Semiconductor package

1. A semiconductor package comprising:

an upper substrate having a first surface and a second surface opposite to each other, wherein the upper substrate is a silicon interposer substrate, and the first and second surfaces extend along a first direction;

a lower semiconductor chip disposed on the first surface of the upper substrate;

a plurality of conductive pillars disposed on the first surface of the upper substrate at at least one side of the lower semiconductor chip;

an upper semiconductor chip disposed on the second surface of the upper substrate,

wherein the lower semiconductor chip and the plurality of conductive pillars are connected to the first surface of the upper substrate, and

wherein the upper semiconductor chip is connected to the second surface of the upper substrate;

a lower substrate spaced apart from the first surface of the upper substrate, wherein the lower semiconductor chip and the plurality of conductive pillars are interposed between the lower substrate and the upper substrate; and

a lower redistribution layer between the lower substrate and the lower semiconductor chip along a second direction, and between the lower substrate and the plurality of conductive pillars along the second direction, the second direction perpendicular to the first direction,

wherein the lower semiconductor chip and the plurality of conductive pillars are connected to the lower redistribution layer.

2. The semiconductor package of claim 1 , wherein the upper semiconductor chip is one of a plurality of upper semiconductor chips laterally spaced apart from each other along the first direction on the second surface of the upper substrate, and

wherein each of the plurality of upper semiconductor chips is connected to the second surface of the upper substrate.

3. The semiconductor package of claim 1 , wherein the lower semiconductor chip is one of a plurality of lower semiconductor chips laterally spaced apart from each other along the first direction on the first surface of the upper substrate, and

wherein each of the plurality of lower semiconductor chips is connected to the first surface of the upper substrate.

4. The semiconductor package of claim 3 , wherein at least one of the plurality of lower semiconductor chips comprises at least one lower through-electrode penetrating therethrough.

5. The semiconductor package of claim 1 , wherein the silicon interposer substrate comprises metal interconnection lines,

wherein the metal interconnection lines are adjacent to the second surface of the upper substrate, and

wherein the upper semiconductor chip is connected to the metal interconnection lines.

6. The semiconductor package of claim 5 , wherein the silicon interposer substrate further comprises through-vias connected to the metal interconnection lines, and

wherein the through-vias vertically extend from the metal interconnection lines along the second direction toward the first surface of the upper substrate.

7. The semiconductor package of claim 1 , further comprising a lower mold layer on the lower redistribution layer, the lower mold layer covering the lower semiconductor chip and the plurality of conductive pillars.

8. The semiconductor package of claim 7 , further comprising an upper mold layer on the second surface of the upper substrate, the upper mold layer covering the upper semiconductor chip.

9. The semiconductor package of claim 1 , wherein the upper substrate comprises an upper redistribution layer disposed adjacent to the first surface, and

wherein the lower semiconductor chip and the plurality of conductive pillars are connected to the upper redistribution layer.

10. A semiconductor package comprising:

an upper substrate having a first surface and a second surface opposite to each other, wherein the upper substrate is a silicon interposer substrate, and the first and second surfaces extend along a first direction;

a lower semiconductor chip disposed on the first surface of the upper substrate;

a plurality of conductive pillars disposed on the first surface of the upper substrate at at least one side of the lower semiconductor chip;

an upper semiconductor chip disposed on the second surface of the upper substrate,

wherein the lower semiconductor chip and the plurality of conductive pillars are connected to the first surface of the upper substrate, and

wherein the upper semiconductor chip is connected to the second surface of the upper substrate;

a lower structure spaced apart from the first surface of the upper substrate, wherein the lower semiconductor chip and the plurality of conductive pillars are interposed between the lower structure and the upper substrate,

wherein the plurality of conductive pillars is connected to the lower structure,

and wherein the lower structure comprises a printed circuit board, a semiconductor chip, or a lower semiconductor package; and

a heat dissipation structure disposed on the lower structure and on the upper semiconductor chip, the heat dissipation structure covering the upper semiconductor chip, the upper substrate, the lower semiconductor chip, and the plurality of conductive pillars.

11. A semiconductor package comprising:

an upper substrate having a first surface and a second surface opposite to each other, wherein the upper substrate is a silicon interposer substrate comprising a through-via layer, and a metal interconnection layer on the through-via layer, the metal interconnection layer adjacent to the second surface;

a plurality of lower semiconductor chips on the first surface of the upper substrate and laterally spaced apart from each other in a first direction parallel to the first surface of the upper substrate;

a plurality of conductive pillars on the first surface of the upper substrate and laterally spaced apart from the plurality of lower semiconductor chips in the first direction;

a plurality of upper semiconductor chips on the second surface of the upper substrate and laterally spaced apart from each other in the first direction;

a lower structure spaced apart from the first surface of the upper substrate in a second direction perpendicular to the first surface of the upper substrate, wherein the plurality of lower semiconductor chips and the plurality of conductive pillars are interposed between the lower structure and the upper substrate; and

a lower redistribution layer between the lower structure and the plurality of lower semiconductor chips along the second direction, and between the lower structure and the plurality of conductive pillars along the second direction,

wherein the upper substrate comprises first upper substrate pads adjacent to the first surface, and second upper substrate pads adjacent to the second surface,

wherein each of the plurality of lower semiconductor chips include lower chip pads connected to corresponding ones of the first upper substrate pads, and the plurality of conductive pillars are connected to other corresponding ones of the first upper substrate pads,

wherein the plurality of lower semiconductor chips and the plurality of conductive pillars are connected to through-vias in the through-via layer through the first upper substrate pads,

wherein each of the plurality of upper semiconductor chips include upper chip pads connected to corresponding ones of the second upper substrate pads,

wherein the plurality of upper semiconductor chips are connected to metal interconnection lines in the metal interconnection layer through the second upper substrate pads, and

wherein the plurality of lower semiconductor chips and the plurality of conductive pillars are connected to the lower redistribution layer.

12. The semiconductor package of claim 11 , wherein each of the plurality of upper semiconductor chips includes a first surface that faces the second surface of the upper substrate, and the upper chip pads are adjacent to the first surface of the plurality of upper semiconductor chips,

wherein each of the plurality of upper semiconductor chips comprises an upper circuit layer adjacent to the first surface of the plurality of upper semiconductor chips.

13. The semiconductor package of claim 12 , wherein each of the plurality of lower semiconductor chips includes a first surface that faces the first surface of the upper substrate, and the lower chip pads are adjacent to the first surface of the plurality of lower semiconductor chips,

wherein at least one of the plurality of lower semiconductor chips comprises a lower circuit layer adjacent to the first surface of the at least one of the plurality of lower semiconductor chips.

14. The semiconductor package of claim 11 , the lower structure includes pads,

wherein the lower redistribution layer is connected to corresponding ones of the pads of the lower structure, and

wherein the lower structure comprises a printed circuit board, a semiconductor chip, or a lower semiconductor package.

15. The semiconductor package of claim 14 , further comprising a heat dissipation structure on the lower structure, the heat dissipation structure covering the plurality of upper semiconductor chips, the upper substrate, the plurality of lower semiconductor chips, and the plurality of conductive pillars.

16. The semiconductor package of claim 11 , wherein the through-vias are connected to the metal interconnection lines and extend from the metal interconnection lines toward the first surface of the upper substrate, and

wherein the upper semiconductor chips are connected to the metal interconnection lines through the upper chip pads and the second upper substrate pads.

17. The semiconductor package of claim 1 , further comprising a plurality of connection bumps disposed between and electrically connecting the lower redistribution layer and the lower substrate.