Image sensor

1. An image sensor comprising:

a substrate including a first surface;

a change storage portion disposed in the substrate;

a light-blocking pattern disposed on the first surface overlapping the charge storage portions; and

a low-refractive index pattern disposed on the light-blocking pattern,

wherein the low-refractive index pattern has one surface parallel to the first surface of the substrate, and another surface having a convex curvature.

2. The image sensor of claim 1 , further comprising:

a planarization layer between the light-blocking pattern and the low-refractive index pattern,

wherein a refractive index of the planarization layer is greater than a refractive index of the low-refractive index pattern.

3. The image sensor of claim 2 , further comprising:

an anti-reflection layer between the substrate and the light-blocking pattern; and

a color filter between the anti-reflection layer and the planarization layer,

wherein the color filter covers a top surface and a sidewall of the light-blocking pattern.

4. The image sensor of claim 1 ,

wherein the low-refractive index pattern has a lens shape,

wherein the low-refractive index pattern has a first width in a first direction parallel to the first surface of the substrate,

wherein the light-blocking pattern has a second width in the first direction, and

wherein the first width is greater than or equal to the second width.

5. The image sensor of claim 1 ,

wherein a sidewall of the low-refractive index pattern is inclined, and

wherein a cross-sectional area of the low-refractive index pattern, which is parallel to the first surface of the substrate, decreases as a distance from the light-blocking pattern increases.

6. The image sensor of claim 1 ,

wherein the low-refractive index pattern covers a top surface and both sidewalls of the light-blocking pattern, and

wherein the low-refractive index pattern is in contact with the top surface and both sidewalls of the light-blocking pattern.

7. The image sensor of claim 1 , further comprising:

a photoelectric conversion portion disposed in the substrate adjacent to the charge storage portion;

a micro lens disposed on the first surface of the substrate overlapping the photoelectric conversion portion,

wherein the micro lens is spaced apart from the low-refractive index pattern in a direction perpendicular to the first surface of the substrate, and

wherein a refractive index of the low-refractive index pattern is less than a refractive index of the micro lens.

8. The image sensor of claim 7 , wherein an edge of the micro lens overlaps with a portion of the low-refractive index pattern when viewed in a plan view.

9. The image sensor of claim 1 , further comprising:

a photoelectric conversion portion disposed in the substrate adjacent to the charge storage portion;

a second surface of the substrate disposed opposite to the first surface of the substrate;

a storage gate disposed adjacent to the second surface of the substrate and configured to transfer charges generated from the photoelectric conversion portion to the charge storage portion; and

a deep device isolation portion disposed in the substrate between the photoelectric conversion portion and the charge storage portion,

wherein the deep device isolation portion is spaced apart from the second surface.

10. The image sensor of claim 9 ,

wherein the light-blocking pattern includes: a first portion overlapping the charge storage portion; and a second portion extending from the first portion onto the deep device isolation portion,

wherein each of the first and second portions of the light-blocking pattern has a width in a first direction parallel to the first surface of the substrate, and

wherein the width of the first portion of the light-blocking pattern is greater than the width of the second portion of the light-blocking pattern.

11. The image sensor of claim 1 , further comprising:

a photoelectric conversion portion disposed in the substrate adjacent to the charge storage portion;

a conductive pattern electrically connecting the photoelectric conversion portion to the charge storage portion; and

a deep device isolation portion disposed between the photoelectric conversion portion and the charge storage portion in the substrate,

wherein the deep device isolation portion penetrates the substrate.

12. The image sensor of claim 11 ,

wherein the light-blocking pattern includes: a first portion overlapping the charge storage portion; and a second portion extending from the first portion onto the deep device isolation portion,

wherein each of the first and second portions of the light-blocking pattern has a width in a first direction parallel to the first surface of the substrate, and

wherein the width of the first portion of the light-blocking pattern is greater than the width of the second portion of the light-blocking pattern.

13. An image sensor comprising:

a pixel array including a plurality of pixels arranged in a row direction and a column direction, wherein each of the pixels comprises; a photoelectric conversion portion; and a change storage portion disposed from the photoelectric conversion portion in a diagonal direction with respect to the row direction or the column direction;

a micro lens on the photoelectric conversion portion; and

a low-refractive index pattern on the charge storage portion,

wherein the micro lens is spaced apart from the low-refractive index pattern in a vertical direction,

wherein an edge of the micro lens overlaps a portion of the low-refractive index pattern when viewed in a plan view,

wherein the low-refractive index pattern and the micro lens each have curvatures, and

wherein the curvature of the low-refractive index pattern is greater than the curvature of the micro lens.

14. The image sensor of claim 13 , wherein a maximum diameter of the low-refractive index pattern is less than a maximum diameter of the micro lens.

15. The image sensor of claim 13 , further comprising:

a light-blocking pattern between the low-refractive index pattern and the charge storage portion; and

a planarization layer between the low-refractive index pattern and the light-blocking pattern,

wherein refractive indexes of the micro lens and the planarization layer are greater than a refractive index of the low-refractive index pattern, and

wherein the refractive index of the micro lens is greater than or equal to the refractive index of the planarization layer.

16. The image sensor of claim 13 , wherein the low-refractive index pattern includes a transparent photoresist material or a transparent thermosetting resin.

17. The image sensor of claim 13 , further comprising:

a deep device isolation portion disposed on the photoelectric conversion portion,

wherein the light-blocking pattern includes: a first portion overlapping the charge storage portion; and a second portion extending from the first portion onto the deep device isolation portion,

wherein each of the first and second portions of the light-blocking pattern has a width in a first direction parallel to the first surface of the substrate, and

wherein the width of the first portion of the light-blocking pattern is greater than the width of the second portion of the light-blocking pattern.

18. An image sensor comprising:

a substrate including a first surface and a second surface disposed opposite to each other;

a charge storage portion disposed in the substrate;

first, second, third and fourth photoelectric conversion portions arranged in a clockwise direction in the substrate to surround the charge storage portion;

a light-blocking pattern disposed on the first surface overlapping the charge storage portion;

color filters disposed on the first surface overlapping the charge storage portion and overlapping the first to fourth photoelectric conversion portions, the color filters covering the light-blocking pattern;

a low-refractive index pattern on the light-blocking pattern;

a planarization layer between the light-blocking pattern and the low-refractive index pattern; and

micro lenses overlapping the first to fourth photoelectric conversion portions, respectively,

wherein the first and third photoelectric conversion portions are spaced apart from each other with the charge storage portion interposed therebetween and are symmetrical with respect to the charge storage portion,

wherein the second and fourth photoelectric conversion portions are spaced apart from each other with the charge storage portion interposed therebetween and are symmetrical with respect to the charge storage portion,

wherein an edge of each of the micro lenses overlaps with a portion of the low-refractive index pattern when viewed in a plan view,

wherein a refractive index of the low-refractive index pattern is less than a refractive index of the micro lenses, and

wherein a refractive index of the planarization layer is greater than the refractive index of the low-refractive index pattern.

19. The image sensor of claim 18 , further comprising:

a deep device isolation portion disposed between the first and second photoelectric conversion portions,

wherein the light-blocking pattern includes: a first portion overlapping the charge storage portion; and a second portion extending from the first portion onto the deep device isolation portion,

wherein each of the first and second portions of the light-blocking pattern has a width in a first direction parallel to the first surface of the substrate, and

wherein the width of the first portion of the light-blocking pattern is greater than the width of the second portion of the light-blocking pattern.

20. The image sensor of claim 19 ,

wherein the low-refractive index pattern has a lens shape,

wherein the low-refractive index pattern has a first width in the first direction,

wherein the light-blocking pattern has a second width in the first direction, and

wherein the first width is greater than or equal to the second width.