Semiconductor module and semiconductor device container
View Patent ↗A semiconductor module includes a base plate made of a metal, an insulating frame provided on a peripheral edge portion of the base plate, a lead made of a metal and provided on the frame, and a semiconductor device mounted on the base plate in a space surrounded by the frame, wherein the frame is fixed to the base plate by a bonding material containing silver, the frame has concave portions formed in an inner portion which is a corner portion on a space side and an outer portion which is a corner portion on a side opposite to the inner portion in a surface thereof which faces the base plate, and the concave portions are filled with a coating material.
1. A semiconductor module comprising:
a base made of a metal;
an insulating frame provided on a peripheral edge portion of the base; and
a semiconductor chip mounted on the base in a space surrounded by the frame, wherein
the frame is fixed to the base by a bonding material containing silver,
the frame has concave portions in a surface thereof which faces the base, the concave portions being formed in an inner portion of the frame which is a corner portion on a side of the space or an outer portion of the frame which is a corner portion on a side opposite to the inner portion, and
the concave portions in the outer portion or the inner portion are filled with a protective material.
2. The semiconductor module according to claim 1 , wherein the protective material is a thermoplastic resin.
3. The semiconductor module according to claim 2 , wherein the protective material is a resin which is cured at a temperature of 150° C. or more and 230° C. or less.
4. The semiconductor module according to claim 2 , wherein the protective material is a cycloolefin polymer resin.
5. The semiconductor module according to claim 1 , wherein a dielectric constant of the protective material is 3.4 or more and 4.0 or less.
6. The semiconductor module according to claim 1 , wherein
the semiconductor module further comprises a lead made of metal and provided on the frame, and
the concave portions are formed in only a portion of the inner portion or the outer portion which overlaps the lead in a stacking direction.
7. The semiconductor module according to claim 1 , wherein a depth and a height of each of the concave portions are 0.05 mm or more and 0.5 mm or less.
8. The semiconductor module according to claim 1 , wherein the frame is made of a ceramic.
9. The semiconductor module according to claim 8 , wherein the ceramic is a material including an aluminum oxide.
10. The semiconductor module according to claim 1 , wherein the frame is made of a resin.
11. The semiconductor module according to claim 10 , wherein the resin is a polyimide resin.
12. The semiconductor module according to claim 1 , wherein the semiconductor chip is configured to include a nitride semiconductor.
13. The semiconductor module according to claim 1 , wherein
the semiconductor module further comprises a lead made of metal and provided on the frame,
the frame includes a multilayer substrate including at least two layers,
the lead is a metal wiring provided on one layer of the multilayer substrate, and
the one layer is drawn out of the space.
14. A semiconductor device container comprising:
a base made of a metal; and
an insulating frame provided on a peripheral edge portion of the base, wherein
the frame is fixed to the base by a bonding material containing silver,
the frame surrounds a space,
the frame has concave portions in a surface thereof which faces the base, the concave portions being formed in an inner portion of the frame which is a corner portion on a side of the space or an outer portion of the frame which is a corner portion on a side opposite to the inner portion, and
the concave portions in the outer portion or the inner portion are filled with a protective material.