Methods including panel bonding acts and electronic devices including cavities

1. A method, comprising:

bonding a first panel of a first material to a base panel in a first gas atmosphere, wherein multiple hermetically sealed first cavities encapsulating gas of the first gas atmosphere are formed between the first panel and the base panel; and

bonding a second panel of a second material to the base panel, wherein multiple second cavities are formed between the second panel and the base panel, the first panel and the second panel being bonded to an identical surface of the base panel.

2. The method of claim 1 , wherein

the second panel is bonded in a second gas atmosphere different from the first gas atmosphere, and

the second cavities are hermetically sealed and encapsulate gas of the second gas atmosphere.

3. The method of claim 2 , further comprising:

singulating the bonded panels into multiple devices, wherein each of the devices comprises at least two cavities, wherein a first cavity of the at least two cavities comprises gas of the first gas atmosphere and a second cavity of the at least two cavities comprises gas of the second gas atmosphere.

4. The method of claim 1 , wherein at least one of the first material and the second material is airtight.

5. The method of claim 1 , wherein at least one of the first material and the second material comprises at least one of a semiconductor material, a glass material, a ceramic material.

6. The method of claim 1 , wherein at least one of the first panel and the second panel

comprises multiple recesses,

is bonded to a planar surface of the base panel, and

the cavities formed between the base panel and the at least one of the first panel and the second panel are formed by sections of the planar surface and the recesses.

7. The method of claim 1 , wherein at least one of bonding the first panel and bonding the second panel comprises at least one of anodic bonding, soldering, gluing, metal-to-metal bonding.

8. The method of claim 1 , further comprising:

at least partially removing material from the first panel before bonding the second panel.

9. The method of claim 1 , further comprising:

arranging electronic components over the base panel before bonding the first panel and bonding the second panel, wherein at least one of the electronic components is arranged in at least one of the first cavities and the second cavities after bonding the first panel and bonding the second panel.

10. The method of claim 1 , wherein the base panel comprises a semiconductor material and the method further comprises:

integrating electronic components in the semiconductor material of the base panel before bonding the first panel and bonding the second panel, wherein at least one of the integrated electronic components is arranged in at least one of the first cavities and the second cavities after bonding the first panel and bonding the second panel.

11. The method of claim 1 , wherein at least one of the base panel, the first panel and the second panel comprises one or more from a group consisting of: electrical through connections, conductor lines, electrical redistribution layers, optical connections, fluidic connections.

12. A method, comprising:

bonding a first panel of a first airtight material to a surface of a base panel in a first gas atmosphere, wherein multiple hermetically sealed first cavities encapsulating gas of the first gas atmosphere are formed between the first panel and the base panel; and

bonding multiple caps of a second airtight material to the surface of the base panel in a second gas atmosphere different from the first gas atmosphere, wherein multiple hermetically sealed second cavities encapsulating gas of the second gas atmosphere are formed between the multiple caps and the base panel, where each of the multiple hermetically sealed second cavities is formed by one of the caps.

13. The method of claim 12 , further comprising:

singulating an arrangement comprising the base panel, the first panel and the multiple caps into multiple devices, wherein each of the devices comprises at least two cavities, wherein a first cavity of the at least two cavities comprises gas of the first gas atmosphere and a second cavity of the at least two cavities comprises gas of the second gas atmosphere.