Packaging method and joint technology for an electronic device

1. A buffer structure to provide stress relief between two layers of an electronic device, the buffer structure comprising:

a plurality of discrete pillars closely packed together such that there is substantially no air gap between the plurality of conductive pillars, and wherein a height of each pillar is greater than a thickness of said pillar;

wherein said buffer structure is self-supporting and is derived from a shear deformed foam.

2. A buffer structure according to claim 1 , wherein at least some of the pillars are solid pillars; and

optionally wherein at least some of the pillars are electrically and thermally conductive.

3. A buffer structure according to claim 1 , wherein the buffer structure is placed between two layers such that said two layers are distant from one another by the height of each pillar; and

optionally wherein an electrical current flows along the height of at least some of the pillars.

4. A buffer structure according to claim 1 , wherein the pillars are packed together using an adhesive material;

optionally wherein the adhesive material is selected from a group comprising soft glue, resin, rubber, mold, solder material and volatile glue;

optionally further comprising a solder material on both sides of the plurality of pillars;

optionally further comprising an outer frame around the plurality of pillars; and

optionally wherein the space between the pillars is partially or totally filled with resin, mold, soft solder or a hard solder material.

5. A buffer structure according to claim 1 , wherein at least one of:

(i) a fill factor of at least some of the pillars each are approximately 1;

(ii) at least some of the pillars have a round cross-section each having a single diameter;

(iii) at least some of the pillars have a hexagonal cross-section;

(iv) at least some of the pillars have different thicknesses; and

(v) at least some of the pillars are filled with a material selected from resin, solder material.

6. A buffer structure according to claim 1 , wherein the mechanical and/or electrical connection between the pillars in a lateral direction along the thickness of each pillar is less compared to the mechanical and/or electrical connection in a vertical direction along the height of each pillar.

7. A buffer structure according to claim 1 , wherein at least one of:

(i) the flexibility of the buffer structure is determined by the ratio of the height and diameter or thickness of each pillar, optionally wherein the diameter or thickness of each pillar is less than about 2 mm; and

(ii) the elastic modulus of the buffer structure is smaller in a horizontal direction along the width of the buffer structure compared to the elastic modulus in a vertical direction along the height of the buffer structure.

8. A buffer structure according to claim 1 , wherein the shear deformed foam comprises any one of a metallic foam, a ceramic foam, a metalized ceramic foam and a plastic foam;

optionally wherein the shear deformed foam is formed by applying a shear force along a height of the foam which results in a tensile force along a thickness of the foam;

optionally wherein the cells of the shear deformed foam has a substantially ‘kite’ structure;

optionally wherein the shear deformed foam is cut into a plurality of pieces along the height of the foam and each piece forms the buffer structure; and

optionally wherein the shear deformed foam is a heat sink.

9. The buffer structure according to claim 1 , wherein the buffer structure is incorporated into a semiconductor device.

10. The buffer structure of claim 9 , wherein at least one of:

(i) the buffer structure comprises a warped thin ceramic structure dividing the buffer structure into an upper portion and a lower portion; and

(ii) the buffer structure comprises a filled region and an unfilled region directly, and wherein the filled region is configured to act as a heat spreader in the semiconductor device, and wherein the filled region comprises a resin, mold, soft solder or hard solder material filling the space between the pillars of the buffer structure.

11. The buffer structure according to claim 9 , wherein the semiconductor device comprises two pieces of metal or non-metal portions, and wherein buffer structure is placed between the two pieces of metal or non-metal to form an elastic and flexible joint, wherein the buffer structure is configured to use as a diffusion attachment to the metal or non-metal portions, and wherein the diffusion attachment is formed using an electric current activated or assisted diffusion sintering technique.

12. The buffer structure according to claim 9 , wherein the semiconductor device comprises a semiconductor chip, and wherein the buffer structure is placed in contact with the semiconductor chip; and

optionally wherein the semiconductor device further comprises mold or resin or foam or an elastic element or an embedding material to embed the semiconductor device, optionally further comprising an insulating layer,

wherein the insulating layer is in contact with the buffer structure via the mold or resin, and optionally wherein the insulating layer is a specialised layer such as a direct copper bonding (DCB) element.

13. The buffer structure of claim 9 , wherein the buffer structure is configured to use as a spring.

14. A use of a self-supporting buffer structure derived from a shear deformed foam, the buffer structure comprising a plurality of discrete pillars closely packed together such that there is substantially no air gap between the plurality of conductive pillars, and wherein a height of each pillar is greater than a thickness of said pillar, and

wherein the use comprises providing stress relief between two materials having a different thermal expansion coefficient in a sandwiched structure of power semiconductor device.

15. A use according to claim 14 , wherein the use comprises at least one of:

(i) handling thermal and/or electrical and/or mechanical contact between different layers of the sandwiched structure;

(ii) providing an anisotropic material for joining two layers of the sandwiched structure;

(iii) providing a heat spreader between two layers of the sandwiched structure;

(iv) providing a spring mechanism to provide pressure on at least one component of the sandwiched structure;

(v) applying a uniform pressure to the at least one component of the sandwiched structure;

(vi) protecting a ceramic structure from a thermal induced stress when the buffer structure is provided on both sides of the ceramic structure;

and (vii) providing a mechanical match making purpose between two layers of the sandwiched structure.

16. A use according to claim 14 , wherein the sandwiched structure comprises a semiconductor chip, a metal electrode, an insulation layer, a thermal interface material and a heat sink, and wherein the use comprises providing the buffer structure between at least some of the semiconductor chip, the metal electrode, the insulation layer, the thermal interface material and the heat sink; and

optionally wherein solder, sinter, thermal interface material or other additive attach material is applied to form a fillet around each pillar, wherein the dimensions of the fillets are controlled and optionally wherein the fillets bridge the pillars, the use comprising providing the sandwich structure as a joint buffer.

17. A method of manufacturing a buffer structure for providing stress relief between two materials having different thermal expansion coefficient, the method comprising:

forming a plurality of discrete pillars closely packed together such that there is substantially no air gap between the plurality of conductive pillars, and wherein a height of each pillar is greater than a thickness of said pillar;

wherein said buffer structure is self-supporting and is derived from a shear deformed foam.

18. A method according to claim 17 , further comprising packing together the pillars using an adhesive material;

optionally wherein the adhesive material is selected from a group comprising soft glue, resin, rubber, solder material and volatile glue;

optionally further comprising providing a solder material on both sides of the plurality of pillars; and

optionally further comprising providing an outer frame around the plurality of pillars.

19. A method according to claim 17 , further comprising:

providing a plurality of discrete wires;

stacking the plurality of discrete wires such that the wires are substantially aligned with one another; and

cutting the plurality of wires along a cross-section of the wires into a plurality of sections, wherein each section of the plurality of wires forms the buffer structure.

20. A method according to claim 17 , further comprising forming the buffer structure from a foam block having a plurality of pores and a plurality of wire portions surrounding the pores; and

optionally further comprising applying a shear force along a height of the foam block which results in a tensile force so that the cells of the shear deformed foam have a substantially ‘kite’ structure, optionally further comprising applying a compression force to the substantially kite structure to flatten the kite structure, optionally wherein the wire portions of the kite structure are closely packed and aligned with one another, optionally further comprising cutting the kite structure into a plurality of pieces along the height of the kite structure and each piece forms the buffer structure.