Contact pad for semiconductor device
A device and method of manufacture is provided that utilize a dummy pad feature adjacent contact pads. The contact pads may be contact pads in an integrated fan-out package in which a molding compound is placed along sidewalls of a die and the contact pads extend over the die and the molding compound. The contact pads are electrically coupled to the die using one or more redistribution layers. The dummy pad features are electrically isolated from the contact pads. In some embodiments, the dummy pad features partially encircle the contact pads and are located in a corner region of the molding compound, a corner region of the die, and/or an interface region between an edge of the die and the molding compound.
1. A device comprising:
a substrate;
contact pads over the substrate; and
dummy pad features over the substrate, each of the dummy pad features being adjacent to a corresponding one of the contact pads, each of the dummy pad features being electrically disconnected from the corresponding one of the contact pads, wherein no other conductive material is interposed directly between each of the dummy pad features and the corresponding one of the contact pads.
2. The device of claim 1 , wherein the substrate comprises a semiconductor die and molding compound along sidewalls of the semiconductor die.
3. The device of claim 2 , wherein at least one of the dummy pad features is adjacent an interface between the sidewalls of the semiconductor die and the molding compound in a plan view.
4. The device of claim 1 , further comprising:
a protective layer over the dummy pad features; and
a plurality of under bump metallization features, wherein each of the plurality of under bump metallization features extends through the protective layer to one of the contact pads.
5. The device of claim 4 , wherein the protective layer extends along sidewalls of the dummy pad features and the contact pads.
6. The device of claim 1 , wherein a first set of the contact pads are free of the dummy pad features.
7. The device of claim 1 , wherein a first dummy pad feature of the dummy pad features is adjacent a corner of the substrate in a plan view.
8. A device comprising:
a substrate;
a first contact pad over the substrate; and
a first dummy pad feature adjacent the first contact pad, the first dummy pad feature being electrically isolated from the first contact pad, the first dummy pad feature continuously extending from a first side of the first contact pad to a second side of the first contact pad, wherein the first side and the second side of the first contact pad are on opposing sides of first contact pad.
9. The device of claim 8 , wherein the substrate comprises a semiconductor die and a molding compound along sidewalls of the semiconductor die, further comprising:
a second contact pad over the substrate; and
a second dummy pad feature adjacent the second contact pad, the second dummy pad feature being electrically isolated from the second contact pad, the second dummy pad feature continuously extending from a first side of the second contact pad to a second side of the second contact pad, wherein the first side of the second contact pad and the second side of the second contact pad are on opposing sides of second contact pad, wherein the first contact pad is over the semiconductor die, wherein the second contact pad is over the molding compound.
10. The device of claim 8 , wherein the substrate comprises a semiconductor die and a molding compound along sidewalls of the semiconductor die, further comprising:
a second contact pad over the substrate, wherein the second contact pad is free of a surrounding dummy pad feature, wherein the first contact pad is over the semiconductor die, wherein the second contact pad is over the semiconductor die.
11. The device of claim 8 , wherein the substrate comprises a semiconductor die and a molding compound along sidewalls of the semiconductor die, further comprising:
a second contact pad over the substrate, wherein the second contact pad is free of a surrounding dummy pad feature, wherein the first contact pad is over the semiconductor die, wherein the second contact pad is over the molding compound.
12. The device of claim 8 , wherein the substrate comprises a semiconductor die and a molding compound along sidewalls of the semiconductor die, further comprising:
a second contact pad over the substrate, wherein the second contact pad is free of a surrounding dummy pad feature, wherein the first contact pad is over the molding compound, wherein the second contact pad is over the molding compound.
13. The device of claim 8 , further comprising:
a protective layer over the first dummy pad feature; and
a first under bump metallization feature, wherein the first under bump metallization feature extends through the protective layer to the first contact pad, wherein the first under bump metallization feature overlaps the first dummy pad feature.
14. The device of claim 13 , wherein the first under bump metallization feature overlaps the first dummy pad feature by a distance greater than about 7.5 μm.
15. A device comprising:
a substrate;
a first contact pad over the substrate;
a second contact pad over the substrate; and
a dummy pad feature adjacent the first contact pad, the dummy pad feature being electrically isolated from the first contact pad and the second contact pad, the second contact pad being free of dummy pad features.
16. The device of claim 15 , wherein the first contact pad is closer to a corner of the substrate than the second contact pad.
17. The device of claim 15 , further comprising a conductive line extending from the first contact pad toward a center region of the substrate.
18. The device of claim 15 , wherein the dummy pad feature comprises a partial ring extending around the first contact pad.
19. The device of claim 15 , further comprising:
a protective layer over the dummy pad feature; and
a first under bump metallization feature, wherein the first under bump metallization feature extends through the protective layer to the first contact pad, wherein the first under bump metallization feature overlaps about 50% the dummy pad feature.
20. The device of claim 19 , wherein a width of the dummy pad feature is about 15 μm.