Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.
1. A semiconductor device, comprising:
a metal interconnection on a substrate, wherein the metal interconnection comprises:
a metal layer;
a first synthetic antiferromagnetic (SAF) layer on one side of the metal layer; and
a second SAF layer on another side of the metal layer, wherein top surfaces of the metal layer, the first SAF layer, and the second SAF layer are coplanar; and
a magnetic tunneling junction (MTJ) on the metal interconnection.
2. The semiconductor device of claim 1 , further comprising:
a barrier layer around the metal layer;
the first SAF layer adjacent to one side of the metal layer on the barrier layer; and
the second SAF layer adjacent to another side of the metal layer on the barrier layer.
3. The semiconductor device of claim 2 , wherein each of the first SAF layer and the second SAF layer comprises:
a first ferromagnetic layer;
a spacer on the first ferromagnetic layer; and
a second ferromagnetic layer on the spacer.
4. The semiconductor device of claim 3 , wherein the first ferromagnetic layer and the second ferromagnetic layer comprise cobalt-iron-boron (CoFeB).
5. The semiconductor device of claim 3 , wherein the spacer comprises a non-magnetic layer.