IP Library › Granted Patent US 11,521,931
Granted Patent B2
US 11,521,931 · App. 16/902,768 · Granted Dec 6, 2022

Microelectronic structures including bridges

Inventors: Jason M. Gamba (Gilbert, AZ); Nitin A. Deshpande (Chandler, AZ); Mohit Bhatia (Chandler, AZ); Omkar G. Karhade (Chandler, AZ); Bai Nie (Chandler, AZ); Gang Duan (Chandler, AZ); Kristof Kuwawi Darmawikarta (Chandler, AZ); Wei-Lun Jen (Chandler, AZ)
Assignee: Intel Corporation
H01L23/5384H01L23/49827H01L24/17H01L2224/1703
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Quick Facts
Patent No.
US 11,521,931
App. No.
16/902,768
Granted
Dec 6, 2022
Kind
B2
Abstract

Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

Claims (36)

1. A microelectronic structure, comprising:

a substrate including a surface insulation material at a face of the substrate;

a cavity in the substrate, wherein the cavity extends through the surface insulation material and the surface insulation material does not extend above the cavity, and wherein the cavity is tapered, narrowing towards a bottom of the cavity; and

a bridge component in the cavity, wherein the bridge component includes a first face and an opposing second face, the second face of the bridge component is between the first face of the bridge component and the substrate, and the bridge component includes conductive contacts at the first face of the bridge component.

2. The microelectronic structure of claim 1 , wherein the substrate includes an organic dielectric material.

3. The microelectronic structure of claim 1 , wherein the substrate includes a conductive contact at the face of the substrate, the surface insulation material includes an opening, and the conductive contact of the substrate is at a bottom of the opening.

4. The microelectronic structure of claim 1 , wherein a dielectric material of the substrate is at a bottom of the cavity.

5. The microelectronic structure of claim 1 , wherein a metal is at a bottom of the cavity.

6. A microelectronic structure, comprising:

a substrate including a surface insulation material at a face of the substrate;

a cavity in the substrate, wherein the cavity extends through the surface insulation material and the surface insulation material does not extend above the cavity, wherein a dielectric material of the substrate is at a bottom of the cavity, and wherein the bottom of the cavity is coplanar with a bottom of a conductive contact of the substrate at the face of the substrate; and

a bridge component in the cavity, wherein the bridge component includes a first face and an opposing second face, the second face of the bridge component is between the first face of the bridge component and the substrate, and the bridge component includes conductive contacts at the first face of the bridge component.

7. A microelectronic assembly, comprising:

a substrate;

a cavity at a face of the substrate;

a bridge component in the cavity, wherein the bridge component includes a first face and an opposing second face, the second face of the bridge component is between the first face of the bridge component and the substrate, and the bridge component includes conductive contacts at the first face of the bridge component;

a first microelectronic component having a first face and an opposing second face, the first face of the first microelectronic component is between the second face of the first microelectronic component and the substrate, the first microelectronic component includes conductive contacts at the first face of the first microelectronic component, some of the conductive contacts of the first microelectronic component are conductively coupled to conductive contacts of the substrate at the face of the substrate, and some of the conductive contacts of the first microelectronic component are conductively coupled to conductive contacts at the first face of the bridge component; and

a second electronic component having a first face and an opposing second face, the first face of the second electronic component is between the second face of the second electronic component and the substrate, the second electronic component includes conductive contacts at the first face of the second electronic component, some of the conductive contacts of the second electronic component are conductively coupled to conductive contacts of the substrate at the face of the substrate, and some of the conductive contacts of the second electronic component are conductively coupled to conductive contacts at the first face of the bridge component.

8. The microelectronic assembly of claim 7 , wherein a dielectric material of the substrate is at a bottom of the cavity.

9. The microelectronic assembly of claim 7 , wherein a metal is at a bottom of the cavity.

10. The microelectronic assembly of claim 9 , wherein a bottom of the metal is coplanar with a bottom of surface insulation material at the face of the substrate.

11. The microelectronic assembly of claim 9 , wherein the metal extends onto surface insulation material at side faces of the cavity.

12. The microelectronic assembly of claim 9 , wherein the metal has a thickness that is less than a thickness of a conductive contact of the substrate at the face of the substrate.

13. The microelectronic assembly of claim 9 , wherein a top of the metal is coplanar with a top of a conductive contact of the substrate at the face of the substrate.

14. The microelectronic assembly of claim 9 , wherein the bridge component is coupled to the metal.

15. The microelectronic assembly of claim 7 , wherein a pitch of conductive contacts of the substrate is greater than a pitch of conductive contacts of the bridge component.

16. An electronic device, comprising:

a circuit board; and

a microelectronic assembly conductively coupled to the circuit board, wherein the microelectronic assembly includes:

a substrate having a conductive contact at a face of the substrate;

a cavity at a face of the substrate, wherein the cavity includes a metal at a bottom of the cavity and a top of the metal is coplanar with a top of the conductive contact at the face of the substrate;

a bridge component in the cavity; and

a microelectronic component having a first face and an opposing second face, the first face of the microelectronic component is between the second face of the microelectronic component and the substrate, the microelectronic component includes conductive contacts at the first face of the microelectronic component, some of the conductive contacts of the microelectronic component are coupled by solder to conductive contacts of the substrate, and some of the conductive contacts of the microelectronic component are coupled by solder to conductive contacts of the bridge component.

17. The electronic device of claim 16 , further comprising:

a fill compound between the microelectronic component and the substrate.

18. The electronic device of claim 16 , wherein the microelectronic component includes a transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 15, 2020
From: GAMBA, JASON M.; DESHPANDE, NITAN A.; BHATIA, MOHIT; KARHADE, OMKAR G.; NIE, BAI; DUAN, GANG; DARMAWIKARTA, KRISTOF KUWANWI; JEN, WEI-LUN
To: INTEL CORPORATION
Reel/Frame 053214/0420 →
Continuity (1)
Related Publication 20210391266A1 · Dec 16, 2021
Cited By (2)
US 12,272,650 US 12,412,868