IP Library › Granted Patent US 11,539,291
Granted Patent B2
US 11,539,291 · App. 17/074,759 · Granted Dec 27, 2022

Method of manufacturing a power semiconductor system

Inventors: Petteri Palm (Regensburg, DE); Frank Daeche (Unterhaching, DE); Zeeshan Umar (Munich, DE); Andrew Sawle (East Grinstead, GB); Maciej Wojnowski (Munich, DE); Xaver Schloegel (Sachsenkam, DE); Josef Hoeglauer (Heimstetten, DE)
Assignee: Infineon Technologies Austria AG
H02M3/155H01F17/0033H01F17/062H01F27/255H01F41/046H02M3/158H01F2027/065H02M1/0048H02M1/0054Y10T29/4913
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Quick Facts
Patent No.
US 11,539,291
App. No.
17/074,759
Granted
Dec 27, 2022
Kind
B2
Abstract

A method of manufacturing a power semiconductor system includes providing a power module having one or more power transistor dies and attaching an inductor module to the power module such that the inductor module is electrically connected to a node of the power module. The inductor module includes a substrate with a magnetic material and windings at one or more sides of the substrate. Further methods of manufacturing power semiconductor systems and methods of manufacturing inductor modules are also described.

Claims (22)

1. A method of manufacturing a power semiconductor system, the method comprising:

providing a power module comprising one or more power transistor dies; and

attaching an inductor module to the power module such that the inductor module is electrically connected to a node of the power module, the inductor module comprising a substrate,

wherein the substrate comprises an insulating material in which a magnetic material is embedded, and first and second metal sheets laminated onto the insulating material over opposite sides of the magnetic material,

wherein windings are formed by metal traces patterned into the first and second metal sheets.

2. The method of claim 1 , wherein attaching the inductor module to the power module comprises soldering the inductor module to the power module.

3. The method of claim 1 , wherein attaching the inductor module to the power module comprises laminating the inductor module onto the power module.

4. The method of claim 1 , wherein the windings of the inductor module comprise copper.

5. A method of manufacturing a power semiconductor system, the method comprising:

providing a power module comprising one or more power transistor dies; and

attaching an inductor module to the power module such that the inductor module is electrically connected to a node of the power module, the inductor module comprising a substrate,

wherein the substrate comprises an insulating material in which a magnetic material is embedded, and first and second metal sheets laminated onto the insulating material over opposite sides of the magnetic material,

wherein windings are formed by metal traces patterned into the first and second metal sheets,

wherein the magnetic material has a plurality of elongated openings,

wherein a first group of electrically conductive vias passes through a first one of the elongated openings and a second group of electrically conductive vias passes through a second one of the elongated openings to connect the metal traces and form one or more coils.

6. A method of manufacturing a power semiconductor system, the method comprising:

providing a power module comprising one or more power transistor dies; and

attaching an inductor module to the power module such that the inductor module is electrically connected to a node of the power module, the inductor module comprising a substrate,

wherein the substrate comprises an insulating material in which a magnetic material is embedded, and first and second metal sheets laminated onto the insulating material over opposite sides of the magnetic material,

wherein windings are formed by metal traces patterned into the first and second metal sheets,

wherein the magnetic material is patterned into an elongated toroid,

wherein a first group of electrically conductive vias extends along a first outer elongated side of the toroid, a second group of electrically conductive vias extends along a first inner elongated side of the toroid, a third group of electrically conductive vias extends along a second inner elongated side of the toroid and a fourth group of electrically conductive vias extends along a second outer elongated side of the toroid to connect the metal traces and form one or more coils.

Assignments (2)
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNOR PREVIOUSLY RECORDED ON REEL 054103 FRAME 0753. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNOR NAME AS PALM, PETTERI. Recorded Nov 12, 2020
From: PALM, PETTERI; DAECHE, FRANK; UMAR, ZEESHAN; SAWLE, ANDREW; WOJNOWSKI, MACIEJ; SCHLOEGEL, XAVER; HOEGLAUER, JOSEF
To: INFINEON TECHNOLOGIES AUSTRIA AG
Reel/Frame 054844/0008 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2020
From: P, PETTERI; DAECHE, FRANK; UMAR, ZEESHAN; SAWLE, ANDREW; WOJNOWSKI, MACIEJ; SCHLOEGEL, XAVER; HOEGLAUER, JOSEF
To: INFINEON TECHNOLOGIES AUSTRIA AG
Reel/Frame 054103/0753 →
Continuity (3)
Continuation 16811853 · Mar 6, 2020
Division 15699740 · Sep 8, 2017
Related Publication 20210036610A1 · Feb 4, 2021