IP Library › Granted Patent US 11,519,947
Granted Patent B2
US 11,519,947 · App. 16/755,038 · Granted Dec 6, 2022

SMA wire resistance measurement

Inventors: Mark George Easton (Cambridge, GB); Jonathan Morgan (Cambridge, GB)
Assignee: CAMBRIDGE MECHATRONICS LIMITED
G01R27/02G02B7/02F03G7/065
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Quick Facts
Patent No.
US 11,519,947
App. No.
16/755,038
Granted
Dec 6, 2022
Kind
B2
Abstract

An apparatus is disclosed for measuring the resistance of a shape memory alloy, SMA, wire. The apparatus comprises: an SMA wire; a sense resistor connected in series with the SMA wire; a measurement circuit configured to perform a measurement indicative of the potential difference across at least the SMA wire; and a measurement switch between the SMA wire and the sense resistor. The measurement switch is configured to connect either to the measurement circuit such that the measurement circuit can perform the measurement or to a circuit that bypasses the sense resistor.

Claims (16)

1. An apparatus for measuring the resistance of a shape memory alloy (SMA) wire, the apparatus comprising:

an SMA wire;

a sense resistor connected in series with the SMA wire; and

a measurement circuit configured to perform a measurement indicative of the potential difference across at least the SMA wire scaled relative to a reference potential;

wherein the reference potential is connected to a supply potential at the opposite side of the sense resistor from the SMA wire such that the reference potential is equal to the supply potential.

2. The apparatus of claim 1 , further comprising a sample and hold circuit, wherein the sample and hold circuit is configured to sample a voltage for inputting to the measurement circuit.

3. The apparatus of claim 2 , wherein the sample and hold circuit comprises a capacitor for storing charge during a settling time of the measurement circuit.

4. The apparatus of claim 3 , comprising at least one discharge switch arranged in parallel to the capacitor, and wherein the at least one discharge switch is configured to selectably connect the capacitor to a terminal for at least partially discharging the capacitor.

5. The apparatus of claim 1 , wherein the measurement circuit comprises an amplifier, and wherein the amplifier is configured to amplify the difference between potential difference across at least the SMA wire and an offset potential.

6. The apparatus of claim 5 , comprising:

a digital-to-analog converter, wherein the digital-to-analog converter is configured to generate and supply the offset potential to the amplifier.

7. The apparatus of claim 1 , comprising a drive switch configured to allow current to flow through the SMA wire when closed, and wherein the measurement circuit is connected to a terminal between the drive switch and the SMA wire such that the measurement circuit is configured to perform the measurement indicative of the potential difference across the SMA wire but not across the drive switch.

8. A method of measuring the resistance of a shape memory alloy (SMA) wire, the method comprising:

allowing current to flow through an SMA wire and a sense resistor connected in series with the SMA wire; and

performing a measurement indicative of the potential difference across at least the SMA wire scaled relative to a reference potential;

wherein the reference potential is connected to a supply potential at the opposite side of the sense resistor from the SMA wire such that the reference potential is equal to the supply potential.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 28, 2020
From: EASTON, MARK GEORGE; MORGAN, JONATHAN
To: CAMBRIDGE MECHATRONICS LIMITED
Reel/Frame 053327/0933 →
Priority Claims (1)
GB 1716669 · Oct 11, 2017 · national
Continuity (1)
Related Publication 20210190842A1 · Jun 24, 2021
Cited By (1)
US 12,282,244