Sub-miniature microphone
A MEMS transducer includes a transducer substrate, a counter electrode, and a diaphragm. The counter electrode is coupled to the transducer substrate. The diaphragm is oriented substantially parallel to the counter electrode and is spaced apart from the counter electrode to form a gap. A back volume of the MEMS transducer is an enclosed volume positioned between the counter electrode and the diaphragm. A height of the gap between the counter electrode and the diaphragm is less than two times the thermal boundary layer thickness within the back volume at an upper limit of the audio frequency band of the MEMS transducer.
1. A MEMS transducer, comprising:
a transducer substrate;
a counter electrode coupled to the transducer substrate; and
a diaphragm oriented substantially parallel to the counter electrode and spaced apart from the counter electrode to form a gap,
wherein a back volume of the MEMS transducer is an enclosed volume positioned between the counter electrode and the diaphragm, and wherein a height of the gap between the counter electrode and the diaphragm is less than two times the thermal boundary layer thickness within the back volume at an upper limit of the audio frequency band of the MEMS transducer.
2. The MEMS transducer of claim 1 , wherein the counter electrode is embedded within the transducer substrate.
3. The MEMS transducer of claim 1 , wherein the upper limit of the audio frequency band is 20 kHz.
4. The MEMS transducer of claim 1 ,
wherein the diaphragm is oriented substantially parallel to the counter electrode in the presence of a bias voltage between the counter electrode and the diaphragm, and
wherein the diaphragm is not parallel to the counter electrode in the absence of a bias voltage between the counter electrode and the diaphragm.
5. A MEMS device, comprising:
an integrated circuit; and
a MEMS transducer formed on the integrated circuit, wherein the MEMS transducer comprises:
a counter electrode;
a diaphragm oriented substantially parallel to the counter electrode and spaced apart from the counter electrode to form a gap,
wherein a back volume of the MEMS transducer is an enclosed volume between the counter electrode and the diaphragm, and wherein a height of the gap between the counter electrode and the diaphragm is less than two times the thermal boundary layer thickness within the back volume at an upper limit of the audio frequency band of the MEMS transducer.
6. The MEMS device of claim 5 , wherein the counter electrode formed onto an upper surface of the integrated circuit.
7. The MEMS device of claim 5 , wherein the counter electrode is connected to the integrated circuit by metal layers embedded within the integrated circuit.
8. The MEMS device of claim 5 , wherein the upper limit of the audio frequency band is 20 kHz.
9. The MEMS device of claim 5 ,
wherein the diaphragm is oriented substantially parallel to the counter electrode in the presence of a bias voltage between the counter electrode and the diaphragm, and
wherein the diaphragm is not parallel to the counter electrode in the absence of a bias voltage between the counter electrode and the diaphragm.
10. a MEMS transducer, comprising:
a transducer substrate;
a counter electrode coupled to the transducer substrate; and
a diaphragm oriented substantially parallel to the counter electrode and spaced apart from the counter electrode,
wherein a back volume of the MEMS transducer is an enclosed volume between the diaphragm and the transducer substrate, and
wherein a distance between any point within the back volume and a nearest solid surface is less than a single thermal boundary layer thickness at an upper limit of an audio frequency band of the MEMS transducer.
11. The MEMS transducer of claim 10 ,
wherein the diaphragm is oriented substantially parallel to the counter electrode in the presence of a bias voltage between the counter electrode and the diaphragm, and
wherein the diaphragm is not parallel to the counter electrode in the absence of a bias voltage between the counter electrode and the diaphragm.
12. The MEMS transducer of claim 10 , wherein the transducer substrate comprises a plurality of channels extending away from the diaphragm.
13. The MEMS transducer of claim 10 , wherein the transducer substrate comprises a cavity in which a plurality of pillars are disposed, and wherein the counter electrode is coupled to the pillars.
14. The MEMS transducer of claim 10 , wherein a distance between the transducer substrate and the counter electrode is within a range between approximately 5 μm and 12 μm.
15. The MEMS transducer of claim 10 , wherein the diaphragm comprises a pierce extending through the diaphragm, and wherein a diameter of the pierce is within a range between approximately 0.25 μm and 2 μm.
16. The MEMS transducer of claim 1 , wherein the back volume is entirely defined as an enclosed volume positioned between the diaphragm and the counter electrode.