Faceplate having a curved surface
A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.
1. A faceplate for a process chamber, the faceplate comprising:
a circular mounting ring configured to mount the faceplate within the process chamber;
a plurality of apertures;
a first surface; and
a second surface opposite the first surface, configured to be exposed to a processing volume of the process chamber, and including a first peak aligned with a vertical centerline of the faceplate,
wherein a distance between the first surface and the second surface varies,
wherein the faceplate is comprised of a conductive material, and
wherein the first peak is symmetric with respect to the vertical centerline of the faceplate and continuous to a plane of the most distal end of the faceplate.
2. The faceplate of claim 1 , wherein the second surface further includes a curved region having an increasing slope converging at the first peak.
3. The faceplate of claim 2 , wherein a slope of the second surface between the curved region and the first peak decreases.
4. The faceplate of claim 1 , wherein the second surface further includes:
a linear region having a positive slope; and
a curved region between the linear region and the first peak and having an increasing slope.
5. The faceplate of claim 1 , wherein a height of the first peak is in a range of about 10 mils to about 20 mils.
6. The faceplate of claim 1 , the second surface further includes a second peak.
7. The faceplate of claim 6 , wherein a height of the first peak is larger than a height of the second peak.
8. A lid assembly for a process chamber, the lid assembly comprising:
a gas box;
a gas conduit passing through the gas box;
a blocker plate coupled to the gas box; and
a faceplate coupled to the blocker plate, the faceplate comprising:
a circular mounting ring configured to mount the faceplate within the lid assembly;
a plurality of apertures;
a first surface parallel to the blocker plate; and
a second surface opposite the first surface, configured to be exposed to a processing volume of the process chamber, and including a first peak aligned with a vertical centerline of the faceplate,
wherein a distance between the first surface and the second surface varies,
wherein the faceplate is comprised of a conductive material, and
wherein the first peak is symmetric with respect to the vertical centerline of the faceplate and continuous to a plane of the most distal end of the faceplate.
9. The lid assembly of claim 8 , wherein the second surface further includes a curved region having an increasing slope converging at the first peak, wherein a slope between curved region and the first peak decreases and a slope of the second surface proximate the circular mounting ring is zero.
10. The lid assembly of claim 8 , wherein the second surface further includes:
a linear region having a positive slope; and
a curved region between the linear region and the first peak and having an increasing slope.
11. The lid assembly of claim 8 , the second surface further includes a second peak.
12. The lid assembly of claim 11 , wherein a height of the first peak is larger than a height of the second peak.
13. The lid assembly of claim 8 , wherein a height of the first peak is in a range of about 10 mils to about 20 mils.
14. The lid assembly of claim 8 , wherein a distance between the second surface and the blocker plate varies.
15. A process chamber comprising:
a substrate support assembly disposed within a processing volume of the process chamber;
a chamber wall; and
a lid assembly coupled to the chamber wall, the lid assembly comprising:
a blocker plate; and
a faceplate coupled to the blocker plate, the faceplate comprising:
a circular mounting ring configured to mount the faceplate within the lid assembly;
a plurality of apertures;
a first surface parallel to the blocker plate; and
a second surface opposite the first surface, configured to be exposed to the processing volume of the process chamber, and including a first peak aligned with a vertical centerline of the faceplate,
wherein a distance between the first surface and the second surface varies across width,
wherein the faceplate is comprised of a conductive material, and
wherein the first peak is symmetric with respect to the vertical centerline of the faceplate and continuous to a plane of the most distal end of the faceplate.
16. The process chamber of claim 15 , wherein the second surface further includes a curved region having an increasing slope converging at the first peak, wherein a slope between curved region and the first peak decreases and a slope of the second surface proximate the circular mounting ring is zero.
17. The process chamber of claim 15 , wherein the second surface further includes:
a linear region having a positive slope; and
a curved region between the linear region and the first peak and having an increasing slope.
18. The process chamber of claim 15 , wherein the second surface further includes a second peak.
19. The process chamber of claim 18 , wherein a height of the first peak is larger than a height of the second peak.
20. The process chamber of claim 15 , wherein a height of the first peak is in a range of about 10 mils to about 20 mils.