Dielectric composition and multilayered electronic component comprising the same

1. A dielectric composition, comprising:

a main ingredient having a perovskite structure represented by ABO 3 , where A is at least one selected from the group consisting of barium (Ba), strontium (Sr), and calcium (Ca) and B is at least one selected from the group consisting of titanium (Ti), zirconium (Zr), and hafnium (Hf), and a first accessory ingredient,

wherein the first accessory ingredient comprises 0.1 mole or more of a rare earth element, 0.02 mole or more of niobium (Nb), and 0.25 mole or more and 0.9 mole or less of magnesium (Mg), based on 100 mole of the main ingredient,

wherein a sum of contents of the rare earth element and Nb is 1.5 mole or less, based on 100 mole of the main ingredient, and

wherein the rare earth element is dysprosium (Dy).

2. The dielectric composition of claim 1 , wherein the first accessory ingredient comprises 0.25 mole or more and 0.7 mole or less of Mg, based on 100 mole of the main ingredient.

3. The dielectric composition of claim 1 , wherein the dielectric composition comprises 0.1 to 2.0 mole of oxides or carbonates including at least one selected from the group consisting of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), nickel (Ni), cobalt (Co), copper (Cu), and zinc (Zn), based on 100 mole of the main ingredient, as a second accessory ingredient.

4. The dielectric composition of claim 1 , wherein the dielectric composition comprises 0.001 to 0.5 mole of an oxide including at least one of silicon (Si) or aluminum (Al), or a glass compound including Si, based on 100 mole of the main ingredient, as a third accessory ingredient.

5. The dielectric composition of claim 1 , wherein the main ingredient is BaTiO 3 .

6. A multilayer electronic component, comprising:

a body including a dielectric layer and an internal electrode; and

an external electrode disposed on the body and connected to the internal electrode,

wherein the dielectric layer comprises a dielectric composition,

wherein the dielectric composition comprises a main ingredient having a perovskite structure represented by ABO 3 , where A is at least one of barium (Ba), strontium (Sr), and calcium (Ca) and B is at least one of titanium (Ti), zirconium (Zr), and hafnium (Hf), and a first accessory ingredient,

wherein the first accessory ingredient comprises 0.1 mole or more of a rare earth element, 0.02 mole or more of niobium (Nb), and 0.25 mole or more and 0.9 mole or less of magnesium (Mg), and a sum of contents of the rare earth element and Nb is 1.5 mole or less, based on 100 mole of the main ingredient,

wherein the rare earth element is dysprosium (Dy).

7. The multilayer electronic component of claim 6 , wherein the first accessory ingredient comprises 0.25 mole or more and 0.7 mole or less of Mg, based on 100 mole of the main ingredient.

8. The multilayer electronic component of claim 6 , wherein the dielectric composition comprises 0.1 to 2.0 mole of oxides or carbonates including at least one selected from the group consisting of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), nickel (Ni), cobalt (Co), copper (Cu) and zinc (Zn), based on 100 mole of the main ingredient, as a second accessory ingredient.

9. The multilayer electronic component of claim 6 , wherein the dielectric composition comprises 0.001 to 0.5 mole of an oxide including at least one of Si and Al and a glass compound including Si, based on 100 mole of the main ingredient, as a third accessory ingredient.

10. The multilayer electronic component of claim 6 , wherein the dielectric layer has an average thickness of 0.41 μm or less, and the internal electrode has an average thickness of 0.41 μm or less.

11. The multilayer electronic component of claim 6 , wherein a size of the multilayer electronic component is 1005 (length×width, 1.0 mm×0.5 mm) or less.

12. The multilayer electronic component of claim 6 , wherein the dielectric layer comprises a plurality of crystal grains and grain boundaries disposed between adjacent crystal grains, and the Nb is included in the plurality of crystal grains and the grain boundaries.

13. The multilayer electronic component of claim 6 , wherein the dielectric layer comprises a plurality of crystal grains and a grain boundary disposed between adjacent crystal grains, and an average grain size of the crystal grains is 200 nm or less.

14. A dielectric composition, comprising:

a main ingredient having a perovskite structure represented by ABO 3 , where A is at least one selected from the group consisting of barium (Ba), strontium (Sr), and calcium (Ca) and B is at least one selected from the group consisting of titanium (Ti), zirconium (Zr), and hafnium (Hf), and a first accessory ingredient,

wherein the first accessory ingredient comprises 0.1 mole or more of a rare earth element, 0.02 mole or more of niobium (Nb), and 0.25 mole or more and 0.7 mole or less of magnesium (Mg), based on 100 mole of the main ingredient,

wherein a sum of contents of the rare earth element and Nb is 1.5 mole or less, based on 100 mole of the main ingredient.

15. The dielectric composition of claim 14 , wherein the rare earth element is dysprosium (Dy) or a rare earth element having a smaller ionic radius than that of Dy.

16. The dielectric composition of claim 14 , wherein the dielectric composition comprises 0.1 to 2.0 mole of oxides or carbonates including at least one selected from the group consisting of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), nickel (Ni), cobalt (Co), copper (Cu), and zinc (Zn), based on 100 mole of the main ingredient, as a second accessory ingredient.

17. The dielectric composition of claim 14 , wherein the dielectric composition comprises 0.001 to 0.5 mole of an oxide including at least one of silicon (Si) or aluminum (Al), or a glass compound including Si, based on 100 mole of the main ingredient, as a third accessory ingredient.

18. The dielectric composition of claim 14 , wherein the main ingredient is BaTiO 3 , and the rare earth element is Dy.