Cleaning method and plasma processing apparatus
A cleaning method is provided. In the cleaning method, residues of elements of a group for a common semiconductor material in a chamber are removed with plasma of a halogen-containing gas. Residues of metal elements of groups 12 and 13 and groups 14 and 15 in the chamber are removed with plasma of a hydrocarbon-containing gas. A C-containing material in the chamber is removed with plasma of an O-containing gas. Further, the removing with the plasma of the halogen-containing gas, the removing with the plasma of the hydrocarbon-containing gas, and the removing with the plasma of the O-containing gas are performed in that order or the removing with the plasma of the hydrocarbon-containing gas, the removing with the plasma of the O-containing gas, and the removing with the plasma of the halogen-containing gas are performed in that order X times where X≥1.
1. A cleaning method comprising:
removing a first residue in a chamber with a plasma of a halogen-containing gas, wherein the first residue comprises one or more elements from the group consisting of silicon, germanium, boron, phosphorus, arsenic, nitrogen, carbon, sulfur, selenium, and tellurium;
removing residues of metal elements of groups 12 and 13 and residues of metal elements of groups 14 and 15 in the chamber with a plasma of a hydrocarbon-containing gas; and
removing a C-containing material in the chamber with a plasma of an O-containing gas,
wherein said removing with the plasma of the halogen-containing gas, said removing with the plasma of the hydrocarbon-containing gas, and said removing with the plasma of the O-containing gas are performed in that order X times, where X is a natural number greater than or equal to 1, or said removing with the plasma of the hydrocarbon-containing gas, said removing with the plasma of the O-containing gas, and said removing with the plasma of the halogen-containing gas are performed in that order X times.
2. The cleaning method of claim 1 further comprising:
removing residues of the metal elements of the groups 14 and 15 with a plasma of an H-containing gas after said removing with the plasma of the halogen-containing gas.
3. The cleaning method of claim 2 further comprising:
removing H, and at least one of F, Cl, Br, and I in the chamber with a plasma of an inert gas after said removing with the plasma of the halogen-containing gas or said removing with the plasma of the H-containing gas.
4. The cleaning method of claim 1 , wherein said removing with the plasma of the hydrocarbon-containing gas and said removing with the plasma of the O-containing gas are performed in that order Y times, wherein Y is a natural number greater than or equal to 1,
such that said removing with the plasma of the halogen-containing gas and the Y performances of said removing with the plasma of the hydrocarbon-containing gas and said removing with the plasma of the O-containing gas are performed in that order X times, or
the Y performances of said removing with the plasma of the hydrocarbon-containing gas and said removing with the plasma of the O-containing gas, and said removing with the plasma of the halogen-containing gas are performed in that order X times.
5. The cleaning method of claim 2 , wherein said removing with the plasma of the hydrocarbon-containing gas and said removing with the plasma of the O-containing gas are performed in that order Y times, where Y is a natural number greater than or equal to 1,
such that said removing with the plasma of the halogen-containing gas, said removing with the plasma of the H-containing gas, and said Y performances of said removing with the plasma of the hydrocarbon-containing gas and said removing with the plasma of the O-containing gas are performed in that order X times, or
the Y performances of said removing with the plasma of the hydrocarbon-containing gas and said removing with the plasma of the O-containing gas, said removing with the plasma of the halogen-containing gas, and said removing with the plasma of the H-containing gas are performed in that order X times.
6. A cleaning method comprising:
removing residues of metal elements of groups 12 and 13 and residues of metal elements of groups 14 and 15 in a chamber with a plasma of a hydrocarbon-containing gas, wherein each of the residues is a residue on a surface of a component of the chamber, and wherein the chamber is a chamber configured for plasma-processing substrates that can be selectively moved into and out of the chamber; and
removing a C-containing material in the chamber with a plasma of an O-containing gas,
wherein said removing with the plasma of the hydrocarbon-containing gas and said removing with the plasma of the O-containing gas are performed in that order X times, where X is a natural number greater than or equal to 1.
7. The cleaning method of claim 1 , wherein the hydrocarbon-containing gas is at least one of CH 4 , C 3 H 8 , C 2 H 4 , C 2 H 2 , and C 2 H 6 .
8. The cleaning method of claim 6 , wherein the hydrocarbon-containing gas is at least one of CH 4 , C 3 H 8 , C 2 H 4 , C 2 H 2 , and C 2 H 6 .
9. The cleaning method of claim 1 , wherein the halogen-containing gas is at least one of NF 3 , SF 6 , CF 4 , Cl 2 , BCl 3 , HBr and HI.