Diode devices and methods of forming diode devices
A diode device may be provided, including a semiconductor substrate including a well region arranged therein, a first doped region and a second doped region arranged within the well region, a first contact region arranged within the first doped region, and an isolation structure arranged within the first doped region, where an oxide layer may line a surface of the isolation structure. The first doped region and the first contact region may have a first conductivity type, and the well region and the second doped region may have a second conductivity type different from the first conductivity type. A doping concentration of the first contact region may be higher than a doping concentration of the first doped region, and a part of the first doped region may be arranged between the first contact region and the well region.
1. A diode device comprising:
a semiconductor substrate comprising a well region arranged therein;
a first doped region and a second doped region arranged within the well region;
a first contact region arranged within the first doped region, wherein a doping concentration of the first contact region is higher than a doping concentration of the first doped region, and wherein a part of the first doped region is arranged between the first contact region and the well region; and
an isolation structure arranged within the first doped region; wherein an oxide layer lines a surface of the isolation structure,
wherein the oxide layer comprises:
a first portion arranged between the first contact region and the isolation structure; and
a second portion arranged under the first portion,
wherein the first portion extends further in a direction away from the surface of the isolation structure than the second portion,
wherein the first doped region and the first contact region have a first conductivity type, and wherein the well region and the second doped region have a second conductivity type different from the first conductivity type.
2. The diode device of claim 1 , wherein the first portion of the oxide layer contacts the first contact region and the isolation structure.
3. The diode device of claim 1 , wherein the first portion of the oxide layer and the first contact region are substantially horizontally aligned along a top surface of the semiconductor substrate; and
wherein the first portion of the oxide layer extends further in a direction away from the top surface of the semiconductor substrate than the first contact region.
4. The diode device of claim 1 , wherein the first doped region comprises:
a first segment substantially horizontally aligned along a top surface of the semiconductor substrate; and
a second segment arranged under the first segment;
wherein the first segment extends beyond the second segment in a direction away from the isolation structure.
5. The diode device of claim 1 , wherein the isolation structure is a deep trench isolation structure.
6. The diode device of claim 1 , wherein a part of the well region is arranged between the first doped region and the second doped region.
7. The diode device of claim 1 , further comprising a second contact region of the second conductivity type arranged within the second doped region, wherein a doping concentration of the second contact region is higher than a doping concentration of the second doped region.
8. The diode device of claim 1 , further comprising a further first contact region of the first conductivity type arranged within the first doped region, wherein a doping concentration of the further first contact region is higher than a doping concentration of the first doped region.
9. The diode device of claim 1 , further comprising a further second doped region of the second conductivity type arranged within the well region, and a further second contact region of the second conductivity type arranged within the further second doped region, wherein the further second contact region has a higher doping concentration than the further second doped region.
10. The diode device of claim 1 , further comprising an isolation element arranged horizontally between the first doped region and the second doped region.
11. The diode device of claim 10 , wherein the isolation element contacts the first doped region.
12. The diode device of claim 10 , wherein the isolation element extends partially into the second doped region.
13. The diode device of claim 1 , wherein the semiconductor substrate comprises a silicon-on-insulator substrate.
14. The diode device of claim 1 , further comprising an additional isolation structure arranged horizontally adjacent to the second doped region, wherein the second doped region is horizontally between the additional isolation structure and the first doped region.
15. The diode device of claim 14 , wherein an additional oxide layer lines a surface of the additional isolation structure, wherein the additional oxide layer extends partially into the second doped region.
16. The diode device of claim 14 , wherein the additional oxide layer comprises a first portion extending partially into the second doped region and a second portion arranged under the first portion, wherein a thickness of the first portion is greater than a thickness of the second portion.
17. The diode device of claim 1 , wherein the isolation structure comprises a first hollow cylindrical structure and a second hollow cylindrical structure connected to form a continuous cylindrical structure having a trench therein, and wherein the trench comprises oxide.
18. The diode device of claim 1 , wherein the diode device comprises an avalanche photodiode.
19. A method for forming a diode device, the method comprising:
providing a semiconductor substrate;
forming a well region within the semiconductor substrate;
forming a first doped region and a second doped region within the well region;
forming a first contact region within the first doped region, wherein a doping concentration of the first contact region is higher than a doping concentration of the first doped region, and wherein a part of the first doped region is arranged between the first contact region and the well region; and
forming an isolation structure within the first doped region and an oxide layer lining a surface of the isolation structure,
wherein the oxide layer comprises:
a first portion arranged between the first contact region and the isolation structure; and
a second portion arranged under the first portion,
wherein the first portion extends further in a direction away from the surface of the isolation structure than the second portion,
wherein the first doped region and the first contact region have a first conductivity type, and wherein the well region and the second doped region have a second conductivity type different from the first conductivity type.