Method for manufacturing array substrate, array substrate and display device
The present disclosure provides a method for manufacturing an array substrate, an array substrate, and a display device. By first forming holes in a first thin film transistor, then simultaneously performing hydrogen supplementation on the first thin film transistor and a second thin film transistor, and then forming holes in the second thin film transistor, the first thin film transistor and the second thin film transistor can be repaired and compensated in different degrees by hydrogen supplementation.
1. A method of manufacturing an array substrate, comprising:
forming a plurality of pixel structures on a base substrate;
wherein at least one of the plurality of pixel structures comprises a first thin film transistor having at least one insulating layer, at least one second thin film transistor having at least one insulating layer;
forming holes in the at least one insulating layer of the first thin film transistor without exposing a source electrode and a drain electrode of the first thin film transistor;
wherein an active layer of the first thin film transistor and an active layer of the second thin film transistor are made of a low-temperature polysilicon;
performing hydrogen supplementation on the first thin film transistor and the at least one second thin film transistor in such a manner that a hydrogen ion concentration in the active layer of the first thin film transistor is lower than a hydrogen ion concentration in the active layer of the second thin film transistor; and
forming holes in the at least one insulating layer of the at least one second thin film transistor after performing hydrogen supplementation;
wherein the performing hydrogen supplementation on the first thin film transistor and the at least one second thin film transistor, comprises:
placing the first thin film transistor and the at least one second thin film transistor in a sealed container with a temperature of 440 degrees to 460 degrees, and continuously heating for 28 minutes to 32 minutes, thereby enabling some hydrogen ions in the at least one insulating layer of the first thin film transistor to diffuse into the active layer of the first thin film transistor, and enabling some hydrogen ions in the at least one insulating layer of the at least one second thin film transistor to diffuse into the active layer of the at least one second thin film transistor;
wherein the first thin film transistor is a driving thin film transistor, the at least one second thin film transistor is a switch thin film transistor, and the second thin film transistor is electrically connected to the first thin film transistor.
2. The method according to claim 1 , wherein the at least one second thin film transistor further comprises a gate electrode, a source electrode and a drain electrode, respectively.
3. The method according to claim 2 , wherein the forming holes in the at least one insulating layer of the first thin film transistor, comprises:
aligning a first mask with the base substrate;
patterning the at least one insulating layer of the first thin film transistor by using the first mask, thereby forming a first through hole and a second through hole in the at least one insulating layer of the first thin film transistor.
4. The method according to claim 3 , wherein the forming holes in the at least one insulating layer of the at least one second thin film transistor, comprises:
aligning a second mask with the base substrate;
patterning the at least one insulating layer of the at least one second thin film transistor by using the second mask, thereby forming a third through hole and a fourth through hole in the at least one insulating layer of the at least one second thin film transistor to expose the source electrode and the drain electrode of the at least one second thin film transistor, respectively.
5. The method according to claim 1 , wherein the performing hydrogen supplementation on the first thin film transistor and the at least one second thin film transistor, comprises:
placing the first thin film transistor and the at least one second thin film transistor in the sealed container with a temperature of 450 degrees, and continuously heating for 30 minutes, thereby enabling some hydrogen ions in the at least one insulating layer of the first thin film transistor to diffuse into the active layer of the first thin film transistor, and enabling some hydrogen ions in the at least one insulating layer of the at least one second thin film transistor to diffuse into the active layer of the at least one second thin film transistor.
6. The method according to claim 2 , wherein the at least one insulating layer of the first thin film transistor comprises a gate insulating layer and/or at least one protection layer; the at least one insulating layer of the at least one second thin film transistor includes comprises a gate insulating layer and/or at least one protection layer.