Coating of nano-scaled cavities
Methods, systems, and apparatus for coating the internal surface of nano-scale cavities on a substrate are contemplated. A first fluid of high wettability is applied to the nano-scale cavity, filling the cavity. A second fluid carrying a conductor or a catalyst is applied over the opening of the nano-scale cavity. The second fluid has a lower vapor pressure than the first fluid. The first fluid is converted to a gas, for example by heating the substrate. The gas exits the nano-scale cavity, creating a negative pressure or vacuum in the nano-scale cavity. The negative pressure draws the second fluid into the nano-scale cavity. The conductor is deposited on the interior surface of the nano-scale cavity, preferably less than 10 nm thick.
1. A method of depositing a material on an interior surface of a cavity in a substrate, the method comprising:
filling the cavity at least partially with a first fluid;
covering the cavity having the first fluid with a second fluid comprising a material source, wherein the first fluid has a higher vapor pressure than the second fluid;
vaporizing the first fluid into a gas, and permitting the gas to exit the cavity, thus creating a negative pressure in the cavity;
drawing the second fluid into the cavity by way of the negative pressure; and
depositing the material from the material source onto the interior surface of the cavity.
2. The method of claim 1 , wherein the first fluid is a pure fluid or a combination of fluids.
3. The method of claim 1 , wherein the first fluid further comprises a non-fluid substance.
4. The method of claim 1 , wherein the cavity has an opening with a diameter no more than 10 μm.
5. The method of claim 1 , wherein the cavity is less than 10 mm deep.
6. The method of claim 1 , wherein the cavity is at least one of a trench, a through hole, a blind via, or a buried via.
7. The method of claim 1 , wherein the substrate comprises at least one of a polymer, a metal, a ceramic, a crystal, a glass, a dielectric, and a composite material.
8. The method of claim 1 , further comprising the step of forming the cavity in the substrate.
9. The method of claim 1 , wherein the first fluid comprises a cryogenic liquid.
10. The method of claim 9 , wherein the cryogenic liquid is at least one of the group consisting of argon, helium, hydrogen, nitrogen, oxygen, fluorine, chlorine, neon, argon, krypton, xenon, radon, or derivatives or combinations thereof.
11. The method of claim 1 , wherein the first fluid comprises an organic solvent.
12. The method of claim 1 , wherein the first fluid has wettability.
13. The method of claim 1 , wherein the first fluid has a contact angle with the substrate of less than 90 degrees.
14. The method claim 1 , wherein the first fluid has a surface tension no more than 30 mN/m at standard temperature and pressure (STP).
15. The method of claim 1 , wherein the first fluid has a vapor pressure that is higher than water vapor pressure at standard temperature and pressure STP.
16. The method of claim 1 , wherein the material source comprises a carboxylate and a metal.
17. The method of claim 1 , wherein the second fluid comprises an organic solvent.
18. The method of claim 17 , wherein the second fluid is the same as the first fluid.
19. The method of claim 1 , wherein the material is a metal.
20. The method of claim 1 , wherein the material is deposited on the interior surface of the cavity no more than 100 nm thick.
21. The method of claim 1 , the material comprises at least one of a conductor, a semiconductor, a catalyst, or a combination thereof.