Semiconductor device and method for manufacturing semiconductor device
A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.
1. A semiconductor device comprising:
a first insulator;
a second insulator;
a third insulator between the first insulator and the second insulator; and
a transistor comprising a gate electrode,
wherein the transistor comprises an oxide in a channel formation region,
wherein the oxide is surrounded by the first insulator,
wherein the first insulator is surrounded by the second insulator,
wherein a hydrogen concentration in the first insulator is lower than a hydrogen concentration in the second insulator, and
wherein the third insulator is in contact with a top surface of the gate electrode.
2. The semiconductor device according to claim 1 ,
wherein the hydrogen concentration in the first insulator is lower than 1.0×10 20 atoms/cm 3 , and
wherein the hydrogen concentration in the second insulator is lower than 5.0×10 20 atoms/cm 3 .
3. The semiconductor device according to claim 1 ,
wherein a nitrogen concentration in the first insulator is lower than a nitrogen concentration in the second insulator.
4. The semiconductor device according to claim 1 ,
wherein the amount of oxygen that is released from the first insulator by heating and is converted into oxygen molecules is greater than or equal to 2.0×10 14 molecules/cm 2 .
5. The semiconductor device according to claim 1 ,
wherein the first insulator comprises oxygen and silicon, and
wherein the second insulator comprises nitrogen and silicon.
6. The semiconductor device according to claim 1 ,
wherein the oxide comprises indium, an element M (M is aluminum, gallium, yttrium, or tin), and zinc.
7. The semiconductor device according to claim 1 ,
wherein the gate electrode is not covered with the first insulator in a channel width direction.
8. A semiconductor device comprising a first insulator to a fourth insulator and a transistor,
wherein the first insulator and the transistor are over the second insulator,
wherein the transistor comprises:
a fifth insulator;
a sixth insulator over the fifth insulator;
a first oxide over the sixth insulator;
a second oxide over the first oxide;
a first conductor and a second conductor over the second oxide;
a seventh insulator over the second oxide; and
a third conductor over the seventh insulator, the third conductor overlapping with the second oxide,
wherein the third insulator is over the first insulator, the first conductor, and the second conductor,
wherein the fourth insulator is in contact with top surfaces of the third insulator, the seventh insulator, and the third conductor,
wherein a hydrogen concentration in the third insulator is lower than 1.0×10 20 atoms/cm 3 , and
wherein the third insulator comprises oxygen and silicon.
9. The semiconductor device according to claim 8 ,
wherein a composition of the first insulator is substantially the same as a composition of the third insulator, and
wherein a composition of the second insulator is substantially the same as a composition of the fourth insulator.
10. The semiconductor device according to claim 8 ,
wherein the fourth insulator comprises oxygen and aluminum.
11. The semiconductor device according to claim 8 ,
wherein the fourth insulator comprises nitrogen and silicon.
12. The semiconductor device according to claim 8 ,
wherein the fourth insulator has a stacked-layer structure,
wherein a first layer of the fourth insulator that is in contact with a top surface of the third insulator comprises oxygen and aluminum, and
wherein a second layer over the first layer comprises nitrogen and silicon.
13. The semiconductor device according to claim 8 ,
wherein the second insulator comprises nitrogen and silicon.
14. The semiconductor device according to claim 8 ,
wherein the second oxide comprises indium, an element M (M is aluminum, gallium, yttrium, or tin), and zinc.
15. The semiconductor device according to claim 8 ,
wherein a composition of the sixth insulator is substantially the same as a composition of the third insulator.
16. The semiconductor device according to claim 8 ,
wherein the amount of oxygen that is released from the third insulator by heating and is converted into oxygen molecules is greater than or equal to 2.0×10 14 molecules/cm 2 .
17. The semiconductor device according to claim 8 , further comprising a third oxide over the second oxide,
wherein the fourth insulator is in contact with a top surface of the third oxide.