Automated wafer monitoring

1. A system, comprising:

a chuck;

multiple groove conduits arranged around a circumference of the chuck and configured to measure an offset of a wafer from an edge of the chuck when the wafer is placed on the chuck, wherein each groove conduit comprises a tapered portion; and

a flow monitor configured to determine an amount of gas flow from a gas source to an individual one of the multiple groove conduits.

2. The system of claim 1 , wherein each tapered portion is arranged in a curved line along a greatest distance away from a center of the wafer position.

3. The system of claim 1 , wherein the multiple groove conduits are arranged as two concentric rings, each ring comprising at least two groove conduits.

4. The system of claim 3 , wherein one of the two concentric rings comprises more groove conduits than the other.

5. The system of claim 1 , wherein the multiple groove conduits are arranged with an outer ring and an inner ring, wherein the outer ring is concentric with the inner ring and comprises more groove conduits than the inner ring.

6. The system of claim 1 , wherein the multiple groove conduits comprise a triangular shape.

7. The system of claim 1 , wherein the multiple groove conduits comprise at least four groove conduits in ring shape.

8. A system, comprising:

a chuck;

multiple groove conduits arranged around a circumference of the chuck so as to measure an offset of a wafer from an edge of the chuck when the wafer is placed on the chuck, wherein each groove conduit comprises a tapered portion;

multiple gas sources in fluid communication with a respective one of the multiple groove conduits; and

multiple flow monitors configured to determine an amount of gas flow from a respective one of the multiple gas sources to an individual one of the multiple groove conduits.

9. The system of claim 8 , wherein edges of the multiple groove conduits align with the wafer position.

10. The system of claim 8 , wherein each tapered portion varies in area with distance away from a center of the wafer position.

11. The system of claim 10 , wherein the chuck is an electrostatic chuck.

12. The system of claim 10 , wherein each tapered portion ends in a point at a greatest distance from the center of the wafer position.

13. The system of claim 9 , wherein each of the multiple gas sources comprises at least one of a helium gas and an argon gas.

14. A method, comprising:

placing a wafer on a chuck, wherein the chuck comprises multiple groove conduits arranged around a circumference of the chuck so as to measure an offset of the wafer from an edge of the chuck when the wafer is placed on the chuck, wherein each groove conduit comprises a tapered portion;

determining the offset based on an amount of gas flow from a gas source to an individual one of the multiple groove conduits; and

aligning the wafer on the chuck based on respective edges of the multiple groove conduits.

15. The method of claim 14 , further comprising:

determining the wafer offset based on an aggregate amount of gas flow from the gas source to multiple ones of the multiple groove conduits.

16. The method of claim 14 , further comprising:

determining the wafer offset based on a rate of gas flow from the gas source to the individual one of the multiple groove conduits.

17. The method of claim 14 , further comprising moving the wafer on the chuck using a robot.

18. The method of claim 14 , further comprising:

producing aggregated sensor data by aggregating sensor data produced by a flow monitor;

determining a threshold value based on the aggregated sensor data; and

determining the wafer offset based on the threshold value.

19. The method of claim 14 , further comprising cooling a backside of the wafer by the gas flow.

20. The method of claim 14 , wherein the gas flow comprising a helium gas flow.