Semiconductor device
A semiconductor device includes a first electrode, a second electrode, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type; a third semiconductor layer of the first conductivity type; a first active region; and a third electrode. The first semiconductor layer is located between the first electrode and the second electrode. The second semiconductor layer is located above the first semiconductor layer. The first active region is next to the second semiconductor layer in a second direction. The first active region includes a first upper portion and a first upper portion. An average value of a width in the second direction of the first lower portion is greater than an average value of a width in the second direction of the first upper portion. The third semiconductor layer is electrically connected with the second electrode.
1. A semiconductor device, comprising:
a first electrode;
a second electrode;
a first semiconductor layer located between the first electrode and the second electrode, the first semiconductor layer being of a first conductivity type;
a second semiconductor layer located between the first semiconductor layer and the second electrode, the second semiconductor layer being of a second conductivity type;
a first active region next to the second semiconductor layer in a second direction orthogonal to a first direction, the first direction being from the first electrode toward the second electrode, the first active region including
a first upper portion positioned between the first semiconductor layer and the second electrode, and
a first lower portion positioned between the first semiconductor layer and the first upper portion, an average value of a width in the second direction of the first lower portion being greater than an average value of a width in the second direction of the first upper portion;
a third semiconductor layer located between the second semiconductor layer and the second electrode, the third semiconductor layer being of the first conductivity type and being electrically connected with the second electrode; and
a third electrode located, with an insulating film and an insulating layer interposed, between the second electrode and the first active region and between the second electrode and the second and third semiconductor layers.
2. The device according to claim 1 , wherein
a width of an upper surface of the first active region contacting the insulating film is less than the average value of the width of the first upper portion.
3. The device according to claim 1 , wherein
a width of an upper surface of the first active region contacting the insulating film is less than a width of an internal boundary between the first upper portion and the first lower portion.
4. The device according to claim 1 , wherein
the first semiconductor layer further includes a first region positioned under the first active region and the second semiconductor layer,
an upper surface of the first region contacts lower surfaces of the first active region and the second semiconductor layer, and
a width of an upper surface of the first active region contacting the insulating film is less than a width of a first boundary between the first active region and the first region.
5. The device according to claim 1 , further comprising:
a second active region located between the first region and the second electrode, the second active region contacting the second electrode and being next to the second semiconductor layer in a direction opposite to the second direction.
6. The device according to claim 5 , wherein
the second active region includes a second upper portion and a second lower portion,
the second upper portion contacts the second electrode,
the second lower portion is positioned between the first region and the second upper portion, and
an average value of a width in the second direction of the second lower portion is greater than an average value of a width in the second direction of the second upper portion.
7. The device according to claim 6 , wherein
a width of a second boundary between the second active region and the first region is greater than the average value of the width of the second lower portion.
8. The device according to claim 6 , wherein
a width of a second boundary between the second active region and the first region is greater than a width of an internal boundary between the second upper portion and the second lower portion.
9. A semiconductor device, comprising:
a first electrode;
a second electrode;
a first semiconductor layer located between the first electrode and the second electrode, the first semiconductor layer being of a first conductivity type;
a second semiconductor layer located between the first semiconductor layer and the second electrode, the second semiconductor layer being of a second conductivity type; and
an active region next to the second semiconductor layer in a second direction orthogonal to a first direction, the first direction being from the first electrode toward the second electrode, the active region including
an upper portion located between the first semiconductor layer and the second electrode, the upper portion contacting the second electrode, and
a lower portion positioned between the first semiconductor layer and the upper portion, an average value of a width in the second direction of the lower portion being greater than an average value of a width in the second direction of the upper portion.