Semiconductor device and manufacturing method thereof
A semiconductor device with a high on-state current is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, a first insulator over the third oxide, a conductor over the first insulator, a second insulator in contact with the second oxide and the third oxide, and a third insulator over the second insulator; the second oxide includes first region to fifth regions; the resistance of the first region and the resistance of the second region are lower than the resistance of the third region; the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region; and the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region.
1. A semiconductor device comprising:
a first oxide;
a second oxide over the first oxide;
a third oxide over the second oxide;
a first insulator over the third oxide;
a conductor over the first insulator;
a second insulator in contact with part of a top surface of the second oxide, part of a side surface of the second oxide, and part of a side surface of the third oxide;
a third insulator over the second insulator; and
a fourth insulator in contact with a top surface of the third oxide, a top surface of the first insulator, a top surface of the conductor, and a top surface of the third insulator,
wherein the second oxide includes a first region, a second region, a third region between the first region and the second region, a fourth region between the first region and the third region, and a fifth region between the second region and the third region,
wherein the resistance of the first region and the resistance of the second region are lower than the resistance of the third region,
wherein the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region,
wherein the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region,
wherein part of the third oxide and part of the first insulator are provided between a side surface of the conductor and a side surface of the third insulator, and
wherein the second insulator is in contact with the first region and the second region.
2. The semiconductor device according to claim 1 ,
wherein the conductor overlaps with at least part of the first region and part of the second region.
3. The semiconductor device according to claim 1 , further comprising a fifth insulator in contact with a top surface of the second insulator,
wherein the fifth insulator is in contact with a bottom surface of the third insulator and the side surface of the third oxide.
4. The semiconductor device according to claim 1 ,
wherein the first region, the second region, the fourth region, and the fifth region contain one of phosphorus or boron.
5. The semiconductor device according to claim 4 ,
wherein the first region and the second region contain phosphorus or boron more than the fourth region and the fifth region.
6. The semiconductor device according to claim 1 ,
wherein the first region, the second region, the fourth region, and the fifth region contain more oxygen vacancies than the third region.
7. The semiconductor device according to claim 1 ,
wherein the first region, the second region, the fourth region, and the fifth region contain more hydrogen than the third region.
8. A semiconductor device comprising:
a first oxide;
a second oxide over the first oxide;
a third oxide over the second oxide;
a first insulator over the third oxide;
a conductor over the first insulator;
a second insulator in contact with part of a top surface of the second oxide, part of a side surface of the second oxide, and part of a side surface of the third oxide;
a third insulator over the second insulator; and
a fourth insulator in contact with a top surface of the third oxide, a top surface of the first insulator, a top surface of the conductor, and a top surface of the third insulator,
wherein the second oxide includes a first region, a second region, a third region between the first region and the second region, a fourth region between the first region and the third region, and a fifth region between the second region and the third region,
wherein the first region, the second region, the fourth region, and the fifth region contain a dopant,
wherein the first region and the second region have a higher dopant concentration than the fourth region and the fifth region,
wherein the conductor overlaps with the third region, the fourth region, and the fifth region,
wherein part of the third oxide and part of the first insulator are provided between a side surface of the conductor and a side surface of the third insulator, and
wherein the second insulator is in contact with the first region and the second region.
9. The semiconductor device according to claim 8 ,
wherein the conductor overlaps with at least part of the first region and part of the second region.
10. The semiconductor device according to claim 8 , further comprising a fifth insulator in contact with a top surface of the second insulator,
wherein the fifth insulator is in contact with a bottom surface of the third insulator and the side surface of the third oxide.
11. The semiconductor device according to claim 8 ,
wherein the first region, the second region, the fourth region, and the fifth region contain one of phosphorus or boron.
12. The semiconductor device according to claim 11 ,
wherein the first region and the second region contain phosphorus or boron more than the fourth region and the fifth region.
13. The semiconductor device according to claim 8 ,
wherein the first region, the second region, the fourth region, and the fifth region contain more oxygen vacancies than the third region.
14. The semiconductor device according to claim 8 ,
wherein the first region, the second region, the fourth region, and the fifth region contain more hydrogen than the third region.