Vertical transport CMOS transistors with asymmetric threshold voltage
A semiconductor structure for triggering asymmetric threshold voltage along a channel of a vertical transport field effect transistor (VTFET) is provided. The semiconductor structure includes a first set of fins including a SiGe layer and a first material layer formed on the SiGe layer, a second set of fins including the SiGe layer and a second material layer formed on the SiGe layer, a first high-κ metal gate disposed over the first set of fins, and a second high-κ metal gate disposed over the second set of fins. An asymmetric threshold voltage is present along the channel of the VTFET in a region defined at a bottom of the first and second set of fins, and a Ge content of the second material layer is higher than a Ge content of the SiGe layer.
1. A semiconductor structure for triggering asymmetric threshold voltage along a channel of a vertical transport field effect transistor (VTFET), the semiconductor structure comprising:
a first set of fins, each of the first set of fins including a low germanium content layer and a first material layer formed on the low germanium content layer, the low germanium content layer including SiGe with a Ge content of ≤20%, and the first material layer is comprised of Si or a carbon doped Si material;
a second set of fins adjacent to the first set of fins, each of the second set of fins including the low germanium content layer and a high germanium content layer formed on the low germanium content layer for each of the second set of fins, the high germanium content layer including SiGe with a Ge content of ≥40%;
a first high-κ metal gate disposed over the first set of fins; and
a second high-κ metal gate disposed over the second set of fins,
wherein an asymmetric threshold voltage is present along the channel of the VTFET in a region defined at a bottom of the first set of fins and the second set of fins.
2. The semiconductor structure of claim 1 , wherein the low germanium content layer has a length in a vertical extending direction of the first set of fins that is 20-50% of a total channel length of the semiconductor structure in the vertical extending direction.
3. The semiconductor structure of claim 1 , wherein the second high-κ metal gate is composed of different materials than the first high-κ metal gate.
4. The semiconductor structure of claim 1 , wherein a shallow trench isolation (STI) region separates a bottom source region from a bottom drain region.
5. The semiconductor structure of claim 4 , wherein top source/drain regions are disposed over exposed top portions of the first set of fins and the second set of fins.
6. The semiconductor structure of claim 5 , wherein a metal fill is disposed over the top source/drain regions.
7. The semiconductor structure of claim 6 , wherein a bottom spacer is disposed between the first high-κ metal gate and the bottom source and drain regions.
8. A method of fabricating a semiconductor structure for triggering asymmetric threshold voltage along a channel of a vertical transport field effect transistor (VTFET), the method comprising:
forming a first set of fins, each of the first set of fins including a low germanium content layer and forming a first material layer on the low germanium content layer, the low germanium content layer including SiGe with a Ge content of ≤20%, and the first material layer is comprised of Si or a carbon doped Si material;
forming a second set of fins adjacent to the first set of fins, each of the second set of fins including the low germanium content layer and forming a high germanium content layer on the low germanium content layer for each of the second set of fins, the high germanium content layer including SiGe with a Ge content of ≥40%;
forming a first high-κ metal gate over the first set of fins; and
forming a second high-κ metal gate over the second set of fins,
wherein an asymmetric threshold voltage is present along the channel of the VTFET in a region defined at a bottom of the first set of fins and the second set of fins.
9. The method of claim 8 , wherein the low germanium content layer has a length in a vertical extending direction of the first set of fins that is 20-50% of a total channel length of the semiconductor structure in the vertical extending direction.
10. The method of claim 8 , wherein the second high-κ metal gate is composed of different materials than the first high-κ metal gate.
11. The method of claim 8 , wherein a shallow trench isolation (STI) region separates a bottom source region from a bottom drain region.
12. The method of claim 11 , further comprising forming top source/drain regions over exposed top portions of the first set of fins and the second set of fins.
13. The method of claim 12 , further comprising forming a metal fill over the top source/drain regions.
14. The method of claim 13 , further comprising forming a bottom spacer between the first high-κ metal gate and the bottom source and drain regions.