Gate-all-around (GAA) transistors with shallow source/drain regions and methods of fabricating the same
Gate-all-around (GAA) transistors with shallow source/drain regions and methods of fabricating the same provide a GAA transistor that includes one or more channels positioned between a source region and a drain region. The one or more channels, which may be nanowire, nanosheet, or nanoslab semiconductors, are surrounded along a longitudinal axis by gate material. At a first end of the channel is a source region and at an opposite end of the channel is a drain region. To reduce parasitic capacitance between a bottom gate and the source and drain regions, a filler material is provided adjacent the bottom gate, and the source and drain regions are grown on top of the filler material. In this fashion, the bottom gate does not abut the source region or the drain region, reducing geometries which would contribute to parasitic capacitance.
1. An integrated circuit (IC) comprising:
a gate-all-around (GAA) transistor comprising:
a first gate section positioned adjacent to a planar first surface, the first gate section having a gate top surface;
one of a source filler and a drain filler comprising a planar top surface, the one of the source filler and the drain filler positioned at one end of the first gate section and extending from the planar first surface to the gate top surface; and
one of a source region and a drain region positioned at one end of a channel, adjacent to the one of the source filler and the drain filler and extending up from a plane defined by the gate top surface.
2. The IC of claim 1 , wherein:
the one of the source filler and the drain filler comprises the source filler; and
the one of the source region and the drain region comprises the source region; and further comprising:
the drain filler comprising a drain planar top surface positioned at another end of the first gate section and extending up from the planar first surface to the gate top surface; and
the drain region positioned at another end of the channel, adjacent to the drain filler and extending up from the plane defined by the gate top surface.
3. The IC of claim 2 , further comprising the channel, wherein the channel comprises a nanostructure.
4. The IC of claim 2 , wherein the source region comprises an epitaxially-grown region.
5. The IC of claim 2 , wherein the source filler is less conductive than the source region.
6. The IC of claim 2 , wherein the source filler comprises an undoped semiconductor material.
7. The IC of claim 6 , wherein the source filler comprises undoped silicon germanium (SiGe).
8. The IC of claim 6 , wherein the source filler and the drain filler each comprise an insulator material.
9. The IC of claim 2 , wherein the source filler comprises a semiconductor material comprising an anti-dopant material.
10. The IC of claim 9 , wherein the anti-dopant material comprises Arsenic Phosphorous.
11. The IC of claim 10 , wherein the anti-dopant material has a concentration greater than 1×10 18 per cubic centimeter (cm 3 ).
12. The IC of claim 2 , further comprising a spacer between the first gate section and the source filler.
13. The IC of claim 2 , wherein the source region comprises a dopant at a first concentration and the source filler comprises the dopant at a second concentration less than the first concentration.
14. The IC of claim 13 , wherein the dopant comprises a phosphorous dopant.
15. The IC of claim 2 , wherein the source region comprises a first material and the source filler comprises a second material different than the first material, the second material inducing stress on the first material to boost mobility in the first material.
16. The IC of claim 1 integrated into a device selected from the group consisting of: a set top box; an entertainment unit; a navigation device; a communications device; a fixed location data unit; a mobile location data unit; a global positioning system (GPS) device; a mobile phone; a cellular phone; a smart phone; a session initiation protocol (SIP) phone; a tablet; a phablet; a server; a computer; a portable computer; a mobile computing device; a wearable computing device; a desktop computer; a personal digital assistant (PDA); a monitor; a computer monitor; a television; a tuner; a radio; a satellite radio; a music player; a digital music player; a portable music player; a digital video player; a video player; a digital video disc (DVD) player; a portable digital video player; an automobile; a vehicle component; avionics systems; a drone; and a multicopter.
17. A method for fabricating a gate-all-around (GAA) transistor, the method comprising:
forming a first gate having a gate top surface on a planar top surface of a substrate;
forming a channel on the gate top surface of the first gate;
forming a source filler adjacent to the first gate from the planar top surface of the substrate to at least the gate top surface of the first gate, wherein the source filler has a planar top surface;
forming a drain filler adjacent to the first gate from the planar top surface of the substrate to at least the gate top surface of the first gate;
forming a source region on the planar top surface of the source filler; and
forming a drain region on the drain filler.
18. The method of claim 17 , further comprising forming a spacer between the first gate and the source filler.
19. The method of claim 17 , wherein forming the channel comprises forming a nanostructure on the gate top surface of the first gate.
20. The method of claim 19 , wherein forming the nanostructure comprises forming one of a nanowire, a nanosheet, or a nanoslab.
21. The method of claim 17 , further comprising forming a plurality of gate sections over the channel.
22. The method of claim 17 , further comprising etching the channel and exposing the planar top surface of the substrate.
23. The method of claim 17 , wherein forming the source filler comprises epitaxially growing an undoped semiconductor material.
24. The method of claim 23 , wherein epitaxially growing the undoped semiconductor material comprises epitaxially growing an undoped silicon germanium (SiGe) semiconductor material.
25. The method of claim 17 , wherein forming the source filler comprises epitaxially growing a semiconductor material comprising an anti-dopant material.
26. The method of claim 17 , wherein forming the source region comprises epitaxially growing the source region.
27. The method of claim 26 , wherein epitaxially growing the source region comprises growing a doped source region.
28. The method of claim 27 , wherein forming the source filler comprises growing the source filler at a first doping level below a second doping level of the doped source region.
29. An integrated circuit (IC) comprising:
a substrate having a planar top surface; and
a gate-all-around (GAA) transistor positioned on top of the substrate, the GAA transistor comprising:
a bottom gate positioned above the planar top surface and parallel to the planar top surface, the bottom gate having a gate top surface;
a channel positioned above the gate top surface and parallel to the planar top surface;
a source filler positioned at one end of the bottom gate and extending up from the planar top surface to the gate top surface;
a source region positioned at one end of the channel, on top of the source filler and extending up from a plane defined by the gate top surface;
a drain filler positioned at another end of the bottom gate and extending up from the planar top surface to the gate top surface; and
a drain region positioned at another end of the channel, on top of the drain filler and extending up from the plane defined by the gate top surface.