IP Library › Granted Patent US 11,521,825
Granted Patent B2
US 11,521,825 · App. 17/200,419 · Granted Dec 6, 2022

System and method for predicting stochastic-aware process window and yield and their use for process monitoring and control

Inventor: Chris Mack (Austin, TX)
Assignee: Fractilia, LLC
H01J37/222G01Q30/02G01Q30/06G06T5/002G06T7/13G06T7/40G06T7/42G06T7/49H01J37/28G06T2207/10061G06T2207/30148H01J2237/2814H01J2237/2817
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,521,825
App. No.
17/200,419
Granted
Dec 6, 2022
Kind
B2
Abstract

In one embodiment, a method includes generating a model trained to predict a low-probability stochastic defect, using the model to predict the low-probability stochastic defect, determining a process window based on the low-probability stochastic defect, and controlling, based on the process window, a lithography tool to manufacture a device.

Claims (46)

1. A method, comprising:

generating a model trained to predict a low-probability stochastic defect;

using the model to predict the low-probability stochastic defect;

determining a process window based on the low-probability stochastic defect; and

controlling, based on the process window, a lithography tool to manufacture a device.

2. The method of claim 1 , wherein the process window is determined based on one or more parameters of a lithography tool.

3. The method of claim 2 , further comprising modifying the one or more parameters based on the low-probability stochastic defect.

4. The method of claim 2 , wherein the one or more parameters comprise an exposure dose of a lithography tool.

5. The method of claim 2 , wherein the one or more parameters comprise a focus of a lithography tool.

6. The method of claim 1 , wherein:

the stochastic defect comprises a bridge or a break in a pattern of lines and spaces manufactured in a specific way,

calibrating is performed by measuring a stochastic behavior of a sampling of lines and spaces manufactured in the specific way, and

the stochastic behavior is characterized by a standard deviation of an edge position or linewidth, by a power spectral density of measured deviations, by a local critical dimension uniformity of short line segments as a function of a length of the line segments, by another metric, or some combination thereof.

7. The method of claim 1 , wherein:

the stochastic defect comprises a merged contact hole or pillar feature, a missing contact hole or pillar feature, or both, and

calibrating is performed by measuring a distribution of contact hole or pillar feature sizes on a sample of having a certain size.

8. The method of claim 1 , further comprising:

generating a yield model trained to predict an amount of yield based on one or more stochastic defects; and

determining, using the yield model, the amount of yield by inputting the stochastic defect probability into the yield model.

9. A system comprising:

a memory device storing instructions; and

a processing device communicatively coupled to the memory device, wherein the processing device executes the instructions to:

generate a model trained to predict a low-probability stochastic defect;

use the model to predict the low-probability stochastic defect; determining a process window based on the low-probability stochastic defect; and

control, based on the process window, a lithography tool to manufacture a device.

10. The system of claim 9 , wherein the process window is determined based on one or more parameters of a lithography tool.

11. The system of claim 10 , further comprising modifying the one or more parameters based on the low-probability stochastic defect.

12. The system of claim 10 , wherein the one or more parameters comprise an exposure dose of a lithography tool.

13. The system of claim 10 , wherein the one or more parameters comprise a focus of a lithography tool.

14. The system of claim 10 , wherein:

the stochastic defect comprises a bridge or a break in a pattern of lines and spaces manufactured in a specific way,

calibrating is performed by measuring a stochastic behavior of a sampling of lines and spaces manufactured in the specific way, and

the stochastic behavior is characterized by a standard deviation of an edge position or linewidth, by a power spectral density of measured deviations, by a local critical dimension uniformity of short line segments as a function of a length of the line segments, by another metric, or some combination thereof.

15. The system of claim 10 , wherein:

the stochastic defect comprises a merged contact hole or pillar feature feature, a missing contact hole or pillar feature, or both, and

the calibrating is performed by measuring a distribution of contact hole or pillar feature sizes on a sample of having a certain size.

16. The system of claim 10 , wherein the processing device is further configured to:

generate a yield model trained to predict an amount of yield based on one or more stochastic defects; and

determine, using the yield model, the amount of yield by inputting the stochastic defect probability into the yield model.

17. A tangible, non-transitory computer-readable medium storing instructions that, when executed, cause a processing device to:

generate a model trained to predict a low-probability stochastic defect;

use the model to predict the low-probability stochastic defect; determining a process window based on the low-probability stochastic defect; and

control, based on the process window, a lithography tool to manufacture a device.

18. The computer-readable medium of claim 17 , wherein the process window is determined based on one or more parameters of a lithography tool.

19. The computer-readable medium of claim 18 , further comprising modifying the one or more parameters based on the low-probability stochastic defect.

20. The computer-readable medium of claim 18 , wherein the one or more parameters comprise at least one of an exposure dose of a lithography tool and a focus of a lithography tool.

Continuity (11)
Continuation In Part 17097593 · Nov 13, 2020
Continuation In Part 16730393 · Dec 30, 2019
Continuation 16716131 · Dec 16, 2019
Continuation 16222668 · Dec 17, 2018
Continuation 16218346 · Dec 12, 2018
Continuation In Part 15892080 · Feb 8, 2018
Continuation 15892080 · Feb 8, 2018
Provisional Application 62739721 · Oct 1, 2018
Provisional Application 62678866 · May 31, 2018
Provisional Application 62602152 · Apr 13, 2017
Related Publication 20210225609A1 · Jul 22, 2021