Semiconductor device, display imaging apparatus, photoelectric conversion apparatus, electronic device, illumination apparatus, and moving body
A semiconductor device includes a first substrate, a semiconductor device includes a first substrate, a color filter layer over the first substrate in an effective pixel region, a second substrate over the color filter layer, a joint member joining the first and second substrates, and a pattern layer over the first substrate outside the effective pixel region. The color filter layer has a color filter material and the pattern layer has the color filter material. In a planar view with respect to a surface of the first substrate on which the joint member is disposed, the pattern layer is disposed between two portions of the joint member, the two portions being separate from and adjacent to each other. In the planar view, the joint member is not disposed between the pattern layer and an end of the first substrate closest to the pattern layer among ends of the first substrate.
1. A semiconductor device comprising:
a first substrate;
a color filter layer over the first substrate in an effective pixel region, the color filter layer having a color filter material;
a second substrate over the color filter layer;
a joint member joining the first and second substrates; and
a pattern layer over the first substrate outside the effective pixel region, the pattern layer having the color filter material,
wherein, in a planar view with respect to a surface of the first substrate on which the joint member is disposed, the pattern layer is disposed between two portions of the joint member, the two portions being separate from and adjacent to each other, and
wherein, in the planar view, the joint member is not disposed between the pattern layer and an end of the first substrate closest to the pattern layer among ends of the first substrate.
2. The semiconductor device according to claim 1 , wherein the two portions of the joint member and the pattern layer are disposed side by side on a straight line parallel to an outer edge of at least a part of the effective pixel region and not passing through the effective pixel region.
3. The semiconductor device according to claim 1 ,
wherein the pattern layer includes layers of a plurality of colors similar to colors of the color filter layer, and
wherein, in the planar view, an area per pattern unit of a certain color of the pattern layer is different in size from an area per pixel of the color of the color filter layer.
4. The semiconductor device according to claim 3 , wherein, in the planar view, the area per pattern unit of the color of the pattern layer is greater than the area per pixel of the color of the color filter layer.
5. The semiconductor device according to claim 3 , wherein, in the planar view, the area per pattern unit of the color of the pattern layer is 1.5 times or more the area per pixel of the color of the color filter layer.
6. The semiconductor device according to claim 1 ,
wherein the pattern layer includes layers of a plurality of colors similar to colors of the color filter layer, and
wherein the pattern layer has a pattern in which, in the planar view, a shape of a layer of a certain color among the layers of the plurality of colors is different from a shape per pixel of a layer of the certain color of the color filter layer.
7. The semiconductor device according to claim 1 , wherein, in the planar view, the color filter layer and the pattern layer are separate from each other.
8. The semiconductor device according to claim 1 , wherein, in the planar view, a distance between the joint member and the pattern layer is greater than a distance between an end of the first substrate and the pattern layer.
9. The semiconductor device according to claim 1 , wherein a layer of a same color as at least one of colors of layers included in the color filter layer is disposed between the color filter layer and the joint member.
10. The semiconductor device according to claim 9 , wherein a part of the layer of the at least one color is disposed between the color filter layer and the pattern layer.
11. The semiconductor device according to claim 9 , wherein, in the planar view, the layer of the at least one color and the pattern layer are separate from each other.
12. The semiconductor device according to claim 1 , wherein the effective pixel region includes a plurality of pixels, and at least one of the plurality of pixels includes an organic light-emitting element and a transistor connected to the organic light-emitting element.
13. A display imaging apparatus comprising:
an imaging apparatus; and
the semiconductor device according to claim 1 as a display unit,
wherein a display image on the display unit is controlled based on information about line-of-sight of a user, the information being provided by the imaging apparatus.
14. A photoelectric conversion apparatus comprising:
an optical unit including a plurality of lenses;
an imaging element configured to receive light having passed through the optical unit; and
a display unit configured to display an image captured by the imaging element,
wherein the display unit includes the semiconductor device according to claim 1 .
15. An electronic device comprising:
a display unit including the semiconductor device according to claim 1 ;
a housing in which the display unit is provided; and
a communication unit provided in the housing and configured to communicate with outside.
16. An illumination apparatus comprising:
a light source including the semiconductor device according to claim 1 ; and
a light diffusion portion or an optical film through which light emitted from the light source is transmitted.
17. A moving object comprising:
a lamp fitting including the semiconductor device according to claim 1 ; and
a body in which the lamp fitting is provided.
18. A semiconductor device comprising:
a first substrate;
a color filter layer over the first substrate in an effective pixel region, the color filter layer having a color filter material;
a second substrate over the color filter layer;
a joint member on the first substrate along an outer edge of the effective pixel region, the joint member joining the first substrate and the second substrate; and
a pattern layer over the first substrate outside the effective pixel region, the pattern layer having the color filter material,
wherein, in a planar view with respect to a surface of the first substrate on which the joint member is disposed, the joint member includes two portions separate from and adjacent to each other,
wherein, in the planar view, a virtual straight line connecting the two portions of the joint member and the joint member surround the effective pixel region, and
wherein the pattern layer is disposed over the virtual straight line.
19. The semiconductor device according to claim 18 ,
wherein the pattern layer includes layers of a plurality of colors similar to colors of the color filter layer, and
wherein, in the planar view, an area per pattern unit of a certain color of the pattern layer is different in size from an area per pixel of the color of the color filter layer.
20. The semiconductor device according to claim 18 ,
wherein the pattern layer includes layers of a plurality of colors similar to colors of the color filter layer, and
wherein the pattern layer has a pattern in which, in the planar view, a shape of a layer of a certain color among the layers of the plurality of colors is different from a shape per pixel of a layer of the certain color of the color filter layer.