Temperature correction in memory sub-systems

1. A system, comprising:

a memory component comprising a plurality of physical addresses;

a processing device operably coupled to the memory component, the processing device configured to perform operations comprising:

receiving a read request describing a logical address;

receiving a read temperature signal from a temperature sensor associated with the memory component;

obtaining a table entry associated with the logical address, wherein the table entry comprises a physical address corresponding to the logical address and write temperature data indicating a write temperature for the logical address;

comparing the write temperature data to the read temperature signal;

selecting a corrected threshold voltage offset based at least in part on the comparing of the write temperature data to the read temperature signal;

applying the corrected threshold voltage offset to a nominal threshold voltage to generate a corrected threshold voltage; and

reading the physical address using the corrected threshold voltage.

2. The system of claim 1 , further comprising:

before receiving the read request, receiving a write request describing the logical address, the write request comprising a data unit;

determining a write temperature code based at least in part on the read temperature signal;

generating the table entry for the logical address, wherein the table entry comprises the write temperature code; and

writing the table entry for the logical address to a table.

3. The system of claim 2 , wherein the determining of the write temperature code comprises classifying the read temperature signal into one of multiple temperature ranges, wherein each temperature range of the multiple temperature ranges corresponds to a temperature code value.

4. The system of claim 1 , wherein the operations further comprise:

before determining the corrected threshold voltage, determining that the write temperature data differs from a nominal temperature data.

5. The system of claim 4 , wherein the determining of the corrected threshold voltage is also based at least in part on the nominal temperature data.

6. The system of claim 1 , wherein the operations further comprise:

determining a read temperature code based at least in part on the read temperature signal, wherein the comparing of the write temperature data to the read temperature signal comprises comparing the write temperature data to the read temperature code.

7. The system of claim 1 , wherein the operations further comprise:

before determining the corrected threshold voltage, reading the physical address using the nominal threshold voltage; and

executing an error recovery routine wherein the reading of the physical address using the corrected threshold voltage is a first remedial action of the error recovery routine.

8. A method comprising:

receiving a read request describing a logical address;

receiving a read temperature signal from a temperature sensor associated with a memory component comprising a plurality of physical addresses;

obtaining a table entry associated with the logical address, wherein the table entry comprises a physical address corresponding to the logical address and write temperature data indicating a write temperature for the logical address;

comparing the write temperature data to the read temperature signal;

electing a corrected threshold voltage offset based at least in part on the comparing of the write temperature data to the read temperature signal;

applying the corrected threshold voltage offset to a nominal threshold voltage to generate a corrected threshold voltage; and

reading the physical address using the corrected threshold voltage.

9. The method of claim 8 , further comprising:

before receiving the read request, receiving a write request describing the logical address, the write request comprising a first data unit;

determining the write temperature data based at least in part on the read temperature signal;

generating the table entry for the logical address, wherein the table entry comprises the write temperature data;

writing the table entry for the logical address to a table; and

accessing the write temperature data from the table.

10. The method of claim 9 , wherein determining the write temperature data comprises classifying the read temperature signal into one of multiple temperature ranges, wherein each temperature range of the multiple temperature ranges corresponds to a temperature code value.

11. The method of claim 8 , further comprising, before determining the corrected threshold voltage, determining that the write temperature data differs from a nominal temperature code.

12. The method of claim 11 , wherein the determining of the corrected threshold voltage is also based at least in part on the nominal temperature code.

13. The method of claim 8 , further comprising determining a read temperature code based at least in part on the read temperature signal, wherein the comparing of the write temperature data to the read temperature signal comprises comparing the write temperature data to the read temperature code.

14. The method of claim 8 , further comprising:

before determining the corrected threshold voltage, reading the physical address using the nominal threshold voltage; and

executing an error recovery routine wherein the reading of the physical address using the corrected threshold voltage is a first remedial action of the error recovery routine.

15. A non-transitory machine-readable storage medium comprising instructions thereon that, when executed by a processing device, cause the processing device to perform operations comprising:

receiving a read request describing a logical address;

receiving a read temperature signal from a temperature sensor associated with a memory component comprising a plurality of physical addresses;

obtaining a table entry associated with the logical address, wherein the table entry comprises a physical address corresponding to the logical address and write temperature data indicating a write temperature for the logical address;

comparing the write temperature data to the read temperature signal;

selecting a corrected threshold voltage offset based at least in part on the comparing of the write temperature data to the read temperature signal;

applying the corrected threshold voltage offset to a nominal threshold voltage to generate a corrected threshold voltage; and

reading the physical address using the corrected threshold voltage.

16. The non-transitory machine-readable storage medium of claim 15 , wherein the operations further comprise:

before receiving the read request, receiving a write request describing the logical address, the write request comprising a first data unit;

determining the write temperature data based at least in part on the read temperature signal;

generating the table entry for the logical address, wherein the table entry comprises the write temperature data;

writing the table entry for the logical address to a table; and

accessing the write temperature data from the table.

17. The non-transitory machine-readable storage medium of claim 16 , wherein determining the write temperature data comprises classifying the read temperature signal into one of multiple temperature ranges, each temperature range of the multiple temperature ranges corresponding to a temperature code value.

18. The non-transitory machine-readable storage medium of claim 15 , wherein the operations further comprise:

before determining the corrected threshold voltage, determining that the write temperature data differs from a nominal temperature code.

19. The non-transitory machine-readable storage medium of claim 16 , wherein the operations further comprise:

determining a read temperature code based at least in part on the read temperature signal.

20. The non-transitory machine-readable storage medium of claim 15 , wherein the operations further comprise:

detecting an error in the reading of the physical address using the nominal threshold voltage by an Error Correction Code (ECC) routine.