LED with light adjusting layer extending past the LED
The present disclosure provides a lighting device and a manufacturing method thereof. The lighting device of an embodiment includes a substrate, a light emitting unit and a light adjusting layer. The light emitting unit is disposed on the substrate, and the light emitting unit includes a light output surface. The light adjusting layer is disposed on the light emitting unit, and the light adjusting layer includes a first portion and a second portion connected to the first portion. Wherein, the first portion only partially covers the light output surface, and the second portion does not cover the light output surface.
1. A lighting device comprising:
a substrate;
a light emitting unit disposed on the substrate, the light emitting unit comprising a light output surface, wherein the light output surface comprises a side surface; and
a light adjusting layer disposed on the light emitting unit, wherein the light adjusting layer comprises an inorganic insulating material, the light adjusting layer comprises a first portion and a second portion connected to the first portion, the first portion only partially covers the light output surface, and the second portion does not cover the light output surface;
wherein the side surface is partially covered by the light adjusting layer, the inorganic insulating material comprises silicon nitride, silicon oxide, or a combination thereof, and in a top view, a projected area of the first portion is greater than a projected area of the second portion.
2. The lighting device according to claim 1 , wherein in the top view, a ratio of the projected area of the first portion to a projected area of the light output surface is greater than or equal to 1/10 and less than 1.
3. The lighting device according to claim 1 , wherein in the top view, a ratio of the projected area of the second portion to a projected area of the light output surface is greater than 0 and less than or equal to ½.
4. The lighting device according to claim 1 , wherein in the top view, a minimum distance between a point of the second portion farthest from the light output surface and the light output surface ranges from 3 μm to 100 μm.
5. The lighting device according to claim 1 , wherein the second portion comprises at least two parts disposed oppositely in accordance to the first portion.
6. The lighting device according to claim 1 , further comprising another light emitting unit disposed on the substrate, wherein the light adjusting layer partially covers the light emitting unit and the another light emitting unit.
7. The lighting device according to claim 1 , wherein the first portion includes a first top surface away from the substrate, the second portion includes a second top surface away from the substrate, and a roughness of the first top surface is greater than a roughness of the second top surface.
8. The lighting device according to claim 1 , wherein the first portion includes a first top surface away from the substrate and a first bottom surface opposite to the first top surface, and a roughness of the first top surface is less than a roughness of the first bottom surface.
9. The lighting device according to claim 1 , wherein the light emitting unit comprises:
a first semiconductor layer;
a light emitting layer disposed on the first semiconductor layer; and
a second semiconductor layer disposed on the light emitting layer;
wherein a ratio of a thickness of the light adjusting layer to a total thickness of the first semiconductor layer, the light emitting layer and the second semiconductor layer is greater than or equal to 0.006 and less than or equal to 0.16.
10. The lighting device according to claim 1 , wherein a thickness of the light adjusting layer is greater than or equal to 0.05 μm and less than or equal to 0.5 μm.