Tap cell, integrated circuit structure and forming method thereof
Provided is a tap cell including a substrate, a first well, a second well, a first doped region, and the second doped region. The substrate has a first region and a second region. The first well has a first dopant type and includes a first portion disposed in the first region and a second portion extending into the second region. The second well has a second dopant type and includes a third portion disposed in the second region and a fourth portion extending into the first region. The first doped region having the first dopant type is disposed in the second portion of the first well and the third portion of the second well along the second region. The second doped region having the second dopant type is disposed in the first portion of the first well and the fourth portion of the second well along the first region.
1. An integrated circuit structure, comprising:
a standard cell and a tap cell adjacent to each other;
a first well having a first dopant type and a second well having a second dopant type continuously extending through the standard cell and the tap cell in an X direction, wherein the first well in the tap cell has a first jog extending into the second well;
a first set of implants having the first dopant type at least disposed in the first jog of the first well to be coupled to a first supply voltage; and
a first active region continuously extending from the first jog of the first well through the tap cell and the standard cell along the X direction.
2. The integrated circuit structure of claim 1 , wherein the second well in the tap cell has a second jog extending into the first well, the second jog of the second well are adjacent to the first jog of the first well.
3. The integrated circuit structure of claim 2 , further comprising:
a second set of implants having the second dopant type at least disposed in the second jog of the second well to be coupled to a second supply voltage different from the first supply voltage.
4. The integrated circuit structure of claim 3 , wherein
the first set of implants continuously extends from the first jog of the first well through the tap cell and the standard cell along the X direction; and
the second set of implants continuously extends from the second jog of the second well through the tap cell and the standard cell along the X direction.
5. The integrated circuit structure of claim 2 , further comprising a second active region continuously extending from the second jog of the second well through the tap cell and the standard cell along the X direction.
6. The integrated circuit structure of claim 5 , wherein
the first jog of the first well extends across a length of the first active region in the Y direction; and
the second jog of the second well extends across a length of the second active region in the Y direction.
7. The integrated circuit structure of claim 1 , further comprising:
a set of gates extending in a Y direction and overlapping the first well and the second well, at least an implant of the first set of implants is between a pair of gates of the set of gates, and being separated from each other in the X direction.
8. The integrated circuit structure of claim 1 , wherein the standard cell comprises a plurality of transistors, the plurality of transistors comprise:
at least one P-type transistor disposed in the first well; and
at least one N-type transistor disposed in the second well.