Field effect transistor including channel formed of 2D material
A field effect transistor includes a substrate, a source electrode and a drain electrode on the substrate and apart from each other in a first direction, a plurality of channel layers, a gate insulating film surrounding each of the plurality of channel layers, and a gate electrode surrounding the gate insulating film. Each of the plurality of channel layers has ends contacting the source electrode and the drain electrode. The plurality of channel layers are spaced apart from each other in a second direction away from the substrate. The plurality of channel layers include a 2D semiconductor material.
1. A field effect transistor comprising:
a substrate;
a source electrode and a drain electrode on the substrate and apart from each other in a first direction;
a plurality of channel layers on the substrate, each of the plurality of channel layers having both ends contacting the source electrode and the drain electrode, the plurality of channel layers being apart from each other in a second direction away from the substrate, and the plurality of channel layers comprising a 2D semiconductor material;
a gate insulating film surrounding each of the plurality of channel layers; and
a gate electrode surrounding the gate insulating film,
wherein the 2D semiconductor material comprises a transition metal dichalcogenide,
a thickness in the second direction of at least one of the plurality of channel layers is greater than 0 nm and less than or equal to about 1 nm, and
a length in the first direction of at least one of the plurality of channel layers is greater than 0 nm and less than or equal to about 3 nm.
2. The field effect transistor of claim 1 , wherein each of the plurality of channel layers comprises two edges extending in a third direction perpendicular to the first direction and the second direction, the two edges respectively contacting the source electrode and the drain electrode.
3. The field effect transistor of claim 1 , wherein each of the plurality of channel layers comprises two contact areas in planar contact with the source electrode and the drain electrode.
4. The field effect transistor of claim 1 , wherein the plurality of channel layers comprise a first channel layer and a second channel layer having different lengths in the first direction.
5. The field effect transistor of claim 4 , wherein the first channel layer and the second channel layer are arranged on the substrate in order of length in the first direction decreasing.
6. The field effect transistor of claim 4 , wherein the first channel layer and the second channel layer have different thicknesses from each other.
7. The field effect transistor of claim 4 , wherein the first channel layer and the second channel layer have different lengths in a third direction perpendicular to each of the first direction and the second direction.
8. The field effect transistor of claim 7 , wherein the first channel layer and the second channel layer are arranged on the substrate in order of length in the third direction decreasing.
9. The field effect transistor of claim 1 , wherein the gate insulating film contacts the plurality of channel layers and has a shape surrounding each of the plurality of channel layers in a closed path with an axis in the first direction.
10. The field effect transistor of claim 9 , wherein the gate electrode is apart from the plurality of channel layers and has a shape surrounding each of the plurality of channel layers in a closed path with an axis in the first direction.
11. The field effect transistor of claim 9 , wherein the gate insulating film has a shape of extending to an area between the gate electrode and the source electrode and an area between the gate electrode and the drain electrode.
12. The field effect transistor of claim 1 , wherein
the transition metal dichalcogenide comprises a metal element and a chalcogen element,
the metal element includes Mo, W, Nb, V, Ta, Ti, Zr, Hf, Tc, Re, Cu, Ga, In, Sn, Ge, Pb, or a combination thereof, and
the chalcogen element includes S, Se, Te, or a combination thereof.
13. The field effect transistor of claim 1 , wherein the 2D semiconductor material is doped with a conductive dopant.
14. The field effect transistor of claim 1 , wherein the plurality of channel layers comprise a same 2D semiconductor material.
15. The field effect transistor of claim 1 , wherein the gate insulating film comprises a high-k dielectric material or a ferroelectric material.
16. The field effect transistor of claim 1 , wherein
a length of the channel layer in the first direction is set to a minimum length determined by a thickness of the channel layer in the second direction.
17. The field effect transistor of claim 1 , wherein a thickness of at least one of the plurality of channel layers in the second direction is greater than 0 nm and less than or equal to about 5 nm.