Sacrificial redistribution layer in microelectronic assemblies having direct bonding
Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region and coupled to the first microelectronic component by the first and second direct bonding regions, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, and wherein individual first metal contacts in the first direct bonding region are coupled to respective individual second metal contacts in the second direct bonding region; and a void between an individual first metal contact and a respective individual second metal contact.
1. A microelectronic assembly, comprising:
an interposer having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts;
a microelectronic component having a second direct bonding region, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the microelectronic component is coupled to the interposer by interconnects, and wherein the interconnects include individual first metal contacts in the first direct bonding region coupled to respective individual second metal contacts in the second direct bonding region; and
a void between an individual first metal contact that is not coupled to a respective individual second metal contact, wherein the void is in the second direct bonding region.
2. The microelectronic assembly of claim 1 , wherein a thickness of the void is between 1 nanometer and 10 nanometers.
3. The microelectronic assembly of claim 1 , wherein a thickness of the void is between 10 nanometers and 100 nanometers.
4. The microelectronic assembly of claim 1 , wherein the void is one of a plurality of voids arranged in a repeating pattern.
5. The microelectronic assembly of claim 1 , wherein the void is one of a plurality of voids, and wherein the plurality of voids has a first concentration in a perimeter area of the first and second direct bonding regions and a second concentration that is less than the first concentration in an inner area of the first and second direct bonding regions.
6. The microelectronic assembly of claim 1 , wherein the microelectronic component is a central processing unit, wherein the void is one of a plurality of voids, and wherein a ratio of the plurality of voids to a total number of the first metal contacts is between 1:2 and 1:10.
7. The microelectronic assembly of claim 1 , wherein the microelectronic component is a graphics processing unit, wherein the void is one of a plurality of voids, and wherein a ratio of the plurality of voids to a total number of the first metal contacts is between 1:8 and 1:12.
8. A microelectronic assembly, comprising:
a package substrate;
an interposer coupled to the package substrate at a first surface and having a first direct bonding region at an opposing second surface, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts;
a microelectronic component having a second direct bonding region, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the microelectronic component is coupled to the interposer by interconnects, and wherein the interconnects include individual first metal contacts in the first direct bonding region coupled to respective individual second metal contacts in the second direct bonding region; and
a void between an individual first metal contact that is not coupled to a respective individual second metal contact, wherein the void is in the second direct bonding region.
9. The microelectronic assembly of claim 8 , wherein the void is one of a plurality of voids arranged in a repeating pattern.
10. The microelectronic assembly of claim 8 , wherein the void is one of a plurality of voids and the plurality of voids is distributed uniformly throughout the first and second direct bonding regions.
11. The microelectronic assembly of claim 8 , wherein the first surface of the interposer is coupled to the package substrate by a third direct bonding region.