Rechargeable battery and method for manufacturing the same
A rechargeable battery includes at least an electrolyte layer, a cathode layer and an anode layer. The electrolyte layer includes a lithium salt compound arranged between a cathode surface of the cathode layer and an anode surface of the anode layer. The anode layer is a nanostructured silicon containing thin film layer including a plurality of columns, wherein the columns are directed in a first direction perpendicular or substantially perpendicular to the anode surface of the silicon thin film layer. The columns are arranged adjacent to each other while separated by grain-like column boundaries running along the first direction. The columns include silicon and have an amorphous structure in which nano-crystalline regions exist.
1. A method for manufacturing a rechargeable battery including at least an electrolyte layer, a cathode layer, and an anode layer, the method comprising:
forming directly on either an exposed metallic substrate surface or an exposed metallic substrate layer surface, a nanostructured silicon thin film layer as the anode layer, by deposition of the anode layer on the exposed metallic substrate surface or the exposed metallic substrate layer surface by a low pressure plasma enhanced chemical vapor deposition (PECVD) process using a microwave plasma of a mixture comprising a silicon containing gas and hydrogen (H 2 ), the forming process being a self-organizing process configured to create the nanostructured silicon thin film layer as a continuous nanostructured silicon thin film layer consisting of a plurality of columns comprising dendritic or multibranch columns, the plurality of columns extending in a perpendicular direction from the substrate and arranged adjacent to each other while separated by column boundaries extending in the perpendicular direction, the plurality of columns comprising amorphous silicon-based material consisting of either amorphous silicon or an amorphous silicon-based alloy or an amorphous silicon-based mixture in which amorphous silicon-based material comprises protocrystalline silicon consisting of amorphous silicon comprising a fraction of nanocrystalline silicon, the fraction of nanocrystalline silicon being up to about 80% of the nanostructured silicon thin film layer;
providing a lithium salt compound as the electrolyte layer; and
arranging the electrolyte layer between a cathode surface of the cathode layer and an anode surface of the nanostructured thin film,
wherein the plurality of columns have a length in the perpendicular direction from the substrate of about 0.1 micrometers to about 10 micrometers, and each one of the columns has an average footprint configured to reduce cracking and pulverization of the nanostructured silicon thin film layer of about 0.25 micrometers squared to about 0.5 micrometers squared.
2. The method according to claim 1 , wherein the microwave plasma is created by an elongated antenna wire, each end of the elongated antenna wire being coupled to a microwave generator.
3. The method according to claim 1 , wherein the mixture of the silicon containing gas and H 2 further comprises an alloying component, to form the silicon alloy.
4. The method according to claim 1 , wherein the forming of the nanostructured silicon thin film layer comprises adding a doping precursor of either n-type or p-type for doping the nanostructured silicon thin film layer either as an n-type conductive layer or a p-type conductive layer.
5. The method according to claim 3 , wherein the mixture of the silicon containing gas and H 2 further comprises argon.
6. The method according to claim 1 , wherein the substrate comprises a metallic conductor layer or a semiconductor layer.
7. The method according to claim 1 , wherein the silicon containing gas is selected from a group comprising silane and chlorosilanes.