Vertical AL/EPI SI/AL, and also AL/AL oxide/AL, josephson junction devices for qubits
View Patent ↗A vertical Josephson junction device includes a substrate, and an epitaxial stack formed on the substrate. The vertical Josephson junction device includes a first superconducting electrode embedded in the epitaxial stack, and a second superconducting electrode embedded in the epitaxial stack, the second superconducting electrode being separated from the first superconducting electrode by a dielectric layer. In operation, the first superconducting electrode, the dielectric layer, and the second superconducting electrode form a vertical Josephson junction.
1. A vertical Josephson junction device, comprising:
a substrate;
an epitaxial stack formed on the substrate;
a first superconducting electrode embedded in said epitaxial stack; and
a second superconducting electrode embedded in said epitaxial stack, said second superconducting electrode being separated from said first superconducting electrode by a dielectric layer,
wherein, in operation, said first superconducting electrode, said dielectric layer, and said second superconducting electrode form a vertical Josephson junction, and
wherein said epitaxial stack laterally encases said vertical Josephson junction.
2. The vertical Josephson junction device according to claim 1 , wherein said dielectric layer comprises a layer of said epitaxial stack.
3. The vertical Josephson junction device according to claim 1 , wherein said dielectric layer comprises an oxide layer formed on said first superconducting electrode.
4. The vertical Josephson junction device according to claim 1 , further comprising a first superconducting wire connected to said first superconducting electrode, and a second superconducting wire connected to said second superconducting electrode.
5. The vertical Josephson junction device according to claim 4 , wherein said first superconducting wire and said second superconducting wire are formed on a surface of said epitaxial stack.
6. The vertical Josephson junction device according to claim 4 , wherein said vertical Josephson junction device is a Josephson junction qubit.
7. A vertical Josephson junction device, comprising:
a substrate;
an epitaxial stack formed on the substrate;
a first superconducting electrode embedded in said epitaxial stack; and
a second superconducting electrode embedded in said epitaxial stack, said second superconducting electrode being separated from said first superconducting electrode by a dielectric layer,
wherein, in operation, said first superconducting electrode, said dielectric layer, and said second superconducting electrode form a vertical Josephson junction, and
wherein said epitaxial stack isolates said vertical Josephson junction from an environment.
8. A vertical Josephson junction device, comprising:
a substrate;
an epitaxial stack formed on the substrate;
a first superconducting electrode embedded in said epitaxial stack; and
a second superconducting electrode embedded in said epitaxial stack, said second superconducting electrode being separated from said first superconducting electrode by a dielectric layer,
wherein, in operation, said first superconducting electrode, said dielectric layer, and said second superconducting electrode form a vertical Josephson junction, and
wherein said epitaxial stack comprises a SiGe epitaxial film and a Si epitaxial film.
9. The vertical Josephson junction device according to claim 8 , wherein said epitaxial stack further comprises a second SiGe epitaxial film.