Manufacturing method of flexible electronic substrate and substrate structure
View Patent ↗A manufacturing method of a flexible electronic substrate and a substrate structure are disclosed. The manufacturing method includes: providing a first substrate comprising a first surface and a second surface which are opposite; forming a separation layer on the first surface of the first substrate, the separation layer being in a film form; providing a second substrate on the separation layer, the second substrate being configured as a flexible substrate; and processing the separation layer, such that at least a part of the separation layer is cracked from the film form, thereby separating the second substrate from the first substrate.
1. A manufacturing method of a flexible electronic substrate, comprising:
providing a first substrate comprising a first surface and a second surface which are opposite;
forming a separation layer on the first surface of the first substrate, wherein the separation layer is in a film form;
providing a second substrate on the separation layer, wherein the second substrate is configured as a flexible substrate; and
processing the separation layer, such that at least a part of the separation layer is cracked from the film form, thereby separating the second substrate from the first substrate,
wherein the second substrate comprises a third surface and a fourth surface which are opposite, the third surface is closer to the first substrate, and
the manufacturing method further comprises: manufacturing a first operation circuit on the fourth surface of the second substrate before processing the separation layer, and manufacturing a second operation circuit on the second surface of the first substrate before processing the separation layer.
2. The manufacturing method according to claim 1 , wherein the processing action is physical processing.
3. The manufacturing method according to claim 1 , wherein cracking of at least a part of the separation layer from the film form comprises:
changing at least a part of the separation layer from the film form into a powder form.
4. The manufacturing method according to claim 1 , wherein the processing action comprises a cooling processing action.
5. The manufacturing method according to claim 1 , wherein the separation layer comprises one or more selected from the group consisting of tin and a tin alloy.
6. The manufacturing method according to claim 5 , wherein the processing action comprises a cooling processing action, and the cooling processing action comprises cooling the separation layer below 13.2 degrees Celsius.
7. The manufacturing method according to claim 5 , wherein the processing action comprises making a nucleating agent come into contact with the separation layer to crack the separation layer.
8. The manufacturing method according to claim 7 , wherein the nucleating agent comprises one or more selected from the group consisting of gray tin, cadmium telluride and indium antimonide.
9. The manufacturing method according to claim 5 , wherein an alloying element in the tin alloy comprises, in addition to tin, one or more selected from the group consisting of aluminum, copper, magnesium, manganese, zinc, bismuth, lead, antimony, silver, gold and germanium.
10. The manufacturing method according to claim 9 , wherein the tin element in the separation layer has a mass percentage of at least 30%.
11. The manufacturing method according to claim 5 , wherein cracking of the separation layer from the film form comprises:
transforming the tin from white tin to gray tin.
12. The manufacturing method according to claim 1 , wherein the separation layer comprises a groove structure or a hollow structure.
13. The manufacturing method according to claim 12 , wherein the groove structure or the hollow structure has an area percentage of 10% to 50%.
14. The manufacturing method according to claim 12 , wherein a planar structure of the groove structure or the hollow structure has a shape of circle, rhombus, rectangle, triangle or irregular polygon.