Reflection minimization for sensor

1. An electronic device comprising:

a substrate layer having a front surface and a back surface opposite the front surface, the substrate layer comprising a plurality of control elements for controlling ultrasonic transducers and interconnections supporting electrical communication between the ultrasonic transducers and the plurality of control elements; and

a plurality of ultrasonic transducers formed on the front surface of the substrate layer, wherein the plurality of ultrasonic transducers generate forward waves and backward waves during operation, the forward waves propagating away from the substrate layer for interaction with an object and the backward waves propagating into and through the substrate layer; and

a plurality of substrate structures formed within the back surface of the substrate layer, the plurality of substrate structures configured to reduce an impact of the backward waves on a signal generated by reflected waves received responsive to the forward waves reflecting off of the object during the operation.

2. The electronic device of claim 1 , wherein the plurality of substrate structures comprises scattering structures configured to modify a direction of the backward waves during the operation.

3. The electronic device of claim 2 , wherein the scattering structures are dimensioned to create destructive interference of the backward waves.

4. The electronic device of claim 1 , wherein the plurality of substrate structures comprises absorption structures comprising acoustic absorption material to modify an amplitude of the backward waves during the operation.

5. The electronic device of claim 1 , wherein the plurality of ultrasonic transducers are Piezoelectric Micromachined Ultrasonic Transducer (PMUT) devices.

6. The electronic device of claim 5 , wherein a PMUT device of the plurality of ultrasonic transducers comprises:

a support structure connected to the substrate layer; and

a membrane connected to the support structure such that a cavity is defined between the membrane and the substrate layer, the membrane configured to allow movement at ultrasonic frequencies, the membrane comprising:

a piezoelectric layer,

first and second electrodes coupled to opposing sides of the piezoelectric layer, and

a mechanical support layer connected to the first electrode.

7. The electronic device of claim 6 , wherein the support structure is one of an edge support structure and an interior support structure disposed within the cavity and connected to the substrate layer and the membrane.

8. The electronic device of claim 6 , wherein the plurality of substrate structures are aligned with support structures of the plurality of ultrasonic transducers.

9. The electronic device of claim 6 , wherein dimensions of the plurality of substrate structures are related to dimensions of support structures of the plurality of ultrasonic transducers.

10. The electronic device of claim 1 , wherein dimensions of the plurality of substrate structures are related to operating characteristics of the plurality of ultrasonic transducers.

11. The electronic device of claim 1 , further comprising a mounting substrate comprising a plurality of absorption structures, wherein the mounting substrate is coupled to the back surface of the substrate layer.

12. An electronic device comprising:

a substrate layer having a front surface and a back surface opposite the front surface, the substrate layer comprising a plurality of control elements for controlling ultrasonic transducers and interconnections supporting electrical communication between the ultrasonic transducers and the plurality of control elements; and

a plurality of ultrasonic transducers formed on the front surface of the substrate layer, the plurality of ultrasonic transducers comprising support structures coupled to the front surface of the substrate layer, wherein the plurality of ultrasonic transducers generate forward waves and backward waves during operation, the forward waves propagating away from the substrate layer for interaction with an object and the backward waves propagating from the support structures into and through the substrate layer, the support structures having a shape configured to minimize contribution of the backward waves on a signal generated by reflected waves received responsive to the forward waves reflecting off of the object during the operation.

13. The electronic device of claim 12 , wherein the shape of the support structures is configured to control a direction of the backward waves.

14. The electronic device of claim 12 , wherein the shape of the support structures is configured to control a stiffness of the support structures with respect to a stiffness of a membrane of an ultrasonic transducer of the plurality of ultrasonic transducers.

15. The electronic device of claim 12 , wherein the support structures comprise edge support structures and interior support structures disposed within cavities of the plurality of ultrasonic transducers.

16. The electronic device of claim 12 , further comprising:

a plurality of substrate structures formed within the back surface of the substrate layer, the plurality of substrate structures configured to modify the backward waves during the operation.

17. The electronic device of claim 16 , wherein the plurality of substrate structures comprises scattering structures configured to modify a direction of the backward waves during the operation.

18. The electronic device of claim 16 , wherein the plurality of substrate structures comprises absorption structures comprising acoustic absorption material to modify an amplitude of the backward waves during the operation.

19. The electronic device of claim 12 , further comprising a mounting substrate comprising a plurality of absorption structures, wherein the mounting substrate is coupled to the back surface of the substrate layer.

20. An electronic device comprising:

a substrate layer having a front surface and a back surface opposite the front surface; and

a plurality of ultrasonic transducers formed on the front surface of the substrate layer, wherein the plurality of ultrasonic transducers generate forward waves and backward waves during operation, the forward waves propagating away from the substrate layer for interaction with an object and the backward waves propagating into and through the substrate layer; and

a mounting substrate comprising a plurality of absorption structures comprising acoustic absorption material to reduce an amplitude of the backward waves during the operation, wherein the mounting substrate is coupled to the back surface of the substrate layer.

21. The electronic device of claim 20 , further comprising:

a second plurality of absorption structures formed within the back surface of the substrate layer, the second plurality of absorption structures comprising the acoustic absorption material to modify the amplitude of the backward waves during the operation.

22. The electronic device of claim 21 , wherein the acoustic absorption material is configured to bond the substrate layer to the mounting substrate.

23. The electronic device of claim 21 , wherein plurality of absorption structures are aligned with support structures of the second plurality of absorption structures.

24. The electronic device of claim 20 , further comprising:

a plurality of spacers coupled to the back surface of the substrate layer and a surface of the mounting substrate, wherein the spacers define an airgap between the substrate layer and the mounting substrate, the airgap to modify amplitude of the backward waves during operation.