Charge leakage detection for memory system reliability
Methods, systems, and devices for charge leakage detection for memory system reliability are described. In accordance with examples as disclosed herein, a memory system may employ memory management techniques configured to identify precursors of charge leakage in a memory device, and take preventative action based on such identified precursors. For example, a memory system may be configured to perform a leakage detection evaluation for a memory array, which may include various biasing and evaluation operations to identify whether a leakage condition of the memory array may affect operational reliability. Based on such an evaluation, the memory device, or a host device in communication with the memory device, may take various preventative measures to avoid operational failures of the memory device or host device that may result from ongoing operation of a memory array associated with charge leakage, thereby improving reliability of the memory system.
1. A method, comprising:
performing a leakage detection evaluation for a memory array, wherein the leakage detection evaluation comprises:
applying a bias to an access line of the memory array, the access line coupled with a memory cell;
removing the bias from the access line; and
evaluating an electrical characteristic of the access line based at least in part on the applying the bias to the access line and the removing the bias from the access line, the evaluating to determine a leakage condition of the memory array; and
initiating a recovery operation based at least in part on the determined leakage condition of the memory array.
2. The method of claim 1 , wherein removing the bias from the access line comprises:
electrically floating the access line.
3. The method of claim 1 , wherein a diagnostic charge state is written to the memory cell based at least in part on applying the bias to the access line.
4. The method of claim 1 , wherein applying the bias to the access line comprises:
charging a capacitor that is coupled with the access line.
5. The method of claim 4 , wherein applying the bias to the access line comprises:
decoupling a voltage source from the access line after charging the capacitor that is coupled with the access line; and
recharging the capacitor that is coupled with the access line after decoupling the voltage source from the access line.
6. The method of claim 1 , wherein evaluating the electrical characteristic of the access line comprises:
integrating a charge leakage associated with the access line.
7. The method of claim 1 , wherein evaluating the electrical characteristic of the access line comprises:
comparing a voltage of the access line to a voltage threshold.
8. The method of claim 7 , wherein comparing the voltage of the access line to the voltage threshold comprises:
comparing, using a sense amplifier operable to detect a logic state stored by the memory cell, the voltage of the access line to a reference voltage.
9. The method of claim 8 , wherein the comparing using the sense amplifier comprises:
comparing the voltage of the access line to a first reference voltage that is different than a second reference voltage for detecting the logic state stored by the memory cell.
10. The method of claim 1 , wherein initiating the recovery operation comprises:
storing a fault indication for an address of the memory array that includes the access line.
11. The method of claim 1 , wherein initiating the recovery operation comprises:
remapping an address of the memory array that includes the access line to a different address of the memory array.
12. The method of claim 1 , wherein initiating the recovery operation comprises:
indicating, to a host device in communication with the memory array, a fault condition for an address of the memory array that includes the access line.
13. The method of claim 1 , further comprising:
receiving, from a host device coupled with a memory device that includes the memory array, a command to perform the leakage detection evaluation for the memory array.
14. The method of claim 1 , further comprising:
determining, at a memory device that includes the memory array, to perform the leakage detection evaluation for the memory array based at least in part on an operating condition of the memory device.
15. The method of claim 1 , further comprising:
determining, at a memory device that includes the memory array, to perform the leakage detection evaluation for the memory array based at least in part on performing a wear leveling operation on the memory array.
16. The method of claim 15 , wherein performing the leakage detection evaluation is based at least in part on a set of one or more memory cells that, according to the wear leveling operation, are not storing user data.
17. An apparatus, comprising:
a memory array;
a leakage detection component coupled with the memory array and configured for:
applying a bias to an access line of the memory array that is coupled with a memory cell;
removing the bias from the access line;
evaluating an electrical characteristic of the access line based at least in part on applying the bias to the access line and removing the bias from the access line; and
determining a charge leakage condition of the memory array based at least in part on evaluating the electrical characteristic; and
a memory management component coupled with the leakage detection component and configured to initiate a recovery operation of the apparatus based at least in part on the determined charge leakage condition.
18. The apparatus of claim 17 , wherein, to evaluate the electrical characteristic of the access line, the leakage detection component is configured to:
integrate a charge leakage associated with the access line.
19. The apparatus of claim 17 , wherein, to evaluate the electrical characteristic of the access line, the leakage detection component is configured to:
compare a voltage of the access line to a voltage threshold.
20. The apparatus of claim 19 , wherein the leakage detection component comprises a sense amplifier configured to detect a logic state stored by the memory cell, and wherein the sense amplifier is additionally configured to compare the voltage of the access line to the voltage threshold.
21. The apparatus of claim 20 , wherein, to evaluate the electrical characteristic of the access line, the sense amplifier is configured to compare the voltage of the access line to a first reference voltage that is different than a second reference voltage for detecting the logic state stored by the memory cell.
22. The apparatus of claim 17 , wherein the memory management component is configured to store a fault indication for an address of the memory array that includes the access line based at least in part on the determined charge leakage condition.
23. The apparatus of claim 17 , wherein the memory management component is configured to remap an address of the memory array that includes the access line to a different address of the memory array based at least in part on the determined charge leakage condition.
24. The apparatus of claim 17 , wherein the memory management component is configured to indicate, to a host device in communication with the memory array, a fault condition for an address of the memory array that includes the access line based at least in part on the determined charge leakage condition.
25. An apparatus, comprising:
a memory array; and
a memory controller coupled with the memory array and configured to:
perform a leakage detection evaluation for the memory array, wherein, to perform the leakage detection evaluation, the memory controller is operable to cause the apparatus to:
apply a bias to an access line of the memory array that is coupled with a memory cell;
remove the bias from the access line;
evaluate an electrical characteristic of the access line based at least in part on applying the bias to the access line and removing the bias from the access line, the electrical characteristic indicative of a leakage condition of the memory array; and
initiate a recovery operation based at least in part on the leakage condition of the memory array.