IP Library › Granted Patent US 11,506,709
Granted Patent B2
US 11,506,709 · App. 16/199,092 · Granted Nov 22, 2022

X-ray filter

Inventors: Mario Pacheco (Tempe, AZ); Deepak Goyal (Phoenix, AZ)
Assignee: Intel Corporation
G01R31/303G01N23/04G01N2223/313G01N2223/611G01N2223/645
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Quick Facts
Patent No.
US 11,506,709
App. No.
16/199,092
Granted
Nov 22, 2022
Kind
B2
Abstract

Embodiments may relate an x-ray filter. The x-ray filter may be configured to be positioned between an x-ray source output and a device under test (DUT) that is to be x-rayed. The x-ray filter may include at least 80% titanium (Ti) by weight. Other embodiments may be described or claimed.

Claims (29)

1. An x-ray filter comprising:

a first side; and

a second side;

wherein the x-ray filter includes at least 80% titanium (Ti), the x-ray filter has a transmission rate from the first side to the second side of less than 0.06 arbitrary units (a.u.) for energies below 15 kiloelectronvolts (KeV), and the x-ray filter has a transmission rate from the first side to the second side of at least 0.2 a.u. for energies greater than 20 KeV.

2. The x-ray filter of claim 1 , wherein a distance between the first side and the second side is between 100 micrometers (“microns”) and 1000 microns.

3. The x-ray filter of claim 1 , wherein a distance between the first side and the second side is greater than 1 millimeter.

4. The x-ray filter of claim 1 , wherein the x-ray filter is coupled to a mount for an electronic memory, and the electronic memory is a Dynamic Random Access Memory (DRAM), a Static Random Access Memory (SRAM), or a High-Bandwidth Memory (HBM).

5. The x-ray filter of claim 1 , wherein a distance between the first side and the second side is a first value at a first portion of the x-ray filter, and wherein the distance between the first side and the second side is a second value at a second portion of the x-ray filter.

6. The x-ray filter of claim 1 , wherein with absorption compensation of the Ti is inversely proportional to a distance between the first side and the second side of the x-ray filter.

7. The x-ray filter of claim 1 , wherein the x-ray filter includes at least 80% Ti by weight.

8. The x-ray filter of claim 7 , wherein the at least 80% Ti is in a first layer of the x-ray filter, and wherein the x-ray filter further includes a second layer physically coupled with the first layer, and wherein the second layer includes zinc (Zn), gold (Au), silver (Ag), lead (Pb), germanium (Ge), boron (B), or indium (In).

9. An x-ray machine comprising:

an x-ray source;

an x-ray filter positioned adjacent to the x-ray source, wherein the x-ray filter includes at least 90% titanium (Ti); and

a mount for an electronic memory that is to be x-rayed, wherein the x-ray filter is between the x-ray source and the mount, and the x-ray filter has a transmission rate from the x-ray source towards the mount of less than 0.06 arbitrary units (a.u.) for energies below 15 kiloelectronvolts (KeV), and the x-ray filter has a transmission rate from the x-ray source towards the mount of at least 0.2 a.u. for energies greater than 20 KeV.

10. The x-ray machine of claim 9 , wherein the electronic memory is a Dynamic Random Access Memory (DRAM).

11. The x-ray machine of claim 9 , wherein the x-ray filter is at least 90% Ti by weight.

12. The x-ray machine of claim 9 , wherein the filter is a first filter and further comprising a second filter positioned adjacent to the first filter, and wherein the second filter includes zinc (Zn), gold (Au), silver (Ag), lead (Pb), germanium (Ge), boron (B), or indium (In).

13. The x-ray machine of claim 12 , wherein the second filter is physically coupled with the first filter.

14. A method of testing a memory for an electronic device, the method comprising:

positioning a memory between an x-ray source and a detector;

positioning a filter between the x-ray source and the memory, wherein the filter has a transmission rate of less than 0.06 arbitrary units (a.u.) for energies between 0 kiloelectronvolts (KeV) and 15 KeV, and the filter has a transmission rate of greater than 0.2 a.u. for energies greater than 20 KeV; and

exposing the memory to x-rays from the x-ray source for an amount of time.

15. The method of claim 14 , further comprising positioning the filter 100 micrometers (“microns”) away from the x-ray source.

16. The method of claim 14 , wherein the filter includes at least 90% titanium (Ti) by weight.

17. The method of claim 14 , wherein the memory is a Dynamic Random Access Memory (DRAM).

18. The method of claim 14 , wherein the amount of time is an hour.

19. The method of claim 14 , wherein positioning the memory between the x-ray source and the detector includes positioning the memory on a stage that is between the x-ray source and the detector.

20. The x-ray filter of claim 1 , wherein the x-ray filter includes at least 90% Ti by weight.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 23, 2018
From: PACHECO, MARIO; GOYAL, DEEPAK
To: INTEL CORPORATION
Reel/Frame 047569/0490 →
Continuity (1)
Related Publication 20200166569A1 · May 28, 2020