Inorganic ternary halide semiconductors for hard radiation detection
Methods and devices for detecting incident radiation, such as incident X-rays, gamma-rays, and/or alpha particle radiation are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds, including solid solutions, having the formula AB 2 X 5 , where A represents Tl or In, B represents Sn or Pb, and X represents Br or I, as photoelectric materials.
1. A method for detecting incident radiation, the method comprising:
exposing a material comprising an inorganic semiconductor having the formula AB 2 X 5 , where A represents In, B represents Sn, Pb, or a combination thereof, and X represents Br, I, or a combination thereof, to incident gamma radiation, x-ray radiation, alpha particle radiation, or a combination thereof, wherein the material absorbs the incident radiation and electron-hole pairs are generated in the material; and
measuring at least one of the energy or intensity of the absorbed incident radiation by detecting the generated electrons, holes, or both.
2. A method for detecting incident radiation, the method comprising:
exposing a material comprising an inorganic semiconductor having the formula AB 2 X 5 , where A represents Tl, In, or a combination thereof, B represents Sn, and X represents Br, I, or a combination thereof, to incident gamma radiation, x-ray radiation, alpha particle radiation, or a combination thereof, wherein the material absorbs the incident radiation and electron-hole pairs are generated in the material; and
measuring at least one of the energy or intensity of the absorbed incident radiation by detecting the generated electrons, holes, or both.
3. The method of claim 2 , wherein the inorganic semiconductor has the formula TlSn 2 I 5 .
4. A device for the detection of incident radiation comprising:
a material comprising an inorganic semiconductor having the formula AB 2 X 5 or solid solution having the formula AB 2 X 5 , where A represents In, B represents Sn, Pb, or a combination thereof, and X represents Br, I, or a combination thereof;
a first electrode in electrical communication with the material;
a second electrode in electrical communication with the material, wherein the first and second electrodes are configured to apply an electric field across the material; and
a detector configured to measure a signal generated by electron-hole pairs that are formed when the material is exposed to incident gamma radiation, x-ray radiation, alpha particle radiation, or a combination thereof.
5. A device for the detection of incident radiation comprising:
a material comprising an inorganic semiconductor having the formula AB 2 X 5 or solid solution having the formula AB 2 X 5 , where A represents Tl, In, or a combination thereof, B represents Sn, and X represents Br, I, or a combination thereof;
a first electrode in electrical communication with the material;
a second electrode in electrical communication with the material, wherein the first and second electrodes are configured to apply an electric field across the material; and
a detector configured to measure a signal generated by electron-hole pairs that are formed when the material is exposed to incident gamma radiation, x-ray radiation, alpha particle radiation, or a combination thereof.
6. The device of claim 5 , wherein the inorganic semiconductor is TlSn 2 I 5 .