Direct bonding in microelectronic assemblies
Disclosed herein are microelectronic assemblies including direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region including metal contacts that are distributed non-uniformly. In some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first metal contact and a second metal contact, the first metal contact has a larger area than the second metal contact.
1. A microelectronic assembly, comprising:
a first microelectronic component; and
a second microelectronic component coupled to the first microelectronic component by a direct bonding region including metal contacts that are distributed non-uniformly, wherein:
the direct bonding region includes a first subregion with first metal contacts, a second subregion with second metal contacts, and an area of the first metal contacts is different than an area of the second metal contacts; and
the first subregion includes a first dielectric material, the second subregion includes a second dielectric material, and a material composition of the first dielectric material is different from a material composition of the second dielectric material.
2. The microelectronic assembly of claim 1 , wherein the first dielectric material has a higher thermal conductivity than the second dielectric material.
3. The microelectronic assembly of claim 1 , wherein the first dielectric material includes silicon and nitrogen.
4. The microelectronic assembly of claim 1 , wherein the second dielectric material includes silicon and oxygen.
5. The microelectronic assembly of claim 1 , wherein the first microelectronic component includes an interposer.
6. The microelectronic assembly of claim 1 , wherein the first microelectronic component or the second microelectronic component includes a die.
7. The microelectronic assembly of claim 6 , wherein the die is a dummy die.
8. A microelectronic assembly, comprising:
a first microelectronic component; and
a second microelectronic component coupled to the first microelectronic component by a direct bonding region including metal contacts that are distributed non-uniformly, wherein the direct bonding region includes a first subregion with first metal contacts, a second subregion with second metal contacts, and an area of the first metal contacts is greater than an area of the second metal contacts, wherein:
the first metal contacts and the second metal contacts include copper; and
the first metal contacts and the second metal contacts further include manganese and nickel.
9. The microelectronic assembly of claim 8 , wherein the area of the first metal contacts is rectangular and the area of the second metal contacts is circular.
10. The microelectronic assembly of claim 8 , wherein the first subregion includes a first dielectric material, the second subregion includes a second dielectric material, and a material composition of the first dielectric material is different from a material composition of the second dielectric material.
11. A microelectronic assembly, comprising:
a first microelectronic component; and
a second microelectronic component coupled to the first microelectronic component by a direct bonding region including metal contacts that are distributed non-uniformly, wherein the direct bonding region includes a first subregion with first metal contacts, a second subregion with second metal contacts, and an area of the first metal contacts is greater than an area of the second metal contacts, wherein:
the first metal contacts and the second metal contacts include manganese, titanium, gold, silver, palladium, nickel, aluminum, tantalum, or cobalt; and
the first metal contacts and the second metal contacts include tantalum and nitrogen.
12. The microelectronic assembly of claim 11 , wherein the first metal contacts and the second metal contacts include cobalt and iron.
13. The microelectronic assembly of claim 11 , wherein the first subregion includes a first dielectric material, the second subregion includes a second dielectric material, and a material composition of the first dielectric material is different from a material composition of the second dielectric material.
14. A system, comprising:
a circuit board; and
a microelectronic assembly, communicatively coupled to the circuit board, wherein the microelectronic assembly includes a first microelectronic component coupled to a second microelectronic component by a direct bonding region including metal contacts that are distributed non-uniformly, wherein:
the direct bonding region includes a first subregion with first metal contacts, a second subregion with second metal contacts, and an area of the first metal contacts is different than an area of the second metal contacts; and
the first subregion includes a first dielectric material, the second subregion includes a second dielectric material, and a material composition of the first dielectric material is different from a material composition of the second dielectric material.
15. The system of claim 14 , wherein the circuit board is a motherboard.
16. The system of claim 14 , wherein the microelectronic assembly further includes a display communicatively coupled to the circuit board.