Method and system of current sharing among bidirectional double-base bipolar junction transistors

1. A method of operating bidirectional double-base bipolar junction transistors, the method comprising:

conducting current through a first bidirectional double-base bipolar junction transistor (first B-TRAN);

conducting current through a second bidirectional double-base bipolar junction transistor (second B-TRAN), the second B-TRAN coupled in parallel with the first B-TRAN;

measuring a value indicative of temperature of the first B-TRAN, and measuring a value indicative of temperature of the second B-TRAN; and

adjusting a current flow through the first B-TRAN, the adjusting responsive to the value indicative of temperature of the first B-TRAN being different than the value indicative of temperature of the second B-TRAN.

2. The method of claim 1 wherein measuring the value indicative of temperature of the first B-TRAN further comprises measuring current flow through the first B-TRAN.

3. The method of claim 1 wherein measuring the value indicative of temperature of the first B-TRAN further comprises measuring temperature of a bulk region of the first B-TRAN.

4. The method of claim 3 wherein measuring temperature of the bulk region of the first B-TRAN further comprises as least one selected from a group comprising: measuring temperature of a heat sink thermally coupled to the B-TRAN; and measuring temperature of the substrate of the first B-TRAN.

5. The method of claim 1 wherein adjusting the current flow through the first B-TRAN further comprises decreasing current flow.

6. The method of claim 1 wherein adjusting the current flow through the first B-TRAN further comprises decreasing the current flow to match a current flow through the second B-TRAN.

7. The method of claim 1 wherein adjusting the current flow through the first B-TRAN further comprises changing a rate of charge carriers injected into a collector-side base of the first B-TRAN.

8. The method of claim 7 wherein changing a rate of charge carriers injected into the collector-side base further comprises at least on selected from a group comprising: changing a voltage coupled between a collector-emitter of the first B-TRAN and the collector-side base; and changing current flow through a current source coupled between the collector-emitter and the collector-side base.

9. The method of claim 1 wherein adjusting the current flow through the first B-TRAN further comprises changing a rate of charge carriers injected into an emitter-side base of the first B-TRAN.

10. A switch assembly comprising:

a first bidirectional double-base bipolar junction transistor (first B-TRAN) defining an upper base, an upper collector-emitter, a lower base, and a lower collector-emitter;

a second bidirectional double-base bipolar junction transistor (second B-TRAN) defining an upper base, an upper collector-emitter, a lower base, and a lower collector-emitter, the second B-TRAN coupled in parallel with the first B-TRAN;

a controller;

a first means for measuring conduction through the first B-TRAN, the first means for measuring coupled to the controller;

a first means for controlling conduction through the first B-TRAN, the first means for controlling conduction coupled to the controller;

a second means for measuring conduction through the second B-TRAN, the second means for measuring coupled to the controller;

wherein the controller is configured to:

read a value indicative of conduction through the first B-TRAN;

read a value indicative of conduction through the first B-TRAN; and

adjust, by way of the first means for controlling, current flow through the first B-TRAN, the adjustment responsive to the value indicative of conduction of the first B-TRAN being different than the value indicative of conduction through second B-TRAN.

11. The switch assembly of claim 10 further comprising:

a second means for controlling conduction through the second B-TRAN, the second means for controlling coupled to the controller;

wherein the controller is further configured to, simultaneously with the adjustment of current flow through the first B-TRAN, at least one selected from a group comprising: maintain, by way of the second means for controlling, current flow through the second B-TRAN unchanged; and increase, by way of the second means for controlling, current flow through the second B-TRAN.

12. The switch assembly of claim 10 :

wherein the first means for measuring conduction further comprises a temperature sensor associated with the first B-TRAN;

wherein the second means for measuring conduction further comprises a temperature sensor associated with the second B-TRAN;

wherein when the controller adjusts current flow through the first B-TRAN, the controller is further configured to adjust responsive to a value indicative of temperature of associated with the first B-TRAN being higher than a value indicative of temperature associated with the second B-TRAN.

13. The switch assembly of claim 12 wherein the temperature sensor associated with the first B-TRAN further comprises at least one least one selected from a group comprising: the temperature sensor associated with the first B-TRAN coupled to a heat sink thermally coupled to the first B-TRAN; and the temperature sensor associated with the first B-TRAN thermally coupled to a substrate of the first B-TRAN.

14. The switch assembly of claim 12 wherein when the controller adjusts current flow through the first B-TRAN the controller is further configured to at least one selected from a group comprising: decrease the current flow through the first B-TRAN; and decrease the current flow through the first B-TRAN to match a current flow through the second B-TRAN.

15. The switch assembly of claim 10 :

wherein the first means for measuring conduction further comprises a current sensor associated with the first B-TRAN;

wherein the second means for measuring conduction further comprises a current sensor associated with the second B-TRAN;

wherein when the controller adjusts current flow through the first B-TRAN, the controller is further configured to adjust responsive to a value indicative of current flow through the first B-TRAN being higher than a value indicative of current flow through the second B-TRAN.

16. The switch assembly of claim 15 wherein when the controller adjusts current flow through the first B-TRAN the controller is further configured to at least one selected from a group comprising: decrease the current flow through the first B-TRAN; and decrease the current flow through the first B-TRAN to match a current flow through the second B-TRAN.

17. The switch assembly of claim 10 :

wherein the first means for controlling conduction further comprises a means for injecting charge carriers into the upper base of the first B-TRAN;

wherein when the controller adjusts current flow through the first B-TRAN, the controller is further configured to change, by way of the means for injecting charge carriers, a rate of charge carrier injection into the upper base of the first B-TRAN.

18. The switch assembly of claim 17 wherein when the controller changes the rate of charge carrier injection, the controller is further configured to reduce current flow through the first B-TRAN by reducing the rate of charge carrier injection into the upper base of the first B-TRAN.

19. The switch assembly of claim 17 wherein when the controller reduces the rate of charge carrier injection into the upper base of the first B-TRAN, the controller is further configured to at least one selected from a group comprising: decrease the current flow through the first B-TRAN; and decrease the current flow through the first B-TRAN to match a current flow through the second B-TRAN.

20. The switch assembly of claim 17 wherein the means for injecting charge carriers is at least one selected from a group comprising: a voltage source coupled between the upper collector-emitter and the upper base of the first B-TRAN; an adjustable voltage source coupled between the upper collector-emitter and the upper base of the first B-TRAN; a current source coupled between the upper collector-emitter and the upper base of the first B-TRAN; and an adjustable current source coupled between the upper collector-emitter and the upper base of the first B-TRAN.

21. The switch assembly of claim 17 :

wherein the first means for controlling conduction further comprises a means for injecting charge carriers into the upper base of the first B-TRAN and a means for injecting charge carriers into the lower base of the first B-TRAN;

wherein when the controller adjusts the current flow through the first B-TRAN, the controller is further configured to:

maintain a rate of charge carrier injection into the upper base of the first B-TRAN; and simultaneously

decrease a rate of charge carrier injection in to the lower base of the first B-TRAN.

22. The switch assembly of claim 17 :

wherein the first means for controlling conduction further comprises a means for injecting charge carriers into the upper base of the first B-TRAN and a means for draining charge carriers from a bulk region of the first B-TRAN;

wherein when the controller adjusts the current flow through the first B-TRAN, the controller is further configured reduce current flow through the first B-TRAN being configured to:

maintain a rate of charge carrier injection into the upper base of the first B-TRAN; and simultaneously

drain charge carriers from the bulk region of the first B-TRAN.