Piezoelectric single crystal silicon carbide microelectromechanical resonators
A resonator has a resonator body and a frame at least partially surrounding the resonator body, the resonator body being coupled to the frame by at least one tether. The resonator body, frame and at least one tether comprise silicon carbide. A plurality of interdigitated electrodes are disposed on the silicon carbide resonator body. The resonator body preferably comprises 6H silicon carbide and preferably has a crystalline c-axis oriented generally parallel to a thickness direction of the resonator body.
1. A resonator comprising:
a resonator body and a frame at least partially surrounds the resonator body, the resonator body being coupled to the frame by at least one tether; the resonator body, frame and at least one tether comprising silicon carbide;
a plurality of interdigitated electrodes disposed on a first major surface the silicon carbide resonator body.
2. The resonator of claim 1 , wherein the resonator body is made of 4H silicon carbide.
3. The resonator of claim 1 , wherein the resonator body is made of 6H silicon carbide.
4. The resonator of claim 1 , wherein the resonator body is made of 3C silicon carbide.
5. The resonator of claim 1 , wherein the resonator body, frame and at least one tether are formed from a unitary body of a single polytype of silicon carbide.
6. The resonator of claim 5 , wherein the resonator body has a thickness in the range 2.5 μm to 4.0 μm.
7. The resonator of claim 1 , wherein further including a planar ground electrode disposed on a second major surface of the silicon carbide resonator body, the second major surface of the silicon carbide resonator being parallel to the first major surface of the silicon carbide resonator body and wherein the silicon carbide resonator body is crystalline and has its crystalline c-axis oriented perpendicular to said planar ground electrode.
8. The resonator of claim 1 , wherein the interdigitated electrodes each comprise first and second arrays of electrically conductive protrusions or fingers.
9. The resonator of claim 8 , wherein the first and second arrays of the electrically conductive protrusions or fingers have a pitch in a range of 10 to 13 μm.
10. The resonator of claim 3 , wherein the 6H silicon carbide of the resonator body has a crystalline c-axis oriented generally parallel to a thickness direction of the resonator body.
11. The resonator of claim 5 , wherein each interdigitated electrode comprises interleaved protrusions or fingers disposed along a length of the resonator body, and wherein the resonator has a resonant frequency f=Nv acoustic /(2L), where N is the total number of interleaved protrusions or fingers, L is the length of the resonator body, and V acoustic is a speed of sound in the resonator body.
12. The resonator of claim 1 , wherein the interleaved electrodes are configured to form an electric field that alternates in polarity along a length of the resonator body, thereby forming strain regions that alternate in polarity along the length of the resonator body.
13. The resonator of claim 1 , wherein the resonator has a frequency-quality factor product in the range 3×10 12 to 6×10 14 .
14. The resonator of claim 1 , wherein the resonator has a quality factor of at least 7400.
15. The resonator of claim 1 , wherein the resonator has a resonant frequency in the range 300 MHz to 3 GHz.
16. A resonator, comprising:
a first silicon carbide layer;
a first electrode disposed on a first surface of the first silicon carbide layer;
a second electrode disposed on a second surface of the first silicon carbide layer;
a tether attached to the first silicon carbide layer; and
a second silicon carbide layer attached to the tether,
wherein the first and second electrodes are configured to form an electric field in the first silicon carbide layer.
17. The resonator of claim 16 , wherein, during operation, the electric field is polarized along a thickness direction of the first silicon carbide layer.
18. The resonator of claim 17 , wherein, during operation, the electric field alternates in polarity along a length of the first silicon carbide layer.
19. The resonator of claim 16 , wherein the first and second silicon carbide layers are made of 4H silicon carbide.
20. The resonator of claim 16 , wherein the first and second silicon carbide layers form a unitary layer of 6H silicon carbide.
21. The resonator of claim 17 , wherein, the first silicon carbide layer has a crystalline c-axis that is generally parallel to a thickness direction of the first silicon carbide layer.
22. The resonator of claim 16 , wherein the first and second silicon carbide layers form a unitary layer of 3C silicon carbide.
23. A resonator, comprising:
a frame;
a silicon carbide resonator plate attached to the frame by tethers;
a first electrode disposed on a first surface of the silicon carbide resonator plate;
a second electrode disposed on a second surface of the silicon carbide resonator plate,
wherein the first and second electrodes are configured to form an electric field in the silicon carbide resonator plate.
24. The resonator of claim 23 , wherein the frame includes a substrate and wherein a silicon carbide layer (i) forms the silicon carbide resonator plate and the tethers and (ii) is also attached to the substrate of the frame.