure as claimed in claim 16 , wherein an upper portion of the interfacial layer and a lower portion of the interfacial layer have different thicknesses.
19. The semiconductor device structure as claimed in claim 16 , wherein the first conductive structure and the second conductive structure are made of different materials.
20. The semiconductor device structure as claimed in claim 16 , wherein a topmost surface of the interfacial layer is vertically between a topmost surface of the dielectric layer and the semiconductor substrate.